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    Method for the Selective Deposition of Germanium Nanofilm on a Silicon Substrate and Semiconductor Devices Made Therefrom
    4.
    发明申请
    Method for the Selective Deposition of Germanium Nanofilm on a Silicon Substrate and Semiconductor Devices Made Therefrom 有权
    锗硅纳米薄膜的选择性沉积方法及其制造的半导体器件

    公开(公告)号：US20090302426A1

    公开(公告)日：2009-12-10

    申请号：US12136193

    申请日：2008-06-10

    申请人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    发明人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    IPC分类号： H01L21/329 ,  H01L29/868

    CPC分类号： F01P3/2285 ,  F01P2025/04 ,  Y10S977/774

    摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

    摘要翻译： 提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。 还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。 还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。 提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。 该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

    Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer
    5.
    发明授权
    Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer 有权
    包括设置在二氧化硅层的开口内的锗纳米薄膜层的半导体器件

    公开(公告)号：US07737534B2

    公开(公告)日：2010-06-15

    申请号：US12136193

    申请日：2008-06-10

    申请人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    发明人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    IPC分类号： H01L29/868

    CPC分类号： F01P3/2285 ,  F01P2025/04 ,  Y10S977/774

    摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

    摘要翻译： 提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。 还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。 还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。 提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。 该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。