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1.发明授权公开(公告)号：US07687447B2
公开(公告)日：2010-03-30
申请号：US12047655
申请日：2008-03-13
IPC分类号： C11D7/50
CPC分类号： C11D7/5022 , C11D7/263 , C11D7/34 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02057
摘要： The present invention relates to semi-aqueous compositions and the method using same, to remove highly cross-linked resists and etch-residues. The compositions are comprised of aminobenzenesulfonic acid, water miscible organic solvent and water.
摘要翻译： 本发明涉及半水性组合物及其使用方法，以去除高度交联的抗蚀剂和蚀刻残留物。 组合物由氨基苯磺酸，水混溶性有机溶剂和水组成。
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2.发明申请Semi-Aqueous Stripping and Cleaning Composition Containing Aminobenzenesulfonic Acid 有权含有氨基苯磺酸的半水性剥离和清洗组合物公开(公告)号：US20090233827A1
公开(公告)日：2009-09-17
申请号：US12047655
申请日：2008-03-13
IPC分类号： C09K13/00
CPC分类号： C11D7/5022 , C11D7/263 , C11D7/34 , C11D11/0047 , G03F7/425 , G03F7/426 , H01L21/02057
摘要： The present invention relates to semi-aqueous compositions and the method using same, to remove highly cross-linked resists and etch-residues. The compositions are comprised of aminobenzenesulfonic acid, water miscible organic solvent and water.
摘要翻译： 本发明涉及半水性组合物及其使用方法，以去除高度交联的抗蚀剂和蚀刻残留物。 组合物由氨基苯磺酸，水混溶性有机溶剂和水组成。
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公开(公告)号：US08440599B2
公开(公告)日：2013-05-14
申请号：US13217994
申请日：2011-08-25
IPC分类号： C11D7/50
CPC分类号： H01L21/02071 , C11D7/10 , C11D7/263 , C11D7/3209 , C11D11/0047 , C23G1/061 , C23G1/18 , G03F7/425 , H01L21/02063 , H01L21/31133
摘要： A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.
摘要翻译： 包含一种或多种包含二醇醚的水溶性有机溶剂的组合物; 水; 含氟化合物，条件是如果含氟化合物是氟化铵，则不向组合物中加入另外的含氟化合物; 任选的季铵化合物; 并且任选地，本文公开了一种能够从制品诸如光致抗蚀剂和/或蚀刻残留物中去除残余物的腐蚀抑制剂。 本文还公开了使用本文公开的组合物从制品中除去残余物的方法。
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公开(公告)号：US07674755B2
公开(公告)日：2010-03-09
申请号：US11602662
申请日：2006-11-21
IPC分类号： C11D7/50
CPC分类号： C11D7/06 , C11D7/34 , C11D11/0047
摘要： A formulation for removing photoresist, ion implanted photoresist, etch residue or BARC comprises: an ammonium hydroxide and a 2-aminobenzothiazole, remainder water. Preferably the formulation comprises: tetramethyl ammonium hydroxide, tolyltriazole, propylene glycol, 2-aminobenzothiazole, dipropylene glycol monomethyl ether, remainder water; more preferably: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water. The invention is also a method of removing materials selected from the group consisting of photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation, described above, to the substrate to remove the material from the substrate.
摘要翻译： 用于除去光致抗蚀剂，离子注入光致抗蚀剂，蚀刻残渣或BARC的制剂包括：氢氧化铵和2-氨基苯并噻唑，其余为水。 优选地，制剂包括：四甲基氢氧化铵，甲苯基三唑，丙二醇，2-氨基苯并噻唑，二丙二醇单甲醚，剩余水; 更优选：1-15重量％的四甲基氢氧化铵，1-5重量％的甲苯基三唑，5-15重量％的丙二醇，1-10重量％的2-氨基苯并噻唑; 二丙二醇单甲醚20-45重量％，剩余水。 本发明还是一种从基材中除去选自光致抗蚀剂，蚀刻残余物，BARC及其组合的材料的方法，包括：将上述制剂施用于基材以从基材中除去材料。
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公开(公告)号：US20070149430A1
公开(公告)日：2007-06-28
申请号：US11602662
申请日：2006-11-21
IPC分类号： C11D7/32
CPC分类号： C11D7/06 , C11D7/34 , C11D11/0047
摘要： A formulation for removing photoresist, ion implanted photoresist, etch residue or BARC comprises: an ammonium hydroxide and a 2-aminobenzothiazole, remainder water. Preferably the formulation comprises: tetramethyl ammonium hydroxide, tolyltriazole, propylene glycol, 2-aminobenzothiazole, dipropylene glycol monomethyl ether, remainder water; more preferably: tetramethyl ammonium hydroxide 1-15 wt %, tolyltriazole 1-5 wt %, propylene glycol 5-15 wt %, 2-aminobenzothiazole 1-10 wt %; dipropylene glycol monomethyl ether 20-45 wt %, remainder water. The invention is also a method of removing materials selected from the group consisting of photoresist, etch residue, BARC and combinations thereof, from a substrate comprising: applying a formulation, described above, to the substrate to remove the material from the substrate.
