公开(公告)号：US20110297965A1

公开(公告)日：2011-12-08

申请号：US12888757

申请日：2010-09-23

申请人： Yosuke Akimoto ,  Ryuichi Togawa ,  Hiroshi Ito ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

发明人： Yosuke Akimoto ,  Ryuichi Togawa ,  Hiroshi Ito ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/268 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/50 ,  H01L2224/16

摘要： According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting the first and second main surfaces, and a light-emitting layer. The first and second electrode portions are provided on the second main surface of the semiconductor layer. The first insulating film covers the second main surface of the semiconductor layer and the third main surface of the semiconductor layer. The metal layer is stacked on at least the second electrode portion of the first and the second electrode portions, and the metal layer extends until reaching a part of the first insulating film. The part is continuously extended from the first insulating film covering the third main surface.

摘要翻译： 根据一个实施例，发光器件包括半导体层，第一和第二电极部分，第一绝缘膜和金属层。 半导体层包括第一主表面，与第一主表面相对的第二主表面，连接第一和第二主表面的第三主表面和发光层。 第一和第二电极部分设置在半导体层的第二主表面上。 第一绝缘膜覆盖半导体层的第二主表面和半导体层的第三主表面。 金属层至少堆叠在第一和第二电极部分的第二电极部分上，并且金属层延伸直到到达第一绝缘膜的一部分。 该部分从覆盖第三主表面的第一绝缘膜连续延伸。

公开(公告)号：US20110297995A1

公开(公告)日：2011-12-08

申请号：US12888754

申请日：2010-09-23

申请人： Yosuke Akimoto ,  Ryuichi Togawa ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

发明人： Yosuke Akimoto ,  Ryuichi Togawa ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

IPC分类号： H01L33/38 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/11 ,  H01L2224/14104 ,  H01L2924/00012

摘要： In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. Each of band-gap energy of the second insulating film and band-gap energy of the semiconductor layer are smaller than energy of the laser light.

摘要翻译： 在一个实施例中，公开了一种用于制造发光器件的方法。 该方法可以包括从半导体层去除衬底。 半导体层设置在基板的第一主表面上。 半导体层包括发光层。 至少半导体层的顶表面和侧表面被第一绝缘膜覆盖。 提供与半导体层电连接的第一电极部分和第二电极部分。 第一绝缘膜被第二绝缘膜覆盖。 通过从基板的第二主表面侧的激光照射半导体层来进行去除。 第二主表面与第一主表面相对。 第二绝缘膜的带隙能量和半导体层的带隙能量的每一个都小于激光的能量。

公开(公告)号：US20110284910A1

公开(公告)日：2011-11-24

申请号：US12886092

申请日：2010-09-20

申请人： Miyuki Iduka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

发明人： Miyuki Iduka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

IPC分类号： H01L33/38

CPC分类号： H01L33/385 ,  H01L33/14

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在发光层和第一主表面之间的半导体层的一部分的侧面上。 第二互连层设置在与第二主表面相对的一侧的第二开口中和第一绝缘层上，以连接到设置在侧面上的第二电极。 第二互连层设置在半导体层的该部分的侧面上并插入第二电极。

公开(公告)号：US08933480B2

公开(公告)日：2015-01-13

申请号：US12793945

申请日：2010-06-04

申请人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

发明人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

IPC分类号： H01L33/00 ,  H01L33/48 ,  H01L33/38 ,  H01L33/54 ,  H01L33/62

CPC分类号： H01L33/486 ,  H01L33/0079 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor stack, a first electrode, a second electrode, a first interconnect, an insulating film, and a second interconnect. The semiconductor stack includes a first major surface, a second major surface provided on a side opposite to the first major surface, a side face, and a light emitting layer. The first electrode is provided on the first major surface. The second electrode is provided at least on a peripheral portion of the second major surface. The first interconnect is provided on the first electrode. The insulating film is provided on the side face of the semiconductor stack. The second interconnect is provided on the side face of the semiconductor stack via the insulating film. The second interconnect is connected to the second electrode in outside of the peripheral portion of the second major surface of the semiconductor stack.

