公开(公告)号：US06907106B1

公开(公告)日：2005-06-14

申请号：US09379439

申请日：1999-08-23

申请人： Raymond D McIntyre ,  Stanley W Johnsen ,  Marcel Marc ,  Michelangelo Delfino ,  Edward Seppi

发明人： Raymond D McIntyre ,  Stanley W Johnsen ,  Marcel Marc ,  Michelangelo Delfino ,  Edward Seppi

IPC分类号： G21G1/12 ,  G21G4/08

CPC分类号： G21G1/12 ,  G21G4/08

摘要： An apparatus and method for irradiating target objects, especially medical stents for in vivo implantation. A linear accelerator provides a high energy electron beam that impinges upon and is received by an x-ray conversion target. The x-ray conversion target is activated by either a static or dynamically moveable electron beam to generate and emit an x-ray flux so as to efficiently intercept the target object. The x-ray flux is directed to the target object for a desired time period and is of sufficiently high energy to efficiently impart radioactive properties to the target object. Alternatively, the target object is positioned within the path of the x-ray flux or is translated within the path during irradiation. Mechanical transport assemblies such as a carousel, rotational and/or linear translator and/or movement tube system also may be provided.

摘要翻译： 用于照射目标物体的装置和方法，特别是用于体内植入的医用支架。 线性加速器提供冲击并由X射线转换目标接收的高能电子束。 X射线转换目标由静态或动态可移动的电子束激活，以产生和发射X射线通量，以有效地拦截目标物体。 x射线通量被引导到目标物体所需的时间段，并且具有足够高的能量以有效地赋予目标物体放射性。 或者，目标物体位于X射线通量的路径内，或者在照射期间在路径内平移。 还可以提供诸如转盘，旋转和/或线性平移器和/或运动管系统之类的机械输送组件。

公开(公告)号：US06626815B1

公开(公告)日：2003-09-30

申请号：US09460509

申请日：1999-12-09

申请人： Michelangelo Delfino ,  Mary E. Day

发明人： Michelangelo Delfino ,  Mary E. Day

IPC分类号： A61N500

CPC分类号： A61L31/086 ,  A61L31/082 ,  A61L31/14 ,  A61N2005/1019

摘要： An apparatus and method of forming a radioactive stent having a radioactive layer. A solution containing a radioactive isotope depositing substance in solution is provided and placed into contact with the stent or any other substrate material capable of receiving the radioactive isotope. The radioactive isotope is deposited on the stent or substrate material. Preferably a phosphorous isotope is used and the solution is polymerized forming polymer chains containing the radioactive isotope. In this embodiment, the phosphorous is bonded with the substrate material in a phosphorous-oxygen-phosphorous network.

摘要翻译： 一种形成具有放射性层的放射性支架的装置和方法。 提供了一种含有溶液中放射性同位素沉积物质的溶液，并将其放置成与支架或能够接收放射性同位素的任何其他基底材料接触。 放射性同位素沉积在支架或基底材料上。 优选使用磷同位素，并且溶液聚合形成含有放射性同位素的聚合物链。 在本实施例中，磷在磷 - 磷 - 磷网络中与衬底材料接合。

公开(公告)号：US06264595B1

公开(公告)日：2001-07-24

申请号：US09244348

申请日：1999-02-04

申请人： Michelangelo Delfino ,  Mary Elizabeth Day

发明人： Michelangelo Delfino ,  Mary Elizabeth Day

IPC分类号： A61N500

CPC分类号： A61K51/1282 ,  A61F2/82 ,  A61N5/1002

摘要： A radioactive transition metal stent, comprising one or more transition metals, wherein the transition metal stent surface is chemically bound to a radioactive material; and a method for producing the radioactive transition metal stent wherein the radioisotope is chemically bound to, and is uniformly confined to the transition metal stent surface without affecting the metallurgical properties of the transition metal stent is disclosed.

