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1.发明授权
公开(公告)号：US5516886A
公开(公告)日：1996-05-14
申请号：US258898
申请日：1994-06-10
Applicant: M. Dalil Rahman , Dana L. Durham
Inventor： M. Dalil Rahman , Dana L. Durham
CPC classification number: G03F7/091
Abstract: The present invention provides methods for producing top anti-reflective coating compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such top anti-reflective coating compositions.
Abstract translation: 本发明提供了利用特殊处理的离子交换树脂生产具有非常低水平金属离子的顶部抗反射涂料组合物的方法。 还提供了一种用于制造使用这种顶部抗反射涂层组合物的半导体器件的方法。
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2.发明授权Polyphosphazene binder resins for photoresists comprising as photosensitizers o-quinone diazide esters 失效多晶磷酸酯树脂，用于光合作用的光催化剂O-QUINONE DIAZIDE ESTERS
公开(公告)号：US5248585A
公开(公告)日：1993-09-28
申请号：US810634
申请日：1991-12-18
Applicant: Thomas J. Lynch , Dana L. Durham , Chester Sobodacha
Inventor： Thomas J. Lynch , Dana L. Durham , Chester Sobodacha
CPC classification number: C08G79/025 , G03F7/0233 , Y10S430/106
Abstract: This invention relates to novel radiation sensitive compositions. More particularly the invention relates to photoresists containing phosphorus and nitrogen linked polymers; i.e., polyphosphazenes, useful in the preparation of a relief pattern on a substrate; e.g., a silicon wafer or aluminum plate. The polyphosphazenes of in this invention can be synthesized by the condensation of N-trimethylsilylalkoxyphosphorimides. Radiation sensitive positive photoresist compositions of the invention can be developed in aqueous base developer or organic solvent developer The base developer dissolution properties of the composition can be controlled by incorporating carboxylate groups into the polyphosphazene. The polyphosphazenes utilized in this invention have good solubility properties in various organic solvents and also have good mechanical, electrical, adhesion and thermal properties.
Abstract translation: 本发明涉及新型的辐射敏感组合物。 更具体地说，本发明涉及含有磷和氮的聚合物的光刻胶; 即聚磷腈，可用于在底物上制备浮雕图案; 例如硅晶片或铝板。 本发明中的聚磷腈可以通过N-三甲基甲硅烷氧基氧磷酰亚胺的缩合来合成。 本发明的辐射敏感正性光致抗蚀剂组合物可以在含水基础显影剂或有机溶剂显影剂中显影。组合物的基底显影剂溶解性能可以通过将羧酸酯基团掺入到聚磷腈中来控制。 本发明中使用的聚磷腈在各种有机溶剂中具有良好的溶解性，并且还具有良好的机械，电学，粘合性和热性能。
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3.发明授权公开(公告)号：US07687447B2
公开(公告)日：2010-03-30
申请号：US12047655
申请日：2008-03-13
Applicant: Matthew I. Egbe , Michael Walter Legenza , Dana L. Durham
Inventor： Matthew I. Egbe , Michael Walter Legenza , Dana L. Durham
IPC: C11D7/50
CPC classification number: C11D7/5022 , C11D7/263 , C11D7/34 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02057
Abstract: The present invention relates to semi-aqueous compositions and the method using same, to remove highly cross-linked resists and etch-residues. The compositions are comprised of aminobenzenesulfonic acid, water miscible organic solvent and water.
Abstract translation: 本发明涉及半水性组合物及其使用方法，以去除高度交联的抗蚀剂和蚀刻残留物。 组合物由氨基苯磺酸，水混溶性有机溶剂和水组成。
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4.发明申请Semi-Aqueous Stripping and Cleaning Composition Containing Aminobenzenesulfonic Acid 有权含有氨基苯磺酸的半水性剥离和清洗组合物公开(公告)号：US20090233827A1
公开(公告)日：2009-09-17
申请号：US12047655
申请日：2008-03-13
Applicant: Matthew I. Egbe , Michael Walter Legenza , Dana L. Durham
Inventor： Matthew I. Egbe , Michael Walter Legenza , Dana L. Durham
IPC: C09K13/00
CPC classification number: C11D7/5022 , C11D7/263 , C11D7/34 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02057
Abstract: The present invention relates to semi-aqueous compositions and the method using same, to remove highly cross-linked resists and etch-residues. The compositions are comprised of aminobenzenesulfonic acid, water miscible organic solvent and water.
Abstract translation: 本发明涉及半水性组合物及其使用方法，以去除高度交联的抗蚀剂和蚀刻残留物。 组合物由氨基苯磺酸，水混溶性有机溶剂和水组成。
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公开(公告)号：US06821352B2
公开(公告)日：2004-11-23
申请号：US10723737
申请日：2003-11-26
Applicant: Roberto John Rovito , David Barry Rennie , Dana L. Durham
Inventor： Roberto John Rovito , David Barry Rennie , Dana L. Durham
IPC: C23G102
CPC classification number: H01L21/02063 , C09K13/00 , H01L21/02071
Abstract: A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dicarboxylic acid, a buffering agent, a fluorine source, and optionally a water miscible organic solvent.
Abstract translation: 本文公开了一种用于除去蚀刻残余物的组合物及其使用方法。 在一个方面，提供一种从基材上去除蚀刻残留物的方法，包括：使基材与包含水，有机二羧酸，缓冲剂，氟源和任选的水混溶性有机溶剂的组合物接触。
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Patent Agency Ranking
公开(公告)号：US06187506B1
公开(公告)日：2001-02-13
申请号：US09368740
申请日：1999-08-05
Applicant: Shuji Ding , Dinesh N. Khanna , Mark A. Spak , Dana L. Durham , Jianhui Shan , Eleazer Gonzalez
Inventor： Shuji Ding , Dinesh N. Khanna , Mark A. Spak , Dana L. Durham , Jianhui Shan , Eleazer Gonzalez
IPC: G03C500
CPC classification number: G03F7/091
Abstract: The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or mixture of solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and does not contain a crosslinking group.
