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公开(公告)号：US20090229629A1
公开(公告)日：2009-09-17
申请号：US12400332
申请日：2009-03-09
申请人： Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
发明人： Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
CPC分类号： G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/31133
摘要： The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.
摘要翻译： 本发明是用于去除光致抗蚀剂的化学汽提器配方以及电子器件衬底的蚀刻和灰化残留物，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。 本发明也是通过使基材与制剂接触来除去光致抗蚀剂和蚀刻和灰化残留物的方法，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。
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公开(公告)号：US20110212866A1
公开(公告)日：2011-09-01
申请号：US12859624
申请日：2010-08-19
申请人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
发明人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
CPC分类号： G03F7/426 , C11D3/0073 , C11D7/06 , C11D7/261 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C11D11/0047 , C23G1/22 , G03F7/425
摘要： The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.
摘要翻译： 本发明涉及富含水的配方及其使用方法，以去除体积光致抗蚀剂，后蚀刻和后残留物，来自Al后端的互连结构的残留物以及污染物。 制剂包含：羟胺; 含有烷基二羟基苯和羟基喹啉的混合物的腐蚀抑制剂; 链烷醇胺，水溶性溶剂或两者的组合; 和至少50重量％的水。
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公开(公告)号：US08518865B2
公开(公告)日：2013-08-27
申请号：US12859624
申请日：2010-08-19
申请人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
发明人： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
CPC分类号： G03F7/426 , C11D3/0073 , C11D7/06 , C11D7/261 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C11D11/0047 , C23G1/22 , G03F7/425
摘要： The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.
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公开(公告)号：US20130061882A1
公开(公告)日：2013-03-14
申请号：US13414339
申请日：2012-03-07
申请人： Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
发明人： Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/044 , C11D3/2034 , C11D3/2058 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/06 , C11D7/261 , C11D7/265 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C23G1/22
摘要： A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa
摘要翻译： 在半导体衬底包括铝的应用中，用于光致抗蚀剂和后蚀刻/后灰渣残留物去除的富水羟胺制剂。 清洁组合物包含约2至约15重量％ 的羟胺; 约50至约80重量％。 的水; 约0.01至约5.0重量％。 的腐蚀抑制剂; 约5至约45重量％。 选自：具有pKa <9.0的链烷醇胺，水混溶性溶剂及其混合物的组分。 这种组合物的使用对于Al基材显示出有效的清洁能力，最小的硅蚀刻，同时保护包含这两种材料的基材的铝。
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公开(公告)号：US08889609B2
公开(公告)日：2014-11-18
申请号：US13414339
申请日：2012-03-07
申请人： Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
发明人： Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
IPC分类号： C11D7/50 , C11D3/20 , C11D11/00 , C11D3/00 , C11D3/30 , C11D7/26 , C11D3/43 , C11D7/06 , C11D7/32 , C11D3/28 , C11D3/04
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/044 , C11D3/2034 , C11D3/2058 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/06 , C11D7/261 , C11D7/265 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C23G1/22
摘要： A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa
摘要翻译： 在半导体衬底包括铝的应用中，用于光致抗蚀剂和后蚀刻/后灰渣残留物去除的富水羟胺制剂。 清洁组合物包含约2至约15重量％ 的羟胺; 约50至约80重量％。 的水; 约0.01至约5.0重量％。 的腐蚀抑制剂; 约5至约45重量％。 选自：具有pKa <9.0的链烷醇胺，水混溶性溶剂及其混合物的组分。 这种组合物的使用对于Al基材显示出有效的清洁能力，最小的硅蚀刻，同时保护包含这两种材料的基材的铝。
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6.发明申请METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING IMPROVED HOT CARRIER IMMUNITY ABILITY 有权制备具有改进的热载体免疫能力的半导体器件的方法公开(公告)号：US20060040448A1
公开(公告)日：2006-02-23
申请号：US10711038
申请日：2004-08-19
申请人： Wen-Koi Lai , Tung-Hsing Lee , Tai-Yuan Lee , Yu-Lung Chin , Yi-Chia Lee , Shyh-Fann Ting
发明人： Wen-Koi Lai , Tung-Hsing Lee , Tai-Yuan Lee , Yu-Lung Chin , Yi-Chia Lee , Shyh-Fann Ting
IPC分类号： H01L21/336
CPC分类号： H01L21/823864 , H01L21/26586 , H01L21/823814 , H01L21/84 , H01L29/6659
摘要： The present invention discloses a method for fabricating a semiconductor device. A substrate is provided. At least one first and second gate structure, having sidewalls, are included on a surface of the substrate. A first ion implantation process is performed to form a shallow-junction doping region of a first conductive type in the substrate next to each of the sidewalls of the first gate structure, followed by the formation of offset spacers on each of the sidewalls of the first and second gate structure. A second ion implantation process is performed to form a shallow-junction doping region of a second conductive type in the substrate next to the offset spacer on each of the sidewalls of the second gate structure.
