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公开(公告)号：US20090229629A1
公开(公告)日：2009-09-17
申请号：US12400332
申请日：2009-03-09
申请人： Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
发明人： Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
CPC分类号： G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/31133
摘要： The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.
摘要翻译： 本发明是用于去除光致抗蚀剂的化学汽提器配方以及电子器件衬底的蚀刻和灰化残留物，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。 本发明也是通过使基材与制剂接触来除去光致抗蚀剂和蚀刻和灰化残留物的方法，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。
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公开(公告)号：US20090227483A1
公开(公告)日：2009-09-10
申请号：US12394183
申请日：2009-02-27
申请人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
发明人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
IPC分类号： G03F7/42
摘要： The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.
摘要翻译： 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。
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公开(公告)号：US08357646B2
公开(公告)日：2013-01-22
申请号：US12394183
申请日：2009-02-27
申请人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
发明人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
IPC分类号： B08B3/00
摘要： The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.
摘要翻译： 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。
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公开(公告)号：US20110212866A1
公开(公告)日：2011-09-01
申请号：US12859624
申请日：2010-08-19
申请人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
发明人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
CPC分类号： G03F7/426 , C11D3/0073 , C11D7/06 , C11D7/261 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C11D11/0047 , C23G1/22 , G03F7/425
摘要： The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.
摘要翻译： 本发明涉及富含水的配方及其使用方法，以去除体积光致抗蚀剂，后蚀刻和后残留物，来自Al后端的互连结构的残留物以及污染物。 制剂包含：羟胺; 含有烷基二羟基苯和羟基喹啉的混合物的腐蚀抑制剂; 链烷醇胺，水溶性溶剂或两者的组合; 和至少50重量％的水。
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公开(公告)号：US08518865B2
公开(公告)日：2013-08-27
申请号：US12859624
申请日：2010-08-19
申请人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
发明人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
CPC分类号： G03F7/426 , C11D3/0073 , C11D7/06 , C11D7/261 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C11D11/0047 , C23G1/22 , G03F7/425
摘要： The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.
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公开(公告)号：US20110136717A1
公开(公告)日：2011-06-09
申请号：US12797903
申请日：2010-06-10
申请人： Dnyanesh Chandrakant Tamboli , Madhukar Bhaskara Rao , Gautam Banerjee , Keith Randolph Fabregas
发明人： Dnyanesh Chandrakant Tamboli , Madhukar Bhaskara Rao , Gautam Banerjee , Keith Randolph Fabregas
CPC分类号： C11D11/0047 , C11D3/30 , C11D3/378 , C11D7/3209 , G03F7/423 , G03F7/425 , G03F7/426 , H05K3/26
摘要： The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant.The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.
摘要翻译： 本发明是清洁半导体制造加工中的残留物的方法，包括使待清洗的表面与具有选自丙烯酰胺基 - 甲基 - 丙烷磺酸盐的聚合物的聚合物，丙烯酸-2- 丙烯酰胺基-2-甲基丙磺酸共聚物及其混合物，以及具有大于4个碳原子的氢氧化季铵或氢氧化胆碱与非乙酰基表面活性剂。 本发明也是具有上述方法的组分的后CMP清洗制剂。
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7.发明授权
公开(公告)号：US5753010A
公开(公告)日：1998-05-19
申请号：US736846
申请日：1996-10-28
IPC分类号： B01D53/047 , B01D53/22
CPC分类号： B01D53/047 , B01D2256/16 , B01D2257/50 , B01D2257/7022 , B01D2259/4006 , B01D53/0446
摘要： A method for increasing product recovery or reducing the size of steam methane reformer and pressure swing adsorption systems utilized for hydrogen production. A significant portion of the hydrogen in the PSA depressurization and purge effluent gas, which is otherwise burned as fuel in the reformer, is recovered and recycled to the PSA system to provide additional high purity hydrogen product. This is accomplished by processing selected portions of the depressurization and purge effluent gas in adsorbent membrane separators to increase hydrogen content for recycle to the PSA system. Remaining portions of the depressurization and purge effluent gas which contain lower concentrations of hydrogen are utilized for fuel value in the reformer.
