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    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20140042530A1

    公开(公告)日：2014-02-13

    申请号：US13963161

    申请日：2013-08-09

    Applicant: Min-Kwon CHO ,  Takayuki GOMI ,  Chan-Ho PARK ,  Nam-Ki CHO ,  Won-Sang CHOI

    Inventor： Min-Kwon CHO ,  Takayuki GOMI ,  Chan-Ho PARK ,  Nam-Ki CHO ,  Won-Sang CHOI

    IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78

    CPC classification number: H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

    Abstract: A semiconductor device includes a substrate including a first region and a second region, a trench-gate transistor in the first region, the trench-gate transistor including a first trench in the substrate, a gate filling at least part of the first trench, and a source in the substrate and on each sidewall of the first trench, a first field diffusion junction in the second region, an interlayer insulating film on the substrate, the interlayer insulating film covering the trench-gate transistor and the first field diffusion junction, a first contact in the first region, the first contact passing through the interlayer insulating film and contacting the source, and a second contact in the second region, the second contact passing through the interlayer insulating film and contacting the first field diffusion junction, the first contact and the second contact having an equal height and including a same material.

    Abstract translation: 一种半导体器件包括：包括第一区域和第二区域的衬底;第一区域中的沟槽栅极晶体管，沟槽栅极晶体管包括衬底中的第一沟槽，填充至少部分第一沟槽的栅极，以及 在第一沟槽的衬底和每个侧壁上的源极，第二区域中的第一场扩散结，衬底上的层间绝缘膜，覆盖沟槽栅晶体管的层间绝缘膜和第一场扩散结， 所述第一接触通过所述层间绝缘膜并接触所述源，所述第二接触在所述第二区域中，所述第二接触通过所述层间绝缘膜并接触所述第一场扩散结，所述第一接触 并且第二触点具有相同的高度并且包括相同的材料。

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