公开(公告)号：US6166951A

公开(公告)日：2000-12-26

申请号：US370010

申请日：1999-08-06

Applicant: Narbeh Derhacobian ,  Hao Fang ,  Michael Han

Inventor： Narbeh Derhacobian ,  Hao Fang ,  Michael Han

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/26

CPC classification number: G11C16/0483 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5642

Abstract: A method and circuit for sensing multi states of a NAND memory cell by applying reverse bias voltage at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the applied reverse P well bias, and sensing the memory cell state.

Abstract translation: 一种用于通过以恒定栅极电压（优选为零伏特）施加反向偏置电压来感测NAND存储器单元的多种状态的方法和电路，响应于所施加的反向P阱偏置而产生存储单元电流，以及感测存储单元状态。

公开(公告)号：US06188606B1

公开(公告)日：2001-02-13

申请号：US09369600

申请日：1999-08-06

Applicant: Narbeh Derhacobian ,  Hao Fang ,  Michael Han

Inventor： Narbeh Derhacobian ,  Hao Fang ,  Michael Han

IPC: G11C1604

CPC classification number: G11C16/0483 ,  G11C11/5621 ,  G11C11/5642

Abstract: A method and circuit for sensing multi states of a NAND memory cell by varying source bias, at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the source bias, and sensing the memory cell state.

Abstract translation: 一种用于通过在恒定栅极电压（优选为零伏特）下改变源偏置来感测NAND存储器单元的多状态的方法和电路，响应于源极偏置产生存储单元电流，并感测存储单元状态。

公开(公告)号：US06529410B1

公开(公告)日：2003-03-04

申请号：US09665916

申请日：2000-09-20

Applicant: Michael Han ,  Narbeh Derhacobian

Inventor： Michael Han ,  Narbeh Derhacobian

IPC: G11C1604

CPC classification number: G11C16/0483 ,  H01L27/115

Abstract: An efficient NAND array structure includes memory cells coupled in series between a bit-line and a select source transistor, without a select drain transistor. The memory cells each include a floating gate transistor, having a control gate connected to a word-line, which selects the memory cell during its programming. In one embodiment, the NAND array structure includes a buried layer at a junction between the substrate and a well in which the memory cells are formed. Programming is achieved using hot electron injection. In one embodiment, multiple memory cells are programmed simultaneously.

Abstract translation: 有效的NAND阵列结构包括串联耦合在位线和选择源晶体管之间的存储单元，而没有选择漏极晶体管。 每个存储单元都包括一个具有连接到字线的控制栅极的浮栅晶体管，其在编程期间选择该存储单元。 在一个实施例中，NAND阵列结构包括在衬底与其中形成存储器单元的阱之间的接合处的掩埋层。 使用热电子注入实现编程。 在一个实施例中，多个存储器单元被同时编程。

公开(公告)号：US20180219936A1

公开(公告)日：2018-08-02

申请号：US15940379

申请日：2018-03-29

Applicant: Alexei R. White ,  Mitchell Cohen ,  Michael Han ,  Ho Yan Leung

Inventor： Alexei R. White ,  Mitchell Cohen ,  Michael Han ,  Ho Yan Leung

IPC: H04L29/08

CPC classification number: H04L67/04 ,  H04L67/22 ,  H04M1/72522 ,  H04M2250/10 ,  H04M2250/12

Abstract: Systems and methods for capturing interaction data relating to a host application (app) implemented on a mobile device are disclosed. A tracking module is embedded in the host application. Interaction data relating to the host application is captured on the mobile device with the tracking module. The captured interaction data is transmitted from the mobile device.

公开(公告)号：US20190220886A1

公开(公告)日：2019-07-18

申请号：US15870042

申请日：2018-01-12

Applicant: Minh-Michael Van Le ,  Michael Han

Inventor： Minh-Michael Van Le ,  Michael Han

IPC: G06Q30/02

CPC classification number: G06Q30/0239 ,  G06Q20/0658 ,  G06Q30/0277 ,  H04L63/06

Abstract: A computerized process can be used to create and distribute a durable coupon token redeemable with a company agreeing to permit a user redeem the durable coupon token for a discount. The process includes, within a computerized processor, operating programming configured to create the durable coupon token. The durable coupon token includes a digital security key associated with the durable coupon token configured to provide transferrable ownership of the durable coupon token. The process further includes distributing the durable coupon token to a consumer. The durable coupon token is configured to enable the consumer to claim the discount with the company.

