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2.发明授权Method for forming a semiconductor transistor device with optimized dopant profile 有权用于形成具有优化的掺杂剂分布的半导体晶体管器件的方法公开(公告)号：US08993424B2
公开(公告)日：2015-03-31
申请号：US13288201
申请日：2011-11-03
申请人： Chia-Wen Liu , Tsung-Hsing Yu , Dhanyakumar Mahaveer Sathaiya , Wei-Hao Wu , Ken-Ichi Goto , Tzer-Min Shen , Zhiqiang Wu
发明人： Chia-Wen Liu , Tsung-Hsing Yu , Dhanyakumar Mahaveer Sathaiya , Wei-Hao Wu , Ken-Ichi Goto , Tzer-Min Shen , Zhiqiang Wu
IPC分类号： H01L21/425 , H01L21/336 , H01L29/66 , H01L29/78 , H01L29/10 , H01L29/165 , H01L21/265
CPC分类号： H01L29/66492 , H01L21/26506 , H01L21/2658 , H01L21/26586 , H01L29/1045 , H01L29/105 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/7833 , Y10S438/931
摘要： Provided is a transistor and a method for forming a transistor in a semiconductor device. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation with a very low tilt angle is used to form areas of high dopant concentration at edges of the transistor channel to alleviate short channel effects. The transistor structure so-formed includes a reduced dopant impurity concentration at the substrate interface with the gate dielectric and a peak concentration about 10-50 nm below the surface. The dopant profile also includes the transistor channel having high dopant impurity concentration areas at opposed ends of the transistor channel.
摘要翻译： 提供了一种用于在半导体器件中形成晶体管的晶体管和方法。 该方法包括在晶体管沟道区域中执行至少一个注入操作，然后在引入另外的掺杂杂质之前在注入区上形成碳化硅/硅复合膜。 使用具有非常低的倾斜角的光晕注入操作来在晶体管沟道的边缘处形成高掺杂浓度的区域，以减轻短沟道效应。 如此形成的晶体管结构包括在与栅极电介质的衬底界面处的减少的掺杂剂杂质浓度和在表面下方约10-50nm的峰值浓度。 掺杂物分布还包括在晶体管沟道的相对端处具有高掺杂剂杂质浓度区域的晶体管沟道。
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3.发明申请GALACTOKINASE INHIBITORS FOR THE TREATMENT AND PREVENTION OF ASSOCIATED DISEASES AND DISORDERS 有权用于治疗和预防相关疾病和疾病的GALACTOKINASE抑制剂公开(公告)号：US20140288100A1
公开(公告)日：2014-09-25
申请号：US14346400
申请日：2011-09-23
申请人： Matthew B. Boxer , Martin J. Walsh , Li Liu , Cordelle D. Tanega , Min Shen , Kent Lai , Manshu Tang , Douglas S. Auld
发明人： Matthew B. Boxer , Martin J. Walsh , Li Liu , Cordelle D. Tanega , Min Shen , Kent Lai , Manshu Tang , Douglas S. Auld
IPC分类号： C07D495/10 , C07D417/14 , C07D403/12 , C07D413/14 , C07D413/12 , C07D491/107
CPC分类号： A61K31/517 , A61K31/506 , A61K31/527 , C07D403/12 , C07D413/12 , C07D413/14 , C07D417/14 , C07D491/107 , C07D493/10 , C07D495/10
摘要： Disclosed are inhibitors of human galactokinase of formula (1) that are useful in treating or preventing a galactokinase mediated disease or disorder, e.g., galactosemia. Also disclosed are a composition comprising a pharmaceutically acceptable carrier and at least one inhibitor of the invention, and a method of treating or preventing such disease or disorder in a mammal. Formula (I)
摘要翻译： 公开了可用于治疗或预防半乳糖激酶介导的疾病或病症例如半乳糖血症的式（1）的人类半乳糖激酶的抑制剂。 还公开了包含药学上可接受的载体和本发明的至少一种抑制剂的组合物，以及治疗或预防哺乳动物中的这种疾病或病症的方法。 式（I）
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公开(公告)号：US20130113047A1
公开(公告)日：2013-05-09
申请号：US13288189
申请日：2011-11-03
申请人： Mahaveer Sathaiya Dhanyakumar , Wei-Hao Wu , Tsung-Hsing Yu , Chia-Wen Liu , Tzer-Min Shen , Ken-Ichi Goto , Zhiqiang Wu
发明人： Mahaveer Sathaiya Dhanyakumar , Wei-Hao Wu , Tsung-Hsing Yu , Chia-Wen Liu , Tzer-Min Shen , Ken-Ichi Goto , Zhiqiang Wu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0653 , H01L21/26586 , H01L21/76232 , H01L29/1033 , H01L29/1045 , H01L29/105 , H01L29/1095 , H01L29/167 , H01L29/66492 , H01L29/6659 , H01L29/66651 , H01L29/78 , H01L29/7833
摘要： A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized.