摘要翻译： 根据一个实施例，半导体发光器件包括半导体堆叠，第一电极，第二电极，第一互连，绝缘膜和第二互连。 半导体堆叠包括第一主表面，设置在与第一主表面相对的一侧的第二主表面，侧面和发光层。 第一电极设置在第一主表面上。 第二电极至少设置在第二主表面的周边部分上。 第一互连设置在第一电极上。 绝缘膜设置在半导体叠层的侧面上。 第二互连经由绝缘膜设置在半导体堆叠的侧面上。 第二互连在半导体堆叠的第二主表面的外围部分的外部连接到第二电极。

公开(公告)号：US08729592B2

公开(公告)日：2014-05-20

申请号：US12886092

申请日：2010-09-20

申请人： Miyuki Iduka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

发明人： Miyuki Iduka ,  Yosuke Akimoto ,  Akihiro Kojima ,  Yoshiaki Sugizaki

IPC分类号： H01L33/00

CPC分类号： H01L33/385 ,  H01L33/14

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在发光层和第一主表面之间的半导体层的一部分的侧面上。 第二互连层设置在与第二主表面相对的一侧的第二开口中和第一绝缘层上，以连接到设置在侧面上的第二电极。 第二互连层设置在半导体层的该部分的侧面上并插入第二电极。

公开(公告)号：US20110298001A1

公开(公告)日：2011-12-08

申请号：US13173073

申请日：2011-06-30

申请人： Yosuke Akimoto ,  Ryuichi Togawa ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

发明人： Yosuke Akimoto ,  Ryuichi Togawa ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

IPC分类号： H01L33/36

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. The first insulating film is made of silicon nitride. The second insulating film is made of polyimide.

摘要翻译： 在一个实施例中，公开了一种用于制造发光器件的方法。 该方法可以包括从半导体层去除衬底。 半导体层设置在基板的第一主表面上。 半导体层包括发光层。 至少半导体层的顶表面和侧表面被第一绝缘膜覆盖。 提供与半导体层电连接的第一电极部分和第二电极部分。 第一绝缘膜被第二绝缘膜覆盖。 通过从基板的第二主表面侧的激光照射半导体层来进行去除。 第二主表面与第一主表面相对。 第一绝缘膜由氮化硅制成。 第二绝缘膜由聚酰亚胺制成。

公开(公告)号：US20110204396A1

公开(公告)日：2011-08-25

申请号：US12793945

申请日：2010-06-04

申请人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

发明人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

IPC分类号： H01L33/36 ,  H01L33/00 ,  H01L21/78 ,  H01L33/62

CPC分类号： H01L33/486 ,  H01L33/0079 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor stack, a first electrode, a second electrode, a first interconnect, an insulating film, and a second interconnect. The semiconductor stack includes a first major surface, a second major surface provided on a side opposite to the first major surface, a side face, and a light emitting layer. The first electrode is provided on the first major surface. The second electrode is provided at least on a peripheral portion of the second major surface. The first interconnect is provided on the first electrode. The insulating film is provided on the side face of the semiconductor stack. The second interconnect is provided on the side face of the semiconductor stack via the insulating film. The second interconnect is connected to the second electrode in outside of the peripheral portion of the second major surface of the semiconductor stack.

摘要翻译： 根据一个实施例，半导体发光器件包括半导体堆叠，第一电极，第二电极，第一互连，绝缘膜和第二互连。 半导体堆叠包括第一主表面，设置在与第一主表面相对的一侧的第二主表面，侧面和发光层。 第一电极设置在第一主表面上。 第二电极至少设置在第二主表面的周边部分上。 第一互连设置在第一电极上。 绝缘膜设置在半导体叠层的侧面上。 第二互连经由绝缘膜设置在半导体堆叠的侧面上。 第二互连在半导体堆叠的第二主表面的外围部分的外部连接到第二电极。