公开(公告)号：USD659476S1

公开(公告)日：2012-05-15

申请号：US29384522

申请日：2011-01-31

Applicant: Jean-Michel Guillot

Designer： Jean-Michel Guillot

公开(公告)号：US07304347B2

公开(公告)日：2007-12-04

申请号：US10712810

申请日：2003-11-13

Applicant: Richard A. Blanchard ,  Jean-Michel Guillot

Inventor： Richard A. Blanchard ,  Jean-Michel Guillot

IPC: H01L29/76

CPC classification number: H01L29/7802 ,  H01L29/0634 ,  H01L29/66712

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region. A filler material is deposited in the terraced trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.

Abstract translation: 提供了形成功率半导体器件的方法。 该方法开始于提供第一导电类型的衬底，然后在衬底上形成电压维持区域。 通过在衬底上沉积第一导电类型的外延层并在外延层中形成至少一个梯形沟槽形成电压维持区。 梯形沟槽具有多个宽度不同的部分，以在其间限定至少一个环形凸缘。 阻挡材料沿着沟槽的壁沉积。 通过阻挡材料注入第二导电类型的掺杂剂，所述阻挡材料衬在环形凸缘和所述沟槽底部并进入外延层的相邻部分。 掺杂剂扩散以在外延层中形成至少一个环形掺杂区域和位于环形掺杂区域下方的至少一个其它区域。 填充材料沉积在梯形沟槽中以基本上填充沟槽，从而完成电压维持区域。 在电压维持区域上形成第二导电类型的至少一个区域以限定它们之间的接合。

公开(公告)号：US20060261069A1

公开(公告)日：2006-11-23

申请号：US10546953

申请日：2004-02-27

Applicant: Michel Guillot

Inventor： Michel Guillot

IPC: B65D51/20

CPC classification number: B65D47/063 ,  B65D51/185

Abstract: The invention involves a device for closing packages, in particular for single use, of bottle types or packs that can be nested and recycled. The inner membrane sealed capsule permits advances in terms of storage and hygiene. It is of interest to the packaging sectors that contain a product at atmospheric pressure or under pressure, for aerated or sparkling beverages for instances, for varied products such as foods, pharmaceuticals, chemical products, etc.

Abstract translation: 本发明涉及用于封闭可以嵌套和再循环的瓶子类型或包装的包装，特别是单次使用的装置。 内膜密封胶囊允许在储存和卫生方面取得进展。 含有大气压或压力下的产品的包装行业，对于例如食品，药品，化学产品等各种产品，适用于充气或起泡饮料是令人感兴趣的。

公开(公告)号：US08562022B2

公开(公告)日：2013-10-22

申请号：US12485668

申请日：2009-06-16

Applicant: Julien Nadeau ,  Michel Guillot ,  Jean-Christian Methot ,  Russell S. Long

Inventor： Julien Nadeau ,  Michel Guillot ,  Jean-Christian Methot ,  Russell S. Long

IPC: B62D63/08

CPC classification number: B62D21/20 ,  B62D25/2054 ,  B62D53/061

Abstract: Improved trailers (e.g., semi-trailers) are disclosed. The trailers may include a floor having a top surface and a bottom surface, where the top surface is adapted to transport a payload, and an elongated shell connected to the bottom surface of the floor, where the elongated shell defines a portion of a substantially closed torsion-resistant chamber of the trailer. The trailers may have a torsion resistance that is substantially higher than conventional trailers of similar size and/or load capacity. The trailers may weigh substantially less than conventional trailers of similar size and/or load capacity. The trailers may realize a bending resistance that is at least equivalent to the bending resistance of conventional trailers of similar size and/or load capacity.

