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1.发明授权Electronic device with integrally formed light emitting device and supporting member 失效具有整体形成的发光装置和支撑构件的电子装置公开(公告)号：US07253443B2
公开(公告)日：2007-08-07
申请号：US10205592
申请日：2002-07-25
CPC分类号： H01L23/544 , H01L22/32 , H01L27/15 , H01L2223/54426 , H01L2223/54453 , H01L2223/54493 , H01L2224/13 , H01L2924/00014 , H01L2224/0401
摘要： An electronic device having a semiconductor circuit formed therein includes a semiconductor device in which the semiconductor circuit is formed; and a light emitting device, formed integrally with the semiconductor device, for emitting light indicating a reference position of the semiconductor device.
摘要翻译： 其中形成有半导体电路的电子器件包括形成半导体电路的半导体器件; 以及与半导体器件一体形成的用于发出指示半导体器件的基准位置的光的发光器件。
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公开(公告)号：US07193728B2
公开(公告)日：2007-03-20
申请号：US10214472
申请日：2002-08-07
CPC分类号： G01R31/2891 , G01B11/14 , G01R31/01 , G01R31/2851 , G01R31/2887
摘要： A processing apparatus for processing an electronic device having a light emitting unit, includes: a light receiving unit for receiving light emitted by the light emitting unit; a position detector for detecting the position of the electronic device; and a processing unit for processing the electronic device based on the position of the electronic device detected by the position detector.
摘要翻译： 一种用于处理具有发光单元的电子设备的处理设备，包括：光接收单元，用于接收由所述发光单元发射的光; 位置检测器，用于检测电子设备的位置; 以及处理单元，用于基于由位置检测器检测到的电子设备的位置来处理电子设备。
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公开(公告)号：US20060187337A1
公开(公告)日：2006-08-24
申请号：US11334752
申请日：2006-01-19
IPC分类号： H04N5/222
摘要： There is provided a position detection apparatus for detecting position of an image pickup device that outputs an output signal corresponding to intensity of detected light, having a light source for generating light, an illumination lens for illuminating the light generated by the light source onto the image pickup device, a position detecting section for detecting relative position of the image pickup device with respect to the illumination lens based on the output signal outputted out of the image pickup device corresponding to the light received via the illumination lens and a moving section for changing the relative position of the image pickup device to position set in advance by moving at least one of the image pickup device and the illumination lens based on the relative position detected by the position detecting section.
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4.发明授权Position detection apparatus, position detection method, testing apparatus, and camera module manufacturing apparatus 有权位置检测装置，位置检测方法，测试装置和相机模块制造装置公开(公告)号：US07525593B2
公开(公告)日：2009-04-28
申请号：US11334752
申请日：2006-01-19
摘要： There is provided a position detection apparatus for detecting position of an image pickup device that outputs an output signal corresponding to intensity of detected light, having a light source for generating light, an illumination lens for illuminating the light generated by the light source onto the image pickup device, a position detecting section for detecting relative position of the image pickup device with respect to the illumination lens based on the output signal outputted out of the image pickup device corresponding to the light received via the illumination lens and a moving section for changing the relative position of the image pickup device to position set in advance by moving at least one of the image pickup device and the illumination lens based on the relative position detected by the position detecting section.
摘要翻译： 提供了一种位置检测装置，用于检测输出与具有用于产生光的光源的检测光的强度对应的输出信号的图像拾取装置的位置，用于将由光源产生的光照射到图像上的照明透镜 拾取装置，位置检测部分，用于基于从经由照明透镜接收的光对应于从图像拾取装置输出的输出信号和用于改变图像拾取装置的移动部分，检测图像拾取装置相对于照明透镜的相对位置; 基于由位置检测部检测到的相对位置，通过移动图像拾取装置和照明透镜中的至少一个，预先设置图像拾取装置的相对位置。
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5.发明授权Position detection apparatus, position detection method, electronic part carrying apparatus, and electronic beam exposure apparatus 失效位置检测装置，位置检测方法，电子部件搬运装置和电子束曝光装置公开(公告)号：US07049608B2
公开(公告)日：2006-05-23
申请号：US10713280
申请日：2003-11-15
IPC分类号： H01J37/304
CPC分类号： G03F9/7088 , G01B11/00 , G03F9/7092 , H01J37/3045 , H01J2237/3175
摘要： A position detection apparatus detecting a position of a mark similar to a template image from an input image has a calculation block. The calculation block includes phase difference calculation means and mark position detection means. The phase difference calculation means calculates a phase difference between a phase component of each frequency component when the template image is transformed into frequency components and a phase component for each frequency component when an input image is transformed into frequency components with a reference point being set at a predetermined position on the input image. The phase component difference calculated by the phase difference calculation means is transformed into a phase impulse response function, according to which the mark position detection means detects the position of the mark on the input image.
摘要翻译： 从输入图像检测类似于模板图像的标记的位置的位置检测装置具有计算块。 计算块包括相位差计算装置和标记位置检测装置。 相位差计算装置计算当将模板图像变换为频率分量时的每个频率分量的相位分量和当输入图像被变换成频率分量的每个频率分量的相位分量之间的相位差时，参考点被设置在 在输入图像上的预定位置。 由相位差计算装置计算的相位分量差变换为相位脉冲响应函数，根据该相位脉冲响应函数，标记位置检测装置检测输入图像上标记的位置。
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公开(公告)号：US06584236B1
公开(公告)日：2003-06-24
申请号：US09413818
申请日：1999-10-07
IPC分类号： A06K932
CPC分类号： G06T7/0004 , G06T7/73 , G06T2207/10061 , G06T2207/30141 , G06T2207/30148
摘要： An image processing apparatus for detecting the inclination of an object is provided. This image processing apparatus has a read means which reads the object and outputs image data, an amount of change calculation means which calculates the sum of the amounts of change of the image data of the object in at least one direction, and an inclination calculation means which calculates the inclination of the object based on the sum calculated by the amount of change calculation means.