摘要翻译： 一种放射性过渡金属支架，包括一种或多种过渡金属，其中所述过渡金属支架表面与放射性材料化学结合; 并且公开了一种放射性过渡金属支架的制造方法，其中放射性同位素与过渡金属支架表面化学结合并均匀地限制，而不影响过渡金属支架的冶金特性。

公开(公告)号：US4549064A

公开(公告)日：1985-10-22

申请号：US482122

申请日：1983-04-05

申请人： Michelangelo Delfino

发明人： Michelangelo Delfino

IPC分类号： H01L21/268 ,  H01L21/3105 ,  B23K26/00

CPC分类号： H01L21/3105 ,  H01L21/268

摘要： An argon-fluorine (ArF) excimer laser is used to selectively heat various Si.sub.3 N.sub.4 materials used in the manufacture of semiconductor devices to elevated temperatures while maintaining active device regions and electrical interconnects at relatively low temperatures, to, for example, anneal the structural layer, induce compositional changes or densification and/or flow of the silicon nitride-based material to round off sharp edges and stops, all without damaging or appreciably affecting the active regions and electrical interconnects of a semiconductor device.

摘要翻译： 氩 - 氟（ArF）准分子激光器用于将制造半导体器件中使用的各种Si 3 N 4材料选择性地加热到升高的温度，同时保持有源器件区域和电互连在相对低的温度下，例如退火结构层， 引起氮化硅基材料的组成变化或致密化和/或流动以使尖锐的边缘和停止，从而不破坏或明显地影响半导体器件的有源区和电互连。

公开(公告)号：US4443493A

公开(公告)日：1984-04-17

申请号：US339600

申请日：1982-01-15

申请人： Michelangelo Delfino

发明人： Michelangelo Delfino

IPC分类号： H01L29/78 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/316 ,  B05D3/06

CPC分类号： H01L21/268 ,  H01L21/3105

摘要： In a semiconductor device, laser energy is used to selectively heat various SiO.sub.2 based materials to elevated temperatures while maintaining the active device region and electrical interconnects at relatively low temperatures, to for example, induce densification and/or flow of the SiO.sub.2 based material to round off sharp edges and stops, without damaging or affecting the active region and electrical interconnects.

摘要翻译： 在半导体器件中，激光能量用于将各种基于SiO 2的材料选择性地加热到升高的温度，同时保持活性器件区域和电互连在相对较低的温度下，例如引起SiO 2基材料的致密化和/或流动到圆形 锐利的边缘和停止，而不损坏或影响有源区域和电气互连。

公开(公告)号：US4415794A

公开(公告)日：1983-11-15

申请号：US244395

申请日：1981-03-16

申请人： Michelangelo Delfino ,  Timothy Reifsteck

发明人： Michelangelo Delfino ,  Timothy Reifsteck

IPC分类号： H01L21/20 ,  H01L21/268 ,  H01L21/31 ,  H01L21/3105 ,  B23K27/00

CPC分类号： H01L21/268 ,  H01L21/3105

摘要： A method for scanning the top surface of a semiconductor wafer prevents damage to the wafer (11) by ensuring that the laser beam (13) does not cross over the edge (11a) of the wafer during the scanning process nor approach within one (1) to two (2) millimeters to the edge of the wafer.

摘要翻译： 用于扫描半导体晶片的顶表面的方法通过确保激光束（13）在扫描过程中不跨过晶片的边缘（11a）而不影响晶片（11）的损伤，也不在一个（1） ）到晶片边缘的两（2）毫米。

公开(公告)号：US06676595B1

公开(公告)日：2004-01-13

申请号：US09379819

申请日：1999-08-24

申请人： Michelangelo Delfino

发明人： Michelangelo Delfino

IPC分类号： A61F202

CPC分类号： A61N5/1002

摘要： A medical implant for use in brachytherapy or other medical treatment preferably having a silicon base and radioactive ions implanted in it. Preferably radioactive xenon ions are used. An ion implantation process is provided for doping the silicon substrate with the radioactive ions in a controlled fashion.