Abstract translation: 公开了改进的拖车（例如，半挂车）。 拖车可以包括具有顶表面和底表面的地板，其中顶表面适于运输有效载荷，以及连接到地板的底表面的细长壳，其中细长壳限定基本上封闭的一部分 拖车的抗扭转室。 拖车可能具有的扭转阻力明显高于具有类似尺寸和/或承载能力的常规拖车。 拖车的重量可能比具有相似尺寸和/或承载能力的传统拖车要小得多。 拖车可以实现至少等同于具有类似尺寸和/或承载能力的常规拖车的抗弯曲性的抗弯曲性。

公开(公告)号：US08049271B2

公开(公告)日：2011-11-01

申请号：US12772258

申请日：2010-05-03

Applicant: Richard A. Blanchard ,  Jean-Michel Guillot

Inventor： Richard A. Blanchard ,  Jean-Michel Guillot

IPC: H01L29/78

CPC classification number: H01L29/7802 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/66272 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7813

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region. A filler material is deposited in the terraced trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.

Abstract translation: 提供了形成功率半导体器件的方法。 该方法开始于提供第二导电类型的衬底，然后在衬底上形成电压维持区域。 通过在衬底上沉积第一导电类型的外延层并在外延层中形成至少一个梯形沟槽形成电压维持区。 梯形沟槽具有多个宽度不同的部分，以在其间限定至少一个环形凸缘。 阻挡材料沿着沟槽的壁沉积。 通过阻挡材料注入第二导电类型的掺杂剂，所述阻挡材料衬在环形凸缘和所述沟槽底部并进入外延层的相邻部分。 掺杂剂扩散以在外延层中形成至少一个环形掺杂区域和位于环形掺杂区域下方的至少一个其它区域。 填充材料沉积在梯形沟槽中以基本上填充沟槽，从而完成电压维持区域。 在电压维持区域上形成第二导电类型的至少一个区域以限定它们之间的接合。

公开(公告)号：US20100207198A1

公开(公告)日：2010-08-19

申请号：US12772258

申请日：2010-05-03

Applicant: Richard A. Blanchard ,  Jean-Michel Guillot

Inventor： Richard A. Blanchard ,  Jean-Michel Guillot

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7802 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/66272 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7813

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region. A filler material is deposited in the terraced trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.

Abstract translation: 提供了形成功率半导体器件的方法。 该方法开始于提供第二导电类型的衬底，然后在衬底上形成电压维持区域。 通过在衬底上沉积第一导电类型的外延层并在外延层中形成至少一个梯形沟槽形成电压维持区。 梯形沟槽具有多个宽度不同的部分，以在其间限定至少一个环形凸缘。 阻挡材料沿着沟槽的壁沉积。 通过阻挡材料注入第二导电类型的掺杂剂，所述阻挡材料衬在环形凸缘和所述沟槽底部并进入外延层的相邻部分。 掺杂剂扩散以在外延层中形成至少一个环形掺杂区域和位于环形掺杂区域下方的至少一个其它区域。 填充材料沉积在梯形沟槽中以基本上填充沟槽，从而完成电压维持区域。 在电压维持区域上形成第二导电类型的至少一个区域以限定它们之间的接合。

公开(公告)号：US20080142880A1

公开(公告)日：2008-06-19

申请号：US11950156

申请日：2007-12-04

Applicant: Richard A. Blanchard ,  Jean-Michel Guillot

Inventor： Richard A. Blanchard ,  Jean-Michel Guillot

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7802 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/66272 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7813

Abstract: A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region. A filler material is deposited in the terraced trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.

Abstract translation: 提供了形成功率半导体器件的方法。 该方法开始于提供第二导电类型的衬底，然后在衬底上形成电压维持区域。 通过在衬底上沉积第一导电类型的外延层并在外延层中形成至少一个梯形沟槽形成电压维持区。 梯形沟槽具有多个宽度不同的部分，以在其间限定至少一个环形凸缘。 阻挡材料沿着沟槽的壁沉积。 通过阻挡材料注入第二导电类型的掺杂剂，所述阻挡材料衬在环形凸缘和所述沟槽底部并进入外延层的相邻部分。 掺杂剂扩散以在外延层中形成至少一个环形掺杂区域和位于环形掺杂区域下方的至少一个其它区域。 填充材料沉积在梯形沟槽中以基本上填充沟槽，从而完成电压维持区域。 在电压维持区域上形成第二导电类型的至少一个区域以限定它们之间的接合。

