Metal ion reduction in top anti-reflective coatings for photoresists
    1.
    发明授权
    Metal ion reduction in top anti-reflective coatings for photoresists 失效
    用于光致抗蚀剂的顶部抗反射涂层中的金属离子还原

    公开(公告)号:US5516886A

    公开(公告)日:1996-05-14

    申请号:US258898

    申请日:1994-06-10

    CPC分类号: G03F7/091

    摘要: The present invention provides methods for producing top anti-reflective coating compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such top anti-reflective coating compositions.

    摘要翻译: 本发明提供了利用特殊处理的离子交换树脂生产具有非常低水平金属离子的顶部抗反射涂料组合物的方法。 还提供了一种用于制造使用这种顶部抗反射涂层组合物的半导体器件的方法。

    Polyphosphazene binder resins for photoresists comprising as
photosensitizers o-quinone diazide esters
    2.
    发明授权
    Polyphosphazene binder resins for photoresists comprising as photosensitizers o-quinone diazide esters 失效
    多晶磷酸酯树脂,用于光合作用的光催化剂O-QUINONE DIAZIDE ESTERS

    公开(公告)号:US5248585A

    公开(公告)日:1993-09-28

    申请号:US810634

    申请日:1991-12-18

    IPC分类号: C08G79/02 G03F7/023

    摘要: This invention relates to novel radiation sensitive compositions. More particularly the invention relates to photoresists containing phosphorus and nitrogen linked polymers; i.e., polyphosphazenes, useful in the preparation of a relief pattern on a substrate; e.g., a silicon wafer or aluminum plate. The polyphosphazenes of in this invention can be synthesized by the condensation of N-trimethylsilylalkoxyphosphorimides. Radiation sensitive positive photoresist compositions of the invention can be developed in aqueous base developer or organic solvent developer The base developer dissolution properties of the composition can be controlled by incorporating carboxylate groups into the polyphosphazene. The polyphosphazenes utilized in this invention have good solubility properties in various organic solvents and also have good mechanical, electrical, adhesion and thermal properties.

    摘要翻译: 本发明涉及新型的辐射敏感组合物。 更具体地说,本发明涉及含有磷和氮的聚合物的光刻胶; 即聚磷腈,可用于在底物上制备浮雕图案; 例如硅晶片或铝板。 本发明中的聚磷腈可以通过N-三甲基甲硅烷氧基氧磷酰亚胺的缩合来合成。 本发明的辐射敏感正性光致抗蚀剂组合物可以在含水基础显影剂或有机溶剂显影剂中显影。组合物的基底显影剂溶解性能可以通过将羧酸酯基团掺入到聚磷腈中来控制。 本发明中使用的聚磷腈在各种有机溶剂中具有良好的溶解性,并且还具有良好的机械,电学,粘合性和热性能。

    Compositions for removing etching residue and use thereof
    5.
    发明授权
    Compositions for removing etching residue and use thereof 有权
    用于除去蚀刻残渣的组合物及其用途

    公开(公告)号:US06821352B2

    公开(公告)日:2004-11-23

    申请号:US10723737

    申请日:2003-11-26

    IPC分类号: C23G102

    摘要: A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dicarboxylic acid, a buffering agent, a fluorine source, and optionally a water miscible organic solvent.

    摘要翻译: 本文公开了一种用于除去蚀刻残余物的组合物及其使用方法。 在一个方面,提供一种从基材上去除蚀刻残留物的方法,包括:使基材与包含水,有机二羧酸,缓冲剂,氟源和任选的水混溶性有机溶剂的组合物接触。