摘要翻译： 用于近距离放射治疗或其他医疗治疗的医疗植入物优选地具有植入其中的硅基质和放射性离子。 优选使用放射性氙离子。 提供了一种离子注入工艺，用于以受控的方式将硅衬底与放射性离子掺杂。

公开(公告)号：US6078644A

公开(公告)日：2000-06-20

申请号：US108574

申请日：1998-07-01

申请人： Mary E. Day ,  Michelangelo Delfino

发明人： Mary E. Day ,  Michelangelo Delfino

IPC分类号： H01J35/10

CPC分类号： H01J35/108 ,  H01J2235/1204 ,  H01J2235/1229

摘要： An x-ray target has a substrate of a carbonaceous material such as graphite which is secured to a rotary shaft so as to rotate therewith. A portion of outer peripheral surface of the substrate is covered by a target plate, while the other portion is covered with a thin iridium layer with thickness in a range between 50 .ANG. and 250 .ANG. so that the trapped gas species like H.sub.2, CO, CO.sub.2 can escape therethrough, and to retard the diffusion of ambient gas species into the substrate while the infrared emissivity of the underlying substrate is not lowered appreciably thereby.

摘要翻译： x射线靶具有固定在旋转轴上以与其一起旋转的碳质材料如石墨的衬底。 基板的外周表面的一部分被靶板覆盖，而另一部分被薄的铱层覆盖，厚度在50至250之间的范围内，使得截留的气体种类如H2，CO，CO2 能够将环境气体物质扩散到衬底中，同时底层衬底的红外发射率不会明显降低。

公开(公告)号：US5021358A

公开(公告)日：1991-06-04

申请号：US277475

申请日：1988-11-23

申请人： Janet M. Flanner ,  Michelangelo Delfino

发明人： Janet M. Flanner ,  Michelangelo Delfino

IPC分类号： H01L21/60 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/76897 ,  H01L21/76877 ,  H01L21/823871

摘要： A method of fabricating a CMOS-type structure entails forming a pair of conductive portions (68 and 70) on a pair of dielectric portions (72 and 74) lying on monocrystalline silicon (60). N-type dopant-containing ions are implanted into the silicon to form a pair of doped regions (78/82) separated by p-type material under one of the dielectric portions. Boron dopant-containing ions are similarly implanted to form a pair of doped regions (84) separated by n-type material under the other dielectric portion. A sacrificial oxidation is performed by oxidizing surface material of each conductive portion and each doped region and then removing at least part of the so oxidized material (86) down to the underlying silicon. Tungsten (88 and 90) is deposited on the exposed silicon after which a patterned electrical conductor is provided over the tungsten. Use of the sacrificial oxidation substantially reduces tunnel formation during the tungsten deposition.

摘要翻译： 制造CMOS型结构的方法需要在位于单晶硅（60）上的一对电介质部分（72和74）上形成一对导电部分（68和70）。 将含有N型掺杂剂的离子注入到硅中以形成在p介电体部分之一之下由p型材料分离的一对掺杂区域（78/82）。 类似地注入含硼掺杂剂的离子以形成在另一电介质部分之下由n型材料分离的一对掺杂区域（84）。 通过氧化每个导电部分和每个掺杂区域的表面材料，然后将至少部分如此被氧化的材料（86）去除到下面的硅来进行牺牲氧化。 钨（88和90）沉积在暴露的硅上，之后在钨上提供图案化的导电体。 在钨沉积期间，牺牲氧化的使用显着减少了隧道的形成。

公开(公告)号：US4686113A

公开(公告)日：1987-08-11

申请号：US810954

申请日：1985-12-18

申请人： Michelangelo Delfino ,  Bruce R. Cairns

发明人： Michelangelo Delfino ,  Bruce R. Cairns

IPC分类号： C23C16/507 ,  H01J37/32 ,  B05D3/02

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J2237/3323

摘要： A deposition reactor system is described for producing a coating containing a predetermined component on a substrate from a plasma containing such component in an ionized state. The substrate is supported on a susceptor within a reactor chamber to which is introduced a gas containing the predetermined component. A radio frequency field is inductively coupled to the gas, forming a plasma in the reactor chamber in the region of the susceptor. The susceptor is maintained at ground potential in the radio frequency field.

摘要翻译： 描述了沉积反应器系统，用于在离子化状态下由含有这种组分的等离子体在基板上生产含有预定组分的涂层。 衬底支撑在反应室内的基座上，引入含有预定部件的气体。 射频场感应耦合到气体，在基座区域内的反应室中形成等离子体。 基站在射频场保持接地电位。