公开(公告)号：US4543266A

公开(公告)日：1985-09-24

申请号：US660551

申请日：1984-10-15

申请人： Seitaro Matsuo ,  Mikiho Kiuchi ,  Misao Sekimoto

发明人： Seitaro Matsuo ,  Mikiho Kiuchi ,  Misao Sekimoto

IPC分类号： G03B42/02 ,  C23C16/50 ,  C23C16/511 ,  G03F1/00 ,  G03F1/54 ,  B05D5/12

CPC分类号： G03F1/22 ,  Y10S438/977

摘要： A thin film which becomes a membrane is formed over one major surface of a substrate by a plasma deposition process utilizing microwave electron cyclotron resonance. The substrate is then removed, other than a portion of the substrate which remains as a frame, so as to form a membrane structure. A dense and high quality membrane is formed at a low temperature and the internal stress of the membrane controlled by varying the conditions under which the plasma deposition process is carried out and by heat treating the thin film after its formation.

摘要翻译： 通过使用微波电子回旋共振的等离子体沉积工艺，在衬底的一个主表面上形成成膜的薄膜。 然后除去衬底，除了保留为框架的衬底的一部分之外，以形成膜结构。 在低温下形成致密且高质量的膜，并且通过改变进行等离子体沉积工艺的条件并通过在其形成之后热处理薄膜来控制膜的内应力。

公开(公告)号：US5003152A

公开(公告)日：1991-03-26

申请号：US273518

申请日：1988-10-19

申请人： Seitaro Matsuo ,  Hiroshi Nishimura ,  Mikiho Kiuchi

发明人： Seitaro Matsuo ,  Hiroshi Nishimura ,  Mikiho Kiuchi

IPC分类号： H01L21/205 ,  C23C16/511 ,  H01J27/18 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32357 ,  C23C16/511 ,  H01J27/18

摘要： In a plasma processing apparatus, a gas to be activated into a plasma is introduced into a plasma formation chamber through a gas introducing pipe. Input microwave energy from a microwave source is also supplied to the plasma formation chamber, so that the introduced gas is activated into the plasma by electron cyclotron resonance. The input microwave energy in a TE mode from the microwave source is received by a tapered waveguide in which a dielectric plate is accommodated, so that at least a part of the input microwave energy is transformed into microwave energy in a TM mode or hybrid mode having an electric field component in the direction of the propagation of the input microwave. Microwave energy in both the modes is introduced into the plasma formation chamber through a microwave introducing window. As a result, the microwave energy in the propagation mode having an electric field component or a longitudinal wave component which is parallel to the direction of the microwave propagation is introduced into the plasma formation chamber. The microwave energy is efficiently supplied to the plasma region which satisfies the ECR conditions and then is absorbed by the plasma. Thus the efficiency of the plasma formation is enhanced and accordingly the throughput of the plasma processing is improved.

摘要翻译： PCT No.PCT / JP88 / 00401 Sec。 371日期：1988年10月19日 102（e）日期1988年10月19日PCT提交1988年4月25日PCT公布。 出版物WO88 / 08659 日期：1988年11月3日。在等离子体处理装置中，通过气体导入管将待激活等离子体的气体引入等离子体形成室。 从微波源输入微波能量也被提供给等离子体形成室，使得引入的气体通过电子回旋共振被激活到等离子体中。 来自微波源的TE模式的输入微波能量由容纳电介质板的锥形波导接收，使得输入的微波能量的至少一部分以TM模式或混合模式转换为微波能量，具有 在输入微波的传播方向上的电场分量。 这两种模式中的微波能量通过微波引入窗口引入等离子体形成室。 结果，将具有与微波传播方向平行的电场分量或纵波分量的传播模式中的微波能量引入等离子体形成室。 微波能量被有效地提供给满足ECR条件的等离子体区域，然后被等离子体吸收。 因此，提高了等离子体形成的效率，因此提高了等离子体处理的生产量。

公开(公告)号：US4238706A

公开(公告)日：1980-12-09

申请号：US966621

申请日：1978-12-05

申请人： Hideo Yoshihara ,  Mikiho Kiuchi ,  Satoshi Nakayama ,  Toa Hayasaka ,  Junji Matsui

发明人： Hideo Yoshihara ,  Mikiho Kiuchi ,  Satoshi Nakayama ,  Toa Hayasaka ,  Junji Matsui

IPC分类号： H01J9/14 ,  H01J35/10 ,  H01L21/027 ,  H01J35/08

CPC分类号： H01J35/106

摘要： There is disclosed a soft x-ray source comprising (a) a substrate formed of a thermally conductive material, such as copper or a copper alloy, which tends to generate predominantly hard x-rays upon the collision of an electron beam, (b) an intermediate layer formed on the substrate, the intermediate layer being at least one of rhodium, silver, palladium, and molybdenum, and (c) a silicon film formed on the intermediate layer. There is also disclosed an x-ray lithographic apparatus comprising (a) an electron beam source, (b) the soft x-ray source described above, and (c) means for irradiating an object with the emitted soft x-rays. The method for manufacturing the soft x-ray source comprises (a) preparing a substrate, (b) setting the substrate in a vacuum chamber, (c) introducing a gas or vapor-containing silicon in a vacuum chamber, and (d) forming a silicon film on the intermediate layer by generating a plasma within the vacuum chamber.

摘要翻译： 公开了一种软X射线源，其包括（a）由诸如铜或铜合金的导热材料形成的基底，其在电子束的碰撞时主要产生硬的x射线，（b） 形成在所述基板上的中间层，所述中间层是铑，银，钯和钼中的至少一种，以及（c）在所述中间层上形成的硅膜。 还公开了一种x射线光刻设备，其包括（a）电子束源，（b）上述软x射线源，和（c）用于用发射的软X射线照射物体的装置。 用于制造软X射线源的方法包括（a）制备基底，（b）将基底设置在真空室中，（c）在真空室中引入气体或含蒸汽的硅，和（d）形成 通过在真空室内产生等离子体，在中间层上形成硅膜。