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公开(公告)号：US08332124B2
公开(公告)日：2012-12-11
申请号：US12625049
申请日：2009-11-24
申请人： Sam George , Suhao He , Achim Karl-Erich Heibel , Min Shen
发明人： Sam George , Suhao He , Achim Karl-Erich Heibel , Min Shen
CPC分类号： F01N3/021 , F01N2510/00 , F01N2510/06 , F01N2900/1606 , Y02T10/20
摘要： Mass based methods and systems for estimating soot load in a filter of an after-treatment system for exhaust stream are provided. The after-treatment system can comprise a sensor, a filter, and a processor configured to estimate soot load in the filter based on a mass based multi-layer model. An example system includes a virtual sensor comprising an estimator for providing information corresponding to a filter outlet NO2 concentration. An example method includes the steps of providing the mass based multi-layer model, passing the exhaust stream through the filter, and using the sensor to monitor a condition of the exhaust stream. The example method further includes the steps of calculating a total regeneration rate based on the multi-layer model by solving a second-order ordinary differential equation with a plurality of parameters using an analytical approach, and estimating the soot load based on the calculated total regeneration rate.
摘要翻译： 提供了用于估计用于排气流的后处理系统的过滤器中的烟灰负荷的基于质量的方法和系统。 后处理系统可以包括传感器，过滤器和被配置为基于基于质量的多层模型来估计过滤器中的烟灰负荷的处理器。 示例系统包括虚拟传感器，其包括用于提供与过滤器出口NO 2浓度相对应的信息的估计器。 一个示例性方法包括以下步骤：提供基于质量的多层模型，使废气流通过过滤器，并使用传感器来监测废气流的状况。 该示例方法还包括以下步骤：基于多层模型，通过使用分析方法求解具有多个参数的二阶常微分方程，并基于所计算的总再生来估计烟灰负荷，计算总再生率 率。
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公开(公告)号：US08059677B1
公开(公告)日：2011-11-15
申请号：US12427960
申请日：2009-04-22
CPC分类号： G06F17/505
摘要： Structures and methods to facilitate channel bundling are disclosed. In one embodiment, signal distribution circuitry includes a data path with at least two registers coupled to adjacent sets of data channels in a bundle of data channel sets. In another embodiment, self-switch circuits allow channels in a bundle of channel-sets to switch from bundle-wide signals to locally generated signals after the bundle-wide signals have been synchronously distributed to all channel sets in the bundle. In a particular embodiment, signal distribution circuitry is used to distribute a divided clock signal. In another particular embodiment, signal distribution circuitry is used to distribute enable signals for first-in first-out circuits (“FIFOs”) located in channels of each data channel set in a channel set bundle. In a particular aspect of an embodiment, FIFO read and write operations across a channel set bundle are initiated such that a difference between read and write pointer signals is the same in each channel set.