摘要翻译： 用于除去光致抗蚀剂，离子注入光致抗蚀剂，蚀刻残渣或BARC的制剂包括：氢氧化铵和2-氨基苯并噻唑，其余为水。 优选地，制剂包括：四甲基氢氧化铵，甲苯基三唑，丙二醇，2-氨基苯并噻唑，二丙二醇单甲醚，剩余水; 更优选：1-15重量％的四甲基氢氧化铵，1-5重量％的甲苯基三唑，5-15重量％的丙二醇，1-10重量％的2-氨基苯并噻唑; 二丙二醇单甲醚20-45重量％，剩余水。 本发明还是一种从基材中除去选自光致抗蚀剂，蚀刻残余物，BARC及其组合的材料的方法，包括：将上述制剂施用于基材以从基材中除去材料。
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公开(公告)号：US08030263B2
公开(公告)日：2011-10-04
申请号：US11155654
申请日：2005-06-20
IPC分类号： C11D7/50
CPC分类号： H01L21/02071 , C11D7/10 , C11D7/263 , C11D7/3209 , C11D11/0047 , C23G1/061 , C23G1/18 , G03F7/425 , H01L21/02063 , H01L21/31133
摘要： A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.
摘要翻译： 包含一种或多种包含二醇醚的水溶性有机溶剂的组合物; 水; 含氟化合物，条件是如果含氟化合物是氟化铵，则不向组合物中加入另外的含氟化合物; 任选的季铵化合物; 并且任选地，本文公开了一种能够从制品诸如光致抗蚀剂和/或蚀刻残留物中去除残余物的腐蚀抑制剂。 本文还公开了使用本文公开的组合物从制品中除去残余物的方法。
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公开(公告)号：US20090229629A1
公开(公告)日：2009-09-17
申请号：US12400332
申请日：2009-03-09
申请人： Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
发明人： Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
CPC分类号： G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/31133
摘要： The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.
摘要翻译： 本发明是用于去除光致抗蚀剂的化学汽提器配方以及电子器件衬底的蚀刻和灰化残留物，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。 本发明也是通过使基材与制剂接触来除去光致抗蚀剂和蚀刻和灰化残留物的方法，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。
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公开(公告)号：US20090227483A1
公开(公告)日：2009-09-10
申请号：US12394183
申请日：2009-02-27
申请人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
发明人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
IPC分类号： G03F7/42
摘要： The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.
摘要翻译： 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。
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公开(公告)号：US08357646B2
公开(公告)日：2013-01-22
申请号：US12394183
申请日：2009-02-27
申请人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
发明人： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
IPC分类号： B08B3/00
摘要： The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.
摘要翻译： 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。
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公开(公告)号：US20110311921A1
公开(公告)日：2011-12-22
申请号：US13217994
申请日：2011-08-25
CPC分类号： H01L21/02071 , C11D7/10 , C11D7/263 , C11D7/3209 , C11D11/0047 , C23G1/061 , C23G1/18 , G03F7/425 , H01L21/02063 , H01L21/31133
摘要： A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.
摘要翻译： 包含一种或多种包含二醇醚的水溶性有机溶剂的组合物; 水; 含氟化合物，条件是如果含氟化合物是氟化铵，则不向组合物中加入另外的含氟化合物; 任选的季铵化合物; 并且任选地，本文公开了一种能够从制品诸如光致抗蚀剂和/或蚀刻残留物中去除残余物的腐蚀抑制剂。 本文还公开了使用本文公开的组合物从制品中除去残余物的方法。
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