摘要翻译： 一种用于提高产品回收率或减小用于氢气生产的蒸汽甲烷重整器和变压吸附系统的尺寸的方法。 回收再循环到PSA系统中的PSA减压和吹扫废气中的大部分氢，否则这些氢气作为燃料被燃烧，以提供额外的高纯度氢产物。 这是通过在吸附膜分离器中处理选定部分的减压和吹扫流出气体来实现的，以增加用于再循环到PSA系统中的氢含量。 含有较低浓度氢的减压和吹扫废气的剩余部分用于重整器中的燃料价值。
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公开(公告)号：US20130130508A1
公开(公告)日：2013-05-23
申请号：US13475632
申请日：2012-05-18
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L31/02363 , Y02E10/50
摘要： Texturing composition for texturing silicon wafers having one or more surfactants. Methods of texturing silicon wafers having the step of wetting said wafer with a texturing composition having one or more surfactants.
摘要翻译： 用于织造具有一种或多种表面活性剂的硅片的纹理组合物。 具有使具有一种或多种表面活性剂的变形组合物润湿所述晶片的步骤的硅晶片的纹理化方法。
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公开(公告)号：US20050120581A1
公开(公告)日：2005-06-09
申请号：US10730505
申请日：2003-12-08
申请人： Robert Ling Chiang , Roger Dean Whitley , Dingjun Wu , Chun Christine Dong , Madhukar Bhaskara Rao
发明人： Robert Ling Chiang , Roger Dean Whitley , Dingjun Wu , Chun Christine Dong , Madhukar Bhaskara Rao
IPC分类号： B01J19/00 , B01D53/28 , B01J8/00 , B01J19/02 , B01J20/04 , B01J20/32 , C01B21/04 , C01B23/00 , C01C1/02 , F26B3/00
CPC分类号： B01D53/28 , B01J20/041 , B01J20/08 , B01J20/28057 , B01J20/3078 , B01J20/3204 , B01J20/3236 , B01J2220/42 , B01J2220/56 , C01B21/0455 , C01B23/0057 , C01B2210/0042 , C01B2210/0062 , C01C1/024
摘要： This invention relates to an improvement in a process for removing water from a hydride gas, and particularly ammonia, by contacting the hydride gas with a drying agent under conditions for effecting removal of the water. The improvement for significantly reducing the water content to trace levels in said hydride gas resides in the use of at least Group 1 metal oxide and at least one Group 2 metal oxide as a drying agent.
摘要翻译： 本发明涉及通过在有效去除水分的条件下使氢化物气体与干燥剂接触而从氢化物气体，特别是氨中除去水的方法。 在所述氢化物气体中显着降低水含量至痕量水平的改进在于使用至少第1族金属氧化物和至少一种第2族金属氧化物作为干燥剂。
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公开(公告)号：US08883701B2
公开(公告)日：2014-11-11
申请号：US13171252
申请日：2011-06-28
申请人： Dnyanesh Chandrakant Tamboli , Rajkumar Ramamurthi , David Barry Rennie , Madhukar Bhaskara Rao , Gautam Banerjee , Gene Everad Parris
发明人： Dnyanesh Chandrakant Tamboli , Rajkumar Ramamurthi , David Barry Rennie , Madhukar Bhaskara Rao , Gautam Banerjee , Gene Everad Parris
IPC分类号： C11D1/00 , C11D3/04 , C11D3/20 , C11D3/33 , C11D11/00 , B28D5/00 , H01L21/67 , C11D3/30 , H01L21/78
CPC分类号： C11D3/2082 , B28D5/0076 , C11D1/14 , C11D3/044 , C11D3/2075 , C11D3/30 , C11D3/33 , C11D11/0047 , H01L21/02076 , H01L21/67075 , H01L21/78 , H01L2224/0381 , H01L2224/04042 , H01L2224/05624 , H01L2224/05647 , H01L2224/94 , H01L2224/03
摘要： A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.
摘要翻译： 公开了半导体晶圆切片的解决方案。 在通过锯切切割晶片的过程中，溶液抑制污染物残留物或颗粒的粘附，并且减少或消除暴露的金属化区域的腐蚀。 该溶液包含至少一种有机酸和/或其盐; 至少一种表面活性剂和/或至少一种碱; 和去离子水，该组合物的pH等于或大于4.该溶液还可以包含螯合剂，消泡剂或分散剂。
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