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1.发明授权公开(公告)号：US09311439B2
公开(公告)日：2016-04-12
申请号：US14336155
申请日：2014-07-21
申请人： Moon-Gyu Jeong
发明人： Moon-Gyu Jeong
IPC分类号： G06F17/50 , H01L21/027 , G03F7/20
CPC分类号： G06F17/5068 , G03F7/70466 , G06F17/5081 , G06F2217/12 , H01L21/027 , H01L21/0274 , H01L2223/54426 , Y02P90/265
摘要： Provided are methods of forming patterns of wafers using self-aligned double patterning processes. The methods include preparing an initial layout having a first design pattern, a second design pattern, and a third design pattern disposed between the first design pattern and the second design pattern, extracting a first sub-layout including the first design pattern and a second sub-layout including the second design pattern from the initial layout using a computer, forming a first modified sub-layout including a first modified design pattern obtained by modifying the first design pattern of the first sub-layout using the computer, generating a modified layout including the first modified sub-layout and the second sub-layout using the computer, and performing a double patterning process using the modified layout.
摘要翻译： 提供了使用自对准双图案化工艺形成晶片图案的方法。 所述方法包括准备具有第一设计图案，第二设计图案和布置在第一设计图案和第二设计图案之间的第三设计图案的初始布局，提取包括第一设计图案的第一子布局和第二子图 - 使用计算机从初始布局中包括第二设计图案，形成包括通过使用计算机修改第一子布局的第一设计图案而获得的第一修改的设计图案的第一修改子布局，生成包括 使用所述计算机的所述第一修改子布局和所述第二子布局，以及使用所述修改的布局来执行双重图案化处理。
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2.发明授权Method of forming a photomask layout using optical proximity correction to compensate for a three-dimensional mask effect 失效使用光学邻近校正形成光掩模布局以补偿三维掩模效应的方法公开(公告)号：US08510684B2
公开(公告)日：2013-08-13
申请号：US13327379
申请日：2011-12-15
申请人： Moon-Gyu Jeong , Seong-Woon Choi , Jung Hoon Ser
发明人： Moon-Gyu Jeong , Seong-Woon Choi , Jung Hoon Ser
CPC分类号： G03F1/36 , G03F1/70 , G06F17/5081
摘要： A method of forming a layout of a photomask includes receiving a layout of a mask pattern, obtaining image parameters of a two-dimensional (2D) layout mask from a simulation, obtaining image parameters of a three-dimensional (3D) layout mask from a simulation, and obtaining differences between the image parameters of the 2D and 3D masks. The differences between the image parameters of the 2D and 3D masks can be compensated by convolving a probability function with respect to an open area, represented by a visible kernel function, with a mask function to produce a first function, convolving a probability function with respect to a blocked area, represented by a visible kernel function, with the mask function to produce a second function, and summing the first function and the second function to produce a compensated vector. The layout of the mask pattern can be corrected using the compensated vector.
摘要翻译： 形成光掩模布局的方法包括接收掩模图案的布局，从模拟中获得二维（2D）布局掩模的图像参数，从三维（3D）布局掩模的图像参数获得 模拟，并获得2D和3D蒙版的图像参数之间的差异。 2D和3D掩模的图像参数之间的差异可以通过将关于由可见核函数表示的开放区域的概率函数与掩模函数相乘以产生第一函数来进行补偿，将概率函数相对于 到由可见核函数表示的阻塞区域，具有掩模函数以产生第二函数，并且对第一函数和第二函数求和以产生补偿向量。 可以使用补偿矢量校正掩模图案的布局。
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公开(公告)号：US08677288B2
公开(公告)日：2014-03-18
申请号：US13594492
申请日：2012-08-24
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A block management method for OPC model calibration includes calculating differences in several different optical functions between first patterns of a first mask and patterns of a second mask corresponding to the first patterns but differing therefrom by a predetermined bias, selecting one or more of the optical functions based on the calculated differences, clustering data of variations in the values of the calculated differences in the selected ones of the optical functions, selecting respective ones of the first patterns in consideration of how the data clusters, and designating the selected first patterns as test patterns.
