公开(公告)号：US20120212255A1

公开(公告)日：2012-08-23

申请号：US13242060

申请日：2011-09-23

申请人： Hyung-su Jeong ,  Ho-jung Kim ,  Hyun-sik Choi

发明人： Hyung-su Jeong ,  Ho-jung Kim ,  Hyun-sik Choi

IPC分类号： H03K19/173 ,  G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  H03K19/1733

摘要： The logic circuit includes at least one variable resistance device configured such that a resistance value of the at least one variable resistance device varies according to at least one selected value. The selected value is selected from among a voltage and a current of an input signal, and the at least one variable resistance device is configured to memorize the resistance value. The logic circuit is configured to store multi-level data by setting the memorized resistance value.

摘要翻译： 逻辑电路包括至少一个可变电阻器件，其被配置为使得至少一个可变电阻器件的电阻值根据至少一个选定值而变化。 选择的值从输入信号的电压和电流中选择，并且至少一个可变电阻装置被配置为存储电阻值。 逻辑电路被配置为通过设置存储的电阻值来存储多电平数据。

公开(公告)号：US08138510B2

公开(公告)日：2012-03-20

申请号：US12662925

申请日：2010-05-12

申请人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

发明人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/24

CPC分类号： H01L33/10 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12

摘要： A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer.

摘要翻译： 提供了一种氮化镓（GaN）发光器件及其制造方法，该方法包括在硅衬底上依次形成缓冲层和第一氮化物层，并通过干蚀刻第一氮化物层形成多个图案 。 每个图案包括彼此面对的一对侧壁。 反射层沉积在第一氮化物层上，使得该对的一个侧壁被反射层暴露。 通过从暴露的侧壁水平生长n型氮化物，形成覆盖第一氮化物层的n型氮化物层，并且在n型氮化物层上形成GaN基发光结构层。

公开(公告)号：US20110291120A1

公开(公告)日：2011-12-01

申请号：US13109263

申请日：2011-05-17

申请人： Young-jo Tak ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

发明人： Young-jo Tak ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

IPC分类号： H01L27/15 ,  H01L33/06

CPC分类号： H01L33/382 ,  H01L33/08 ,  H01L33/405 ,  H01L33/641 ,  H01L2933/0016

摘要： Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and a bridge for partially connecting the cell regions are disposed, thereby providing a light emitting device that controls stress with relative ease and integrates electrical connections between the cell regions.

摘要翻译： 本发明的示例性实施例涉及具有连接结构的发光器件和制造发光器件的方法。 制造方法可以包括在其上设置多个单元区域和用于部分连接单元区域的桥的基板上形成发光区域和电极层，从而提供相对容易地控制应力的发光装置 电池区之间的电连接。

公开(公告)号：US20110272712A1

公开(公告)日：2011-11-10

申请号：US12926854

申请日：2010-12-14

申请人： Hyung-su Jeong ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak ,  Jae-won Lee

发明人： Hyung-su Jeong ,  Young-soo Park ,  Su-hee Chae ,  Bok-ki Min ,  Jun-youn Kim ,  Hyun-gi Hong ,  Young-jo Tak ,  Jae-won Lee

IPC分类号： H01L33/12 ,  H01L33/00

CPC分类号： H01L33/0025 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

摘要： Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

摘要翻译： 示例性实施例涉及包括图案化发光单元的发光器件和制造发光器件的方法。 发光器件包括在半导体层的顶部上的第一电极和在半导体层的底部上的第二电极，其中半导体层是由多个堆叠形成的图案阵列。 多个堆叠之间的空间填充有绝缘层，并且第一电极在绝缘层上。

公开(公告)号：US20110121330A1

公开(公告)日：2011-05-26

申请号：US12662925

申请日：2010-05-12

申请人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

发明人： Young-jo Tak ,  Jun-youn Kim ,  Hyun-gi Hong ,  Jae-won Lee ,  Hyung-su Jeong

IPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12

摘要： A gallium nitride (GaN) light emitting device and a method of manufacturing the same are provided, the method including sequentially forming a buffer layer and a first nitride layer on a silicon substrate, and forming a plurality of patterns by dry etching the first nitride layer. Each pattern includes a pair of sidewalls facing each other. A reflective layer is deposited on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer. An n-type nitride layer that covers the first nitride layer is formed by horizontally growing an n-type nitride from the exposed sidewall, and a GaN-based light emitting structure layer is formed on the n-type nitride layer.