摘要翻译： 公开了促进通道捆绑的结构和方法。 在一个实施例中，信号分配电路包括数据路径，其中至少两个寄存器耦合到一组数据信道集合中的相邻数据信道集合。 在另一个实施例中，自交换电路允许信道集合中的信道在束宽信号已经被同步分布到分组中的所有信道集之后从束范围信号切换到本地产生的信号。 在特定实施例中，信号分配电路用于分配分频时钟信号。 在另一特定实施例中，信号分配电路用于分配位于通道组束中的每个数据通道的通道中的先进先出电路（“FIFO”）的使能信号。 在一个实施例的一个特定方面，跨越信道集束的FIFO读和写操作被启动，使得每个信道集合中读指针信号和写指针信号之间的差异是相同的。
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公开(公告)号：US20100040218A1
公开(公告)日：2010-02-18
申请号：US12521944
申请日：2007-12-11
申请人： Min Shen , Zhisong Wang , Wenjie Ling , Chengnian Shen , Lu Zhang
发明人： Min Shen , Zhisong Wang , Wenjie Ling , Chengnian Shen , Lu Zhang
IPC分类号： H04M3/42
CPC分类号： H04M3/58 , H04L65/1016 , H04L65/1063 , H04L65/1093 , H04L65/1096 , H04M3/4283 , H04M7/123
摘要： This invention provides consultative transfer service method and apparatus. The method comprises the following steps: firstly, user A establishes a call with user B, and then, user B establishes a call with user C and initiates a call transfer request of requesting to transfer its call with user A to user C; the application server of user B heads off the request and returns an accept response to user B; the application server of user B firstly initiates a call invitation to user C, acquires the media parameter information of user C, and instructs user C to replace the call user C and user B; the application server of user B initiates a call re-invitation to user A, provides the media parameter information of user C, instructs user A to carry out media switch, and acquires the media parameter information of user A; the application server of user B provides the media parameter information of user A to user C, and instructs user C to establish a media stream connection with user A; and user C releases its original call with user B.
摘要翻译： 本发明提供咨询转移服务方法和装置。 该方法包括以下步骤：首先用户A建立与用户B的呼叫，然后用户B与用户C建立呼叫，并发起请求与用户A的呼叫转移给用户C的呼叫转移请求; 用户B的应用服务器退出请求，并向用户B返回接受响应; 用户B的应用服务器首先向用户C发起呼叫邀请，获取用户C的媒体参数信息，并指示用户C替换呼叫用户C和用户B; 用户B的应用服务器发起对用户A的呼叫重新请求，提供用户C的媒体参数信息，指示用户A进行媒体切换，取得用户A的媒体参数信息; 用户B的应用服务器向用户C提供用户A的媒体参数信息，并指示用户C与用户A建立媒体流连接; 用户C释放其与用户B的原始呼叫。
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8.发明申请公开(公告)号：US20090000106A1
公开(公告)日：2009-01-01
申请号：US11969922
申请日：2008-01-07
申请人： Chia-Cheng Chuang , Ruey-Beei Wu , Tze-Min Shen
发明人： Chia-Cheng Chuang , Ruey-Beei Wu , Tze-Min Shen
IPC分类号： H01P11/00
CPC分类号： H01P11/008 , H01P1/047 , H01P1/2088 , H01P7/065 , Y10T29/49002 , Y10T29/49005 , Y10T29/49016 , Y10T29/4908
摘要： A method for forming a vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.
摘要翻译： 提供了一种用于形成用于非相邻谐振器的垂直耦合结构的方法，以具有第一和第二谐振器，电介质材料层，第一和第二高频传输线以及至少一个通孔。 第一和第二谐振器分别具有第一和第二相对的金属表面。 介电材料层设置在第一和第二谐振器的相对的第二金属表面之间。 第一和第二传输线分别布置在第一谐振器和第二谐振器的第一金属表面的侧面。 第一高频传输线通过通极垂直连接到第二高频传输线。
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9.发明申请VoIP terminal capable of having conversation through both internet and PSTN 有权VoIP终端能够通过互联网和PSTN进行对话公开(公告)号：US20060187898A1
公开(公告)日：2006-08-24
申请号：US11043921
申请日：2005-01-28
申请人： Hong Chou , Min-Chieh Wu , Yu-Min Shen , Hsiao-Wen Tin , Chia-Hsuan Wu , Yoke Kok
发明人： Hong Chou , Min-Chieh Wu , Yu-Min Shen , Hsiao-Wen Tin , Chia-Hsuan Wu , Yoke Kok
IPC分类号： H04L12/66
CPC分类号： H04M1/2535
摘要： A VoIP terminal, which supports to make a phone call through both PSTN and Internet is disclosed. A local subscriber may choose to have a conversation through PSTN or Internet on his own. Besides, by reference to a switch such as a relay, the VoIP terminal is able to establish a PSTN connection under some special cases, such as the terminal power off or Internet shutdown.
摘要翻译： 公开了支持通过PSTN和因特网进行电话呼叫的VoIP终端。 本地用户可以选择通过PSTN或Internet自己进行会话。 此外，通过参考诸如中继的交换机，VoIP终端能够在某些特殊情况下建立PSTN连接，例如终端电源关闭或因特网关闭。
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