摘要翻译： 提供了一种用于检测物体的倾斜度的图像处理装置。 该图像处理装置具有读取对象并输出图像数据的读取装置，改变计算装置，其计算至少一个方向上的对象的图像数据的变化量之和和倾斜计算装置 其基于由变化量计算装置计算的总和来计算物体的倾斜度。
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7.发明授权Method of producing β-SiAION, β-SiAION, and products using the same 有权生产方法-SiAION，＆bgr; -SiAION以及使用该产品的产品公开(公告)号：US08926864B2
公开(公告)日：2015-01-06
申请号：US13697556
申请日：2011-04-21
申请人： Masayoshi Ichikawa , Hideyuki Emoto
发明人： Masayoshi Ichikawa , Hideyuki Emoto
IPC分类号： C09K11/08 , C09K11/59 , C09K11/64 , C09K11/77 , C04B35/597 , C04B35/626 , C04B35/64 , H05B33/14 , H01L33/50 , C01B21/082
CPC分类号： C09K11/7729 , C04B35/597 , C04B35/6262 , C04B35/6268 , C04B35/64 , C04B2235/3217 , C04B2235/3224 , C04B2235/3418 , C04B2235/3865 , C04B2235/3878 , C04B2235/3895 , C04B2235/422 , C04B2235/658 , C04B2235/6587 , C04B2235/721 , C04B2235/767 , C04B2235/77 , C04B2235/9646 , C09K11/0883 , C09K11/7734 , H01L33/502 , H05B33/14
摘要： A method of producing β-SiAlON includes a sintering process, in which β-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C. The method provides new β-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the β-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere.
摘要翻译： 一种生产-SiAlON的方法包括一种烧结工艺，其中，SiAlON原料，氮化硅，氮化铝，光学活性元素化合物和至少一种选自氧化铝和氧化硅的化合物的混合物是 在1820℃至2200℃的温度范围内烧结。该方法通过将多个氮化硼容器放置在石墨盒中来提供碳含量低且具有高发光强度的新型SiAlON，以允许SiAlON 原料填充在多个氮化硼容器中，容易与氮气接触，并在氮气气氛中进行烧结。
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公开(公告)号：US08709282B2
公开(公告)日：2014-04-29
申请号：US13500450
申请日：2010-10-27
IPC分类号： C09K11/64
CPC分类号： C09K11/7734 , C01B21/0826 , C01P2002/54 , C01P2002/84 , C01P2004/03 , C01P2004/51 , C01P2006/60 , C09K11/0883
摘要： Provided is a production method of a β-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a β-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a β-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid.
摘要翻译： 本发明提供了可以提高发光强度而不添加除了组成“ial”型赛隆荧光物质的元素以外的金属元素的“ial”型赛隆荧光物质的制造方法。 也就是说，在氮化物或氮化物的晶体中含有作为发光中心的光学活性元素的荧光物质的制造方法中，通过对包括 金属化合物粉末和光学活性元素化合物; 用于在氮气氛下冷却后对烧成品进行热处理的高温退火处理; 在稀有气体气氛下对高温退火产品进行热处理的稀有气体退火工艺; 以及用酸处理稀有气体处理产物的方法。
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公开(公告)号：US20080252212A1
公开(公告)日：2008-10-16
申请号：US12155820
申请日：2008-06-10
IPC分类号： H01J1/88
CPC分类号： H01L31/0203 , H01L23/3121 , H01L33/08 , H01L33/38 , H01L33/486 , H01L33/56 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/16 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12041 , H01L2924/181 , Y10S362/80 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A solid-state device having: a flip-chip mounted solid-state element; a power receiving/feeding portion having a mounting substrate to allow that a mounting surface of the solid-state element forms substantially the same plane as a surface of the mounting substrate; and an inorganic sealing portion made of an inorganic sealing material having a thermal expansion coefficient equal to that of the power receiving/feeding portion for sealing the solid-state element.
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10.发明申请公开(公告)号：US20130106277A1
公开(公告)日：2013-05-02
申请号：US13697556
申请日：2011-04-21
申请人： Masayoshi Ichikawa , Hideyuki Emoto
发明人： Masayoshi Ichikawa , Hideyuki Emoto
CPC分类号： C09K11/7729 , C04B35/597 , C04B35/6262 , C04B35/6268 , C04B35/64 , C04B2235/3217 , C04B2235/3224 , C04B2235/3418 , C04B2235/3865 , C04B2235/3878 , C04B2235/3895 , C04B2235/422 , C04B2235/658 , C04B2235/6587 , C04B2235/721 , C04B2235/767 , C04B2235/77 , C04B2235/9646 , C09K11/0883 , C09K11/7734 , H01L33/502 , H05B33/14
摘要： A method of producing β-SiAlON includes a sintering process, in which β-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C. The method provides new β-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the β-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere.
摘要翻译： 制造β-SiAlON的方法包括烧结工艺，其中将β-SiAlON原料，氮化硅，氮化铝，光学活性元素化合物和至少一种选自氧化铝和氧化硅的化合物的混合物烧结在 温度范围为1820℃至2200℃。该方法通过将多个氮化硼容器放置在石墨盒中以使包含的β-SiAlON起始材料在碳含量方面提供新的β-SiAlON，并具有高的发光强度 多个氮化硼容器容易与氮气接触，并在氮气气氛中进行烧结。
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