Formulation for removal of photoresist, etch residue and BARC
    2.
    发明授权
    Formulation for removal of photoresist, etch residue and BARC 有权
    去除光致抗蚀剂,蚀刻残渣和BARC的配方

    公开(公告)号:US07674755B2

    公开(公告)日:2010-03-09

    申请号:US11602662

    申请日:2006-11-21

    IPC分类号: C11D7/50

    CPC分类号: C11D7/06 C11D7/34 C11D11/0047

    摘要: A formulation for removing photoresist, ion implanted photoresist, etch residue or BARC comprises: an ammonium hydroxide and a 2-aminobenzothiazole, remainder water. Preferably the formulation comprises: tetramethyl ammonium hydroxide, tolyltriazole, propylene glycol, 2-aminobenzothiazole, dipropylene glycol monomethyl ether, remainder water; more preferably: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water. The invention is also a method of removing materials selected from the group consisting of photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation, described above, to the substrate to remove the material from the substrate.

    摘要翻译: 用于除去光致抗蚀剂,离子注入光致抗蚀剂,蚀刻残渣或BARC的制剂包括:氢氧化铵和2-氨基苯并噻唑,其余为水。 优选地,制剂包括:四甲基氢氧化铵,甲苯基三唑,丙二醇,2-氨基苯并噻唑,二丙二醇单甲醚,剩余水; 更优选:1-15重量%的四甲基氢氧化铵,1-5重量%的甲苯基三唑,5-15重量%的丙二醇,1-10重量%的2-氨基苯并噻唑; 二丙二醇单甲醚20-45重量%,剩余水。 本发明还是一种从基材中除去选自光致抗蚀剂,蚀刻残余物,BARC及其组合的材料的方法,包括:将上述制剂施用于基材以从基材中除去材料。

    Formulation for removal of photoresist, etch residue and BARC
    3.
    发明申请
    Formulation for removal of photoresist, etch residue and BARC 有权
    去除光致抗蚀剂,蚀刻残渣和BARC的配方

    公开(公告)号:US20070149430A1

    公开(公告)日:2007-06-28

    申请号:US11602662

    申请日:2006-11-21

    IPC分类号: C11D7/32

    CPC分类号: C11D7/06 C11D7/34 C11D11/0047

    摘要: A formulation for removing photoresist, ion implanted photoresist, etch residue or BARC comprises: an ammonium hydroxide and a 2-aminobenzothiazole, remainder water. Preferably the formulation comprises: tetramethyl ammonium hydroxide, tolyltriazole, propylene glycol, 2-aminobenzothiazole, dipropylene glycol monomethyl ether, remainder water; more preferably: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water. The invention is also a method of removing materials selected from the group consisting of photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation, described above, to the substrate to remove the material from the substrate.

    摘要翻译: 用于除去光致抗蚀剂,离子注入光致抗蚀剂,蚀刻残渣或BARC的制剂包括:氢氧化铵和2-氨基苯并噻唑,其余为水。 优选地,制剂包括:四甲基氢氧化铵,甲苯基三唑,丙二醇,2-氨基苯并噻唑,二丙二醇单甲醚,剩余水; 更优选:1-15重量%的四甲基氢氧化铵,1-5重量%的甲苯基三唑,5-15重量%的丙二醇,1-10重量%的2-氨基苯并噻唑; 二丙二醇单甲醚20-45重量%,剩余水。 本发明还是一种从基材中除去选自光致抗蚀剂,蚀刻残余物,BARC及其组合的材料的方法,包括:将上述制剂施用于基材以从基材中除去材料。

    Stripper For Dry Film Removal
    8.
    发明申请
    Stripper For Dry Film Removal 有权
    剥离剂去除干膜

    公开(公告)号:US20090227483A1

    公开(公告)日:2009-09-10

    申请号:US12394183

    申请日:2009-02-27

    IPC分类号: G03F7/42

    CPC分类号: G03F7/425 C23G1/20 G03F7/426

    摘要: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.

    摘要翻译: 在优选实施方案中,本发明是光致抗蚀剂剥离剂制剂,其包含:羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱,单乙醇胺,四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚,没食子酸,乳酸,苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油,丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。

    Stripper for dry film removal
    9.
    发明授权
    Stripper for dry film removal 有权
    剥皮机用于干膜去除

    公开(公告)号:US08357646B2

    公开(公告)日:2013-01-22

    申请号:US12394183

    申请日:2009-02-27

    IPC分类号: B08B3/00

    CPC分类号: G03F7/425 C23G1/20 G03F7/426

    摘要: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.

    摘要翻译: 在优选实施方案中,本发明是光致抗蚀剂剥离剂制剂,其包含:羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱,单乙醇胺,四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚,没食子酸,乳酸,苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油,丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。