公开(公告)号：US07371282B2

公开(公告)日：2008-05-13

申请号：US11484691

申请日：2006-07-12

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为起始材料的气相沉积工艺在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。

公开(公告)号：US20080011223A1

公开(公告)日：2008-01-17

申请号：US11484691

申请日：2006-07-12

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

公开(公告)号：US20080206121A1

公开(公告)日：2008-08-28

申请号：US12081636

申请日：2008-04-18

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C01B33/00 ,  C23C16/06

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为原料的气相沉积法在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。