摘要翻译： 提供了一种氮化镓（GaN）发光器件及其制造方法，该方法包括在硅衬底上依次形成缓冲层和第一氮化物层，并通过干蚀刻第一氮化物层形成多个图案 。 每个图案包括彼此面对的一对侧壁。 反射层沉积在第一氮化物层上，使得该对的一个侧壁被反射层暴露。 通过从暴露的侧壁水平生长n型氮化物，形成覆盖第一氮化物层的n型氮化物层，并且在n型氮化物层上形成GaN基发光结构层。

公开(公告)号：US20130200427A1

公开(公告)日：2013-08-08

申请号：US13550032

申请日：2012-07-16

申请人： Hyung-su Jeong ,  Jai-kwang Shin ,  Nam-young Lee ,  Ji-hoon Lee ,  Min-kwon Cho ,  Yong-cheol Choi ,  Hyuk-soon Choi

发明人： Hyung-su Jeong ,  Jai-kwang Shin ,  Nam-young Lee ,  Ji-hoon Lee ,  Min-kwon Cho ,  Yong-cheol Choi ,  Hyuk-soon Choi

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L29/36 ,  H01L29/6634 ,  H01L29/7397

摘要： A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.

摘要翻译： 晶体管包括器件部分和集电极层。 器件部分位于半导体衬底的第一侧，并且包括栅极和发射极。 集电极层位于半导体衬底的与第一侧相对的第二侧上。 集电极层是杂质掺杂的外延层，并具有非正态分布的掺杂分布。

公开(公告)号：US08477055B2

公开(公告)日：2013-07-02

申请号：US13157730

申请日：2011-06-10

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Hyung-su Jeong

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Hyung-su Jeong

IPC分类号： H03M1/66

CPC分类号： H03M1/1061 ,  G11C13/0002 ,  H03M1/808

摘要： A digital-to-analog converter (DAC) includes: a plurality of first controllers and a plurality of resistor devices. The plurality of first controllers are configured to be selectively switched on according to a received digital signal to control an analog signal according to the received digital signal. The plurality of resistor devices are respectively connected to the plurality of first controllers. The plurality of resistor devices include non-volatile memory devices.

摘要翻译： 数模转换器（DAC）包括：多个第一控制器和多个电阻器件。 多个第一控制器被配置为根据所接收的数字信号选择性地接通，以根据所接收的数字信号来控制模拟信号。 多个电阻器件分别连接到多个第一控制器。 多个电阻器件包括非易失性存储器件。

公开(公告)号：US20120133538A1

公开(公告)日：2012-05-31

申请号：US13157730

申请日：2011-06-10

申请人： Hyun-sik Choi ,  Ho-jung Kim ,  Hyung-su Jeong

发明人： Hyun-sik Choi ,  Ho-jung Kim ,  Hyung-su Jeong

IPC分类号： H03M1/78

CPC分类号： H03M1/1061 ,  G11C13/0002 ,  H03M1/808

摘要： A digital-to-analog converter (DAC) includes: a plurality of first controllers and a plurality of resistor devices. The plurality of first controllers are configured to be selectively switched on according to a received digital signal to control an analog signal according to the received digital signal. The plurality of resistor devices are respectively connected to the plurality of first controllers. The plurality of resistor devices include non-volatile memory devices.

摘要翻译： 数模转换器（DAC）包括：多个第一控制器和多个电阻器件。 多个第一控制器被配置为根据所接收的数字信号选择性地接通，以根据所接收的数字信号来控制模拟信号。 多个电阻器件分别连接到多个第一控制器。 多个电阻器件包括非易失性存储器件。

公开(公告)号：US20130049802A1

公开(公告)日：2013-02-28

申请号：US13597732

申请日：2012-08-29

申请人： Hyun-sik CHOI ,  Ho-jung KIM ,  Ki-chul KIM ,  Jai-kwang SHIN ,  Joong-ho CHOI ,  Hyung-su JEONG

发明人： Hyun-sik CHOI ,  Ho-jung KIM ,  Ki-chul KIM ,  Jai-kwang SHIN ,  Joong-ho CHOI ,  Hyung-su JEONG

IPC分类号： H03K19/173

CPC分类号： H03K19/17756

摘要： A logic device may include a first functional block, the first functional block including, a first storage block, a second storage block, and a first function controller. In a first operation time period, the first function controller may be configured to receive a first configuration selection signal and a first configuration command signal that instructs a first function be configured, select the first storage block as a configured storage block in the first operation time period based on the first configuration selection signal, and configure the first function in the first storage block based on the first configuration command signal.

摘要翻译： 逻辑设备可以包括第一功能块，第一功能块包括第一存储块，第二存储块和第一功能控制器。 在第一操作时间段中，第一功能控制器可以被配置为接收第一配置选择信号和指示第一功能的第一配置命令信号，在第一操作时间中选择第一存储块作为配置的存储块 基于第一配置选择信号，并且基于第一配置命令信号来配置第一存储块中的第一功能。

公开(公告)号：US08003419B2

公开(公告)日：2011-08-23

申请号：US12458900

申请日：2009-07-27

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。