公开(公告)号：US07676175B2

公开(公告)日：2010-03-09

申请号：US11520941

申请日：2006-09-13

Applicant: Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

Inventor： Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

IPC: G03G15/00

CPC classification number: F16D1/10 ,  G03G15/751

Abstract: A photosensitive drum for a printer cartridge, which can be easily mounted on a printer cartridge of which the positions of drum connectors are fixed, is disclosed. The photosensitive drum for a printer cartridge comprises a cylindrical drum having a photosensitive layer on a cylindrical surface thereof; and a pair of rotation shafts which is respectively mounted on the sides of the cylindrical drum for rotating and supporting the cylindrical drum, wherein at least one of the rotation shafts is insert-fitted to the side of the cylindrical drum.

Abstract translation: 公开了一种用于打印机墨盒的感光鼓，其可以容易地安装在其中鼓式连接器的位置被固定的打印机墨盒上。 用于打印机墨盒的感光鼓包括在其圆柱形表面上具有感光层的圆柱形滚筒; 以及一对旋转轴，其分别安装在圆筒形滚筒的侧面上，用于旋转和支撑圆柱形滚筒，其中至少一个旋转轴嵌入到圆筒形滚筒的侧面。

公开(公告)号：US20070237545A1

公开(公告)日：2007-10-11

申请号：US11520941

申请日：2006-09-13

Applicant: Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

Inventor： Myung-Lae Cho ,  Michael Han ,  Han-Shik Kim ,  Seong-Jin Cho ,  Jun-Ho Jeon

IPC: G03G15/00

CPC classification number: F16D1/10 ,  G03G15/751

Abstract: A photosensitive drum for a printer cartridge, which can be easily mounted on a printer cartridge of which the positions of drum connectors are fixed, is disclosed. The photosensitive drum for a printer cartridge comprises a cylindrical drum having a photosensitive layer on a cylindrical surface thereof; and a pair of rotation shafts which is respectively mounted on the sides of the cylindrical drum for rotating and supporting the cylindrical drum, wherein at least one of the rotation shafts is insert-fitted to the side of the cylindrical drum.

Abstract translation: 公开了一种用于打印机墨盒的感光鼓，其可以容易地安装在其中鼓式连接器的位置被固定的打印机墨盒上。 用于打印机墨盒的感光鼓包括在其圆柱形表面上具有感光层的圆柱形滚筒; 以及一对旋转轴，其分别安装在圆筒形滚筒的侧面上，用于旋转和支撑圆柱形滚筒，其中至少一个旋转轴嵌入到圆筒形滚筒的侧面。

公开(公告)号：US06344994B1

公开(公告)日：2002-02-05

申请号：US09795849

申请日：2001-02-28

Applicant: Darlene G. Hamilton ,  Yider Wu ,  Michael Han

Inventor： Darlene G. Hamilton ,  Yider Wu ,  Michael Han

IPC: G11C1604

CPC classification number: G11C16/3409 ,  G11C5/063 ,  G11C11/5671 ,  G11C16/0475 ,  G11C16/10 ,  G11C16/3404 ,  G11C16/3436 ,  G11C16/3445 ,  G11C16/3454

Abstract: Dummy wordlines are provided between gaps of blocks of memory cells to compensate for higher charge loss at higher stress temperatures exhibited at edge wordlines of blocks of memory cells having large gaps. The dummy wordlines minimize the gap between the blocks. The dummy wordlines can be positioned between the blocks. Alternatively, the wordline width for the last block or sector wordline can be changed or different nitride used with less conductance in high temperatures. The dummy wordlines are typically ignored in normal operations on the memory.

Abstract translation: 在存储单元块的间隙之间提供虚拟字线以补偿在具有大间隙的存储器单元的块的边缘字线处表现的较高应力温度下的较高电荷损失。 虚拟字线最小化块之间的差距。 虚拟字线可以位于块之间。 或者，可以改变最后一个块或扇区字线的字线宽度，或者在高温下以较小的电导率使用不同的氮化物。 通常在内存的正常操作中忽略伪字线。