摘要翻译： 本发明公开了一种半导体器件的制造方法。 提供基板。 具有侧壁的至少一个第一和第二栅极结构被包括在基板的表面上。 执行第一离子注入工艺以在基板中的第一栅极结构的每个侧壁旁边形成第一导电类型的浅结掺杂区域，随后在第一栅极结构的每个侧壁上形成偏置间隔物 和第二门结构。 执行第二离子注入工艺以在第二栅极结构的每个侧壁上的偏移间隔物旁边的衬底中形成第二导电类型的浅结掺杂区域。
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公开(公告)号：US07306681B2
公开(公告)日：2007-12-11
申请号：US10843444
申请日：2004-05-12
申请人： Ya-Lun Cheng , Yi-Chia Lee , Yu-Ren Wang , Neng-Hui Yang
发明人： Ya-Lun Cheng , Yi-Chia Lee , Yu-Ren Wang , Neng-Hui Yang
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , B08B3/08 , C11D3/3942 , C11D3/3947 , C11D7/08 , C11D11/0047 , Y10S438/906
摘要： A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.
摘要翻译： 公开了一种清洁方法和清洁配方。 本发明涉及一种清洗半导体衬底和清洁配方的方法。 本发明利用包含稀释氢氟酸的第一清洗溶液和包含氯化氢和过氧化氢（H 2 O 2 O 2）的第二清洗溶液来清洁半导体衬底而不使用 包括氢氧化铵的碱性溶液。 因此，在选择性外延生长（SEG）工艺中提供半导体衬底的干净的表面以生长具有光滑表面的外延层。
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8.发明授权Method for fabricating a semiconductor device having improved hot carrier immunity ability 有权制造具有改善的热载流子免疫能力的半导体器件的方法公开(公告)号：US07250332B2
公开(公告)日：2007-07-31
申请号：US10711038
申请日：2004-08-19
申请人： Wen-Koi Lai , Tung-Hsing Lee , Tai-Yuan Lee , Yu-Lung Chin , Yi-Chia Lee , Shyh-Fann Ting
发明人： Wen-Koi Lai , Tung-Hsing Lee , Tai-Yuan Lee , Yu-Lung Chin , Yi-Chia Lee , Shyh-Fann Ting
IPC分类号： H01L21/8238
CPC分类号： H01L21/823864 , H01L21/26586 , H01L21/823814 , H01L21/84 , H01L29/6659
摘要： The present invention discloses a method for fabricating a semiconductor device. A substrate is provided. At least one first and second gate structure, having sidewalls, are included on a surface of the substrate. A first ion implantation process is performed to form a shallow-junction doping region of a first conductive type in the substrate next to each of the sidewalls of the first gate structure, followed by the formation of offset spacers on each of the sidewalls of the first and second gate structure. A second ion implantation process is performed to form a shallow-junction doping region of a second conductive type in the substrate next to the offset spacer on each of the sidewalls of the second gate structure.
摘要翻译： 本发明公开了一种半导体器件的制造方法。 提供基板。 具有侧壁的至少一个第一和第二栅极结构被包括在基板的表面上。 执行第一离子注入工艺以在基板中的第一栅极结构的每个侧壁旁边形成第一导电类型的浅结掺杂区域，随后在第一栅极结构的每个侧壁上形成偏置间隔物 和第二门结构。 执行第二离子注入工艺以在第二栅极结构的每个侧壁上的偏移间隔物旁边的衬底中形成第二导电类型的浅结掺杂区域。
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公开(公告)号：US20050252525A1
公开(公告)日：2005-11-17
申请号：US10843444
申请日：2004-05-12
申请人： Ya-Lun Cheng , Yi-Chia Lee , Yu-Ren Wang , Neng-Hui Yang
发明人： Ya-Lun Cheng , Yi-Chia Lee , Yu-Ren Wang , Neng-Hui Yang
CPC分类号： H01L21/02052 , B08B3/08 , C11D3/3942 , C11D3/3947 , C11D7/08 , C11D11/0047 , Y10S438/906
摘要： A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.
摘要翻译： 公开了一种清洁方法和清洁配方。 本发明涉及一种清洗半导体衬底和清洁配方的方法。 本发明利用包含稀释氢氟酸的第一清洗溶液和包含氯化氢和过氧化氢（H 2 O 2 O 2）的第二清洗溶液来清洁半导体衬底而不使用 包括氢氧化铵的碱性溶液。 因此，在选择性外延生长（SEG）工艺中提供半导体衬底的干净的表面以生长具有光滑表面的外延层。
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