公开(公告)号：US20050010149A1

公开(公告)日：2005-01-13

申请号：US10488832

申请日：2002-09-05

Applicant: Michel Guillot

Inventor： Michel Guillot

IPC: A61F5/03 ,  A61F5/30 ,  A61F13/14 ,  A61F15/00 ,  A61F5/00

CPC classification number: A61F5/30 ,  A61F5/03 ,  A61F13/148 ,  A61F15/008

Abstract: The invention concerns an orthosis (1) for preventing and treating hypertrophy (22), keloid, bridle, scar retraction, to improve functional and aesthetic quality and enable scar growth. Said orthosis (2) enables to enhance [sic] the quality of healing, to decrease the number of repair surgical procedures for functional purposes. It provides the patient with more aesthetic movements. Said orthosis is characterized in that it comprises one or more treatment units (2) having a mechanical pressing action (13) on the scar and an activator (3) for enhancing the action of the units (2), for increasing their attachment, for transmitting traction derived from the patient's movements.

Abstract translation: 本发明涉及用于预防和治疗肥大（22），瘢痕疙瘩，brid le，瘢痕缩回的矫形器（1），以改善功能和美学质量并使瘢痕生长。 所述矫形器（2）能够增强愈合质量，减少用于功能目的的修复外科手术的次数。 它为患者提供了更多的审美动作。 所述矫形器的特征在于，其包括在瘢痕上具有机械压迫作用（13）的一个或多个处理单元（2）和用于增强单元（2）的作用的活化剂（3），用于增加其附着，用于 传输来自患者运动的牵引力。

公开(公告)号：US06624494B2

公开(公告)日：2003-09-23

申请号：US10264951

申请日：2002-10-04

Applicant: Richard A. Blanchard ,  Jean-Michel Guillot

Inventor： Richard A. Blanchard ,  Jean-Michel Guillot

IPC: H01L2358

CPC classification number: H01L29/7802 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/66712 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power semiconductor device and a method of forming the same is provided. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material into a portion of the epitaxial layer adjacent to and beneath the bottom of the trench. The dopant is diffused to form a first doped layer in the epitaxial layer and the barrier material is removed from at least the bottom of the trench. The trench is etched through the first doped layer and a filler material is deposited in the trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.

公开(公告)号：US07540850B2

公开(公告)日：2009-06-02

申请号：US10488832

申请日：2002-09-05

Applicant: Michel Guillot

Inventor： Michel Guillot

IPC: A61F5/00

CPC classification number: A61F5/30 ,  A61F5/03 ,  A61F13/148 ,  A61F15/008

Abstract: The invention concerns an orthosis (1) for preventing and treating hypertrophy (22), keloid, bridle, scar retraction, to improve functional and aesthetic quality and enable scar growth. Said orthosis (2) enables to enhance [sic] the quality of healing, to decrease the number of repair surgical procedures for functional purposes. It provides the patient with more aesthetic movements. Said orthosis is characterized in that it comprises one or more treatment units (2) having a mechanical pressing action (13) on the scar and an activator (3) for enhancing the action of the units (2), for increasing their attachment, for transmitting traction derived from the patient's movements.

Abstract translation: 本发明涉及用于预防和治疗肥大（22），瘢痕疙瘩，brid le，瘢痕缩回的矫形器（1），以改善功能和美学质量并使瘢痕生长。 所述矫形器（2）能够增强愈合质量，减少用于功能目的的修复外科手术的次数。 它为患者提供了更多的审美动作。 所述矫形器的特征在于，其包括在瘢痕上具有机械按压作用（13）的一个或多个处理单元（2）和用于增强单元（2）的作用的活化剂（3），用于增加其附着，用于 传输来自患者运动的牵引力。