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    Nuclear radiation detection system
    4.
    发明申请
    Nuclear radiation detection system 失效
    核辐射检测系统

    公开(公告)号：US20080179534A1

    公开(公告)日：2008-07-31

    申请号：US11699335

    申请日：2007-01-30

    申请人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

    发明人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

    IPC分类号： G01J1/42

    CPC分类号： G01J1/429 ,  G01J1/0488

    摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

    摘要翻译： 公开了使用窄带UV晶体滤波器的核辐射检测系统。 由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。 核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器 紫外线过滤器总成。 窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。 可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。 辐射检测系统可用于监测核电厂或核废料堆场的污染。 也可用于在发生核事故时监视污染。

    Nuclear radiation detection system
    5.
    发明授权
    Nuclear radiation detection system 失效
    核辐射检测系统

    公开(公告)号：US07525099B2

    公开(公告)日：2009-04-28

    申请号：US11699335

    申请日：2007-01-30

    申请人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

    发明人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

    IPC分类号： G01J1/42

    CPC分类号： G01J1/429 ,  G01J1/0488

    摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

    摘要翻译： 公开了使用窄带UV晶体滤波器的核辐射检测系统。 由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。 核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器 紫外线过滤器总成。 窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。 可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。 辐射检测系统可用于监测核电厂或核废料堆场的污染。 也可用于在发生核事故时监视污染。

    Method for the Selective Deposition of Germanium Nanofilm on a Silicon Substrate and Semiconductor Devices Made Therefrom
    6.
    发明申请
    Method for the Selective Deposition of Germanium Nanofilm on a Silicon Substrate and Semiconductor Devices Made Therefrom 有权
    锗硅纳米薄膜的选择性沉积方法及其制造的半导体器件

    公开(公告)号：US20090302426A1

    公开(公告)日：2009-12-10

    申请号：US12136193

    申请日：2008-06-10

    申请人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    发明人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    IPC分类号： H01L21/329 ,  H01L29/868

    CPC分类号： F01P3/2285 ,  F01P2025/04 ,  Y10S977/774

    摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

    摘要翻译： 提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。 还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。 还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。 提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。 该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

    Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer
    7.
    发明授权
    Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer 有权
    包括设置在二氧化硅层的开口内的锗纳米薄膜层的半导体器件

    公开(公告)号：US07737534B2

    公开(公告)日：2010-06-15

    申请号：US12136193

    申请日：2008-06-10

    申请人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    发明人： Sean R. McLaughlin ,  Narsingh Bahadur Singh ,  Brian Wagner ,  Andre Berghmans ,  David J. Knuteson ,  David Kahler ,  Anthony A. Margarella

    IPC分类号： H01L29/868

    CPC分类号： F01P3/2285 ,  F01P2025/04 ,  Y10S977/774

    摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.

    摘要翻译： 提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。 还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。 还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。 提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。 该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

    Novel narrowband crystal UV filters
    10.
    发明申请
    Novel narrowband crystal UV filters 审中-公开
    新型窄带水晶UV滤光片

    公开(公告)号：US20080096097A1

    公开(公告)日：2008-04-24

    申请号：US11580834

    申请日：2006-10-16

    申请人： Narsingh Bahadur Singh

    发明人： Narsingh Bahadur Singh

    IPC分类号： H01M10/34

    CPC分类号： G02B5/208 ,  C01G53/006 ,  C01P2002/52 ,  C01P2002/84 ,  C01P2006/80 ,  C03C4/085

    摘要： Crystals having a narrowband transmission window in the UV range and methods for producing such crystals are disclosed. The method comprises the steps of preparing a saturated nutrient solution of a nickel compound and a dopant salt; and incubating the nutrient solution under conditions suitable for crystal growth. The nickel compound is nickel silicon fluoride, nickel fluoroborate, or potassium nickel sulfate. The dopant salt is a salt of cobalt, calcium, barium, strontium, lead, copper, germanium, praseodymium, neodymium, zinc, lithium, potassium, sodium, rubidium, or cesium. The doped nickel compounds crystals have a narrow transmission window in the UV range and can be used as filters for optical sensors in applications such as the passive missile approach warning systems.

    摘要翻译： 公开了在UV范围内具有窄带透射窗的晶体和用于制造这种晶体的方法。 该方法包括以下步骤：制备镍化合物和掺杂盐的饱和营养溶液; 并在适合于晶体生长的条件下孵育营养液。 镍化合物是氟化硅镍，氟硼酸镍或硫酸镍镍。 掺杂盐是钴，钙，钡，锶，铅，铜，锗，镨，钕，锌，锂，钾，钠，铷或铯的盐。 掺杂的镍化合物晶体在UV范围内具有窄的透射窗，并且可以用作诸如被动导弹接近警报系统的应用中的光学传感器的滤光器。