Abstract translation: 本发明涉及一种新颖的抗反射涂层溶液及其在光刻中的应用。 抗反射涂层溶液包含新型聚合物和有机溶剂或溶剂混合物，其中新型聚合物包含含有吸收约180nm至约450nm并且不含交联基团的染料的单元。
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7.发明授权Antireflective coating compositions for photoresist compositions and use thereof 失效用于光致抗蚀剂组合物的抗反射涂料组合物及其用途
公开(公告)号：US5994430A
公开(公告)日：1999-11-30
申请号：US841750
申请日：1997-04-30
Applicant: Shuji Ding , Ping-Hung Lu , Dinesh N. Khanna , Jianhui Shan , Dana L. Durham , Ralph R. Dammel , M. Dalil Rahman
Inventor： Shuji Ding , Ping-Hung Lu , Dinesh N. Khanna , Jianhui Shan , Dana L. Durham , Ralph R. Dammel , M. Dalil Rahman
IPC: G03F7/11 , C08F8/30 , C08F212/14 , C08L25/18 , C09B69/10 , G03F7/09 , H01L21/027 , C08K5/00
CPC classification number: C09B69/106 , G03F7/091
Abstract: The present invention relates to an antireflective coating composition comprising a novel polymer in a solvent composition. The invention further comprises processes for using the antireflective coating composition in photolithography. The antireflective coating composition comprises a novel polymer and a solvent composition, where the novel polymer of the antireflective coating comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The solvent may be organic, preferrably, a solvent of low toxicity, or it may be water, which may additionally contain other water miscible organic solvents.
Abstract translation: 本发明涉及一种抗反射涂料组合物，其包含溶剂组合物中的新型聚合物。 本发明还包括在光刻中使用抗反射涂料组合物的方法。 抗反射涂料组合物包含新型聚合物和溶剂组合物，其中抗反射涂层的新型聚合物包含至少一个含有吸收约180nm至约450nm的染料的单元和至少一个不含芳香族官能团的单元。 溶剂可以是有机的，优选地是低毒性的溶剂，或者它可以是水，其可另外含有其它与水可混溶的有机溶剂。
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公开(公告)号：US5733714A
公开(公告)日：1998-03-31
申请号：US724109
申请日：1996-09-30
Applicant: Iain McCulloch , Ralph R. Dammel , Anthony J. Corso , Shuji Ding , Dana L. Durham , Ping-Hung Lu , Ming Kang , Dinesh N. Khanna
Inventor： Iain McCulloch , Ralph R. Dammel , Anthony J. Corso , Shuji Ding , Dana L. Durham , Ping-Hung Lu , Ming Kang , Dinesh N. Khanna
IPC: G03F7/004 , C08F16/26 , C08F18/04 , C08F20/30 , C08F20/58 , C08F26/06 , G03C1/835 , G03F7/09 , G03F7/11 , H01L21/027 , G03C5/00 , C03F8/30
CPC classification number: G03C1/835 , G03F7/091 , Y10S430/151
Abstract: The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or a mixture of organic solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and a unit containing a crosslinking group.
Abstract translation: 本发明涉及一种新颖的抗反射涂层溶液及其在光刻中的应用。 抗反射涂层溶液包括新型聚合物和有机溶剂或有机溶剂的混合物，其中新型聚合物包含含有吸收约180nm至约450nm的染料的单元和含有交联基团的单元。
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公开(公告)号：US5652317A
公开(公告)日：1997-07-29
申请号：US698742
申请日：1996-08-16
Applicant: Iain McCulloch , Ralph R. Dammel , Dana L. Durham , Ping-Hung Lu
Inventor： Iain McCulloch , Ralph R. Dammel , Dana L. Durham , Ping-Hung Lu
IPC: G03F7/11 , C08F8/00 , C08F8/30 , C08F20/60 , C08F220/54 , C08L33/26 , C09D133/24 , C09D133/26 , G03F7/09 , G03F7/32 , H01L21/027 , C08F226/00 , G03G13/06
CPC classification number: G03F7/091 , C08F20/60 , C09D133/26
Abstract: The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or a mixture of organic solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and a unit containing a crosslinking group.
Abstract translation: 本发明涉及一种新颖的抗反射涂层溶液及其在光刻中的应用。 抗反射涂层溶液包括新型聚合物和有机溶剂或有机溶剂的混合物，其中新型聚合物包含含有吸收约180nm至约450nm的染料的单元和含有交联基团的单元。
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公开(公告)号：US5646218A
公开(公告)日：1997-07-08
申请号：US692306
申请日：1996-08-05
Applicant: Thomas J. Lynch , Chester J. Sobodacha , Dana L. Durham
Inventor： Thomas J. Lynch , Chester J. Sobodacha , Dana L. Durham
CPC classification number: G03F7/0236 , C08G8/08 , C08L61/06
Abstract: The present invention relates to a water insoluble, aqueous alkali soluble novolak resin blend, wherein the resin blend comprises two novolaks having dissimilar relative molecular weights and similar dissolution rates, a process for producing such a resin blend, a photoresist containing such a resin blend and a method for producing a semi-conductor device utilizing such a photoresist.
Abstract translation: 本发明涉及一种不溶于水的碱溶性酚醛清漆树脂混合物，其中树脂共混物包含具有不同相对分子量和相似溶解速率的两种酚醛清漆，制备这种树脂共混物的方法，含有这种树脂共混物的光致抗蚀剂， 一种利用这种光致抗蚀剂制造半导体器件的方法。
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