公开(公告)号：US07193728B2

公开(公告)日：2007-03-20

申请号：US10214472

申请日：2002-08-07

申请人： Masayoshi Ichikawa ,  Takahiro Yamaguchi ,  Minako Yoshida ,  Mani Soma

发明人： Masayoshi Ichikawa ,  Takahiro Yamaguchi ,  Minako Yoshida ,  Mani Soma

IPC分类号： G01B11/14 ,  G01B11/00

CPC分类号： G01R31/2891 ,  G01B11/14 ,  G01R31/01 ,  G01R31/2851 ,  G01R31/2887

摘要： A processing apparatus for processing an electronic device having a light emitting unit, includes: a light receiving unit for receiving light emitted by the light emitting unit; a position detector for detecting the position of the electronic device; and a processing unit for processing the electronic device based on the position of the electronic device detected by the position detector.

摘要翻译： 一种用于处理具有发光单元的电子设备的处理设备，包括：光接收单元，用于接收由所述发光单元发射的光; 位置检测器，用于检测电子设备的位置; 以及处理单元，用于基于由位置检测器检测到的电子设备的位置来处理电子设备。

公开(公告)号：US07253443B2

公开(公告)日：2007-08-07

申请号：US10205592

申请日：2002-07-25

申请人： Minako Yoshida ,  Takahiro Yamaguchi ,  Masayoshi Ichikawa ,  Mani Soma

发明人： Minako Yoshida ,  Takahiro Yamaguchi ,  Masayoshi Ichikawa ,  Mani Soma

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L23/544 ,  H01L22/32 ,  H01L27/15 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/0401

摘要： An electronic device having a semiconductor circuit formed therein includes a semiconductor device in which the semiconductor circuit is formed; and a light emitting device, formed integrally with the semiconductor device, for emitting light indicating a reference position of the semiconductor device.

摘要翻译： 其中形成有半导体电路的电子器件包括形成半导体电路的半导体器件; 以及与半导体器件一体形成的用于发出指示半导体器件的基准位置的光的发光器件。

公开(公告)号：US06174744B1

公开(公告)日：2001-01-16

申请号：US09538117

申请日：2000-03-29

申请人： Takashi Watanabe ,  Minako Yoshida

发明人： Takashi Watanabe ,  Minako Yoshida

IPC分类号： G01R3126

CPC分类号： G01R1/06744 ,  G01R1/06727 ,  G01R1/07342 ,  G01R1/07392 ,  G01R31/2886 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing a contact structure and a probe card makes it possible to test a semiconductor integrated circuit device formed on a semiconductor wafer having a pin pitch of 0.5 mm or smaller. The contact structure includes a micro contact pin having electric conductivity formed on one end of a beam which is movable in a vertical direction, and a piezoelectric element formed on the beam to drive the beam in the vertical direction. The beam is made of silicon on the surface of which is formed of a conductive thin film, and the micro contact pin has a pyramid shape. The piezoelectric element is a bimorph plate mounted on an upper surface of the beam or both upper and lower surfaces of the beam.

摘要翻译： 制造接触结构和探针卡的方法使得可以测试形成在具有0.5mm或更小的引脚间距的半导体晶片上的半导体集成电路器件。 接触结构包括具有形成在可在垂直方向上移动的梁的一端上的导电性的微接触销和形成在梁上以在垂直方向上驱动光束的压电元件。 光束由硅制成，其表面由导电薄膜形成，微接触销具有金字塔形状。 压电元件是安装在梁的上表面或梁的上表面和下表面上的双压电晶片。

公开(公告)号：US6072190A

公开(公告)日：2000-06-06

申请号：US751851

申请日：1996-11-18

申请人： Takashi Watanabe ,  Minako Yoshida

发明人： Takashi Watanabe ,  Minako Yoshida

IPC分类号： G01R31/26 ,  B81B3/00 ,  G01R1/067 ,  G01R1/073 ,  G01R31/28 ,  H01L21/66 ,  H01L23/58 ,  H01L23/48 ,  H01L23/52 ,  H01L29/82

CPC分类号： G01R1/06744 ,  G01R1/07342 ,  G01R1/07392 ,  G01R31/2886 ,  G01R1/06727 ,  H01L2924/0002

摘要： A micro contact structure and a probe card to be used in testing performance of a semiconductor integrated circuit device formed on a semiconductor wafer have improved contact characteristics. The contact structure includes a micro contact pin having electric conductivity formed on one end of a beam which is movable in a vertical direction, and a piezoelectric element formed on the beam to drive the beam in the vertical direction. The beam is made of silicon on the surface of which is formed of a conductive thin film, and the micro contact pin has a pyramid shape. The piezoelectric element is a bimorph plate mounted on an upper surface of the beam or both upper and lower surfaces of the beam.

摘要翻译： 用于测试形成在半导体晶片上的半导体集成电路器件的性能的微接触结构和探针卡具有改善的接触特性。 接触结构包括具有形成在可在垂直方向上移动的梁的一端上的导电性的微接触销和形成在梁上以在垂直方向上驱动光束的压电元件。 光束由硅制成，其表面由导电薄膜形成，微接触销具有金字塔形状。 压电元件是安装在梁的上表面或梁的上表面和下表面上的双压电晶片。