Plasma confinement in a low pressure electrically grounded R.F. heated
reactor and deposition method
    1.
    发明授权
    Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method 失效
    低压电等离子体约束R.F. 加热反应器和沉积方法

    公开(公告)号:US4686113A

    公开(公告)日:1987-08-11

    申请号:US810954

    申请日:1985-12-18

    IPC分类号: C23C16/507 H01J37/32 B05D3/02

    摘要: A deposition reactor system is described for producing a coating containing a predetermined component on a substrate from a plasma containing such component in an ionized state. The substrate is supported on a susceptor within a reactor chamber to which is introduced a gas containing the predetermined component. A radio frequency field is inductively coupled to the gas, forming a plasma in the reactor chamber in the region of the susceptor. The susceptor is maintained at ground potential in the radio frequency field.

    摘要翻译: 描述了沉积反应器系统,用于在离子化状态下由含有这种组分的等离子体在基板上生产含有预定组分的涂层。 衬底支撑在反应室内的基座上,引入含有预定部件的气体。 射频场感应耦合到气体,在基座区域内的反应室中形成等离子体。 基站在射频场保持接地电位。

    Low temperature plasma nitridation process and applications of nitride
films formed thereby
    2.
    发明授权
    Low temperature plasma nitridation process and applications of nitride films formed thereby 失效
    低温等离子体氮化工艺和由此形成的氮化膜的应用

    公开(公告)号:US4762728A

    公开(公告)日:1988-08-09

    申请号:US801955

    申请日:1985-11-26

    摘要: A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is introduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultaneously. The thin nitride films that are formed by the process have application both as barriers for device isolation and as dielectric components of electrical devices.

    摘要翻译: 通过在包含电容耦合到rf发生器的电极的真空室中在衬底上进行表面反应,在硅衬底的表面上制备氮化硅层。 室内的第二电极或腔室本身的金属壁连接到地面。 要处理的硅衬底被放置在电极中的一个电极上并与其物理接触,并且将含有氮的反应气体引入室中。 然后在电极之间施加rf电压以电离和激活气体,并且使离子和其它活性物质被引导到硅衬底中。 作为施加射频功率的结果产生的氮离子和其它活性物质可以同时指向多个晶片的表面。 通过该方法形成的薄氮化物膜既可用作器件隔离的障碍,也可用作电气器件的介电元件。