摘要翻译： 用于OPC模型校准的块管理方法包括：计算第一掩模的第一图案与对应于第一图案但与之不同的第二掩模的图案之间的若干不同光学功能的差异，并且通过预定偏置不同，选择光学功能中的一个或多个 基于所计算出的差异，对所选择的光学功能中计算出的差异的值的变化进行聚类数据，考虑数据簇的选择并选择所选择的第一图案作为测试图案 。
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4.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING UNIFORM OPTICAL PROXIMITY CORRECTION 有权使用均匀光学近似校正制造半导体器件的方法公开(公告)号：US20110265048A1
公开(公告)日：2011-10-27
申请号：US13084143
申请日：2011-04-11
申请人： Sang-wook KIM , Chun-suk SUH , Seong-woon CHOI , Jung-hoon SER , Moon-gyu JEONG , Seong-bo SHIM
发明人： Sang-wook KIM , Chun-suk SUH , Seong-woon CHOI , Jung-hoon SER , Moon-gyu JEONG , Seong-bo SHIM
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F2217/12 , Y02P90/265
摘要： A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.
摘要翻译： 一种制造半导体器件的方法包括将设计图案布局划分为重复图案部分和非重复图案部分，从提取部分获得光学邻近校正（OPC）偏压，提取部分是重复的部分部分 将从所提取的部分获得的OPC偏差平均地应用于提取部分和重复图案部分的其他部分，以便形成第一校正布局，其中其他部分的校正布局与提取部分的校正布局相同 并且根据第一校正布局在重复图案部分的所有部分中形成光掩模。
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5.发明申请Methods of Patterning Wafers Using Self-Aligned Double Patterning Processes 有权使用自对准双重图案化方法对晶片进行图案化的方法公开(公告)号：US20150193570A1
公开(公告)日：2015-07-09
申请号：US14336155
申请日：2014-07-21
申请人： Moon-Gyu Jeong
发明人： Moon-Gyu Jeong
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F7/70466 , G06F17/5081 , G06F2217/12 , H01L21/027 , H01L21/0274 , H01L2223/54426 , Y02P90/265
摘要： Provided are methods of forming patterns of wafers using self-aligned double patterning processes. The methods include preparing an initial layout having a first design pattern, a second design pattern, and a third design pattern disposed between the first design pattern and the second design pattern, extracting a first sub-layout including the first design pattern and a second sub-layout including the second design pattern from the initial layout using a computer, forming a first modified sub-layout including a first modified design pattern obtained by modifying the first design pattern of the first sub-layout using the computer, generating a modified layout including the first modified sub-layout and the second sub-layout using the computer, and performing a double patterning process using the modified layout.
摘要翻译： 提供了使用自对准双图案化工艺形成晶片图案的方法。 所述方法包括准备具有第一设计图案，第二设计图案和布置在第一设计图案和第二设计图案之间的第三设计图案的初始布局，提取包括第一设计图案的第一子布局和第二子图 - 使用计算机从初始布局中包括第二设计图案，形成包括通过使用计算机修改第一子布局的第一设计图案而获得的第一修改的设计图案的第一修改子布局，生成包括 使用所述计算机的所述第一修改子布局和所述第二子布局，以及使用所述修改的布局来执行双重图案化处理。
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公开(公告)号：US20130175240A1
公开(公告)日：2013-07-11
申请号：US13594492
申请日：2012-08-24
CPC分类号： G03F1/36
摘要： A block management method for OPC model calibration includes calculating differences in several different optical functions between first patterns of a first mask and patterns of a second mask corresponding to the first patterns but differing therefrom by a predetermined bias, selecting one or more of the optical functions based on the calculated differences, clustering data of variations in the values of the calculated differences in the selected ones of the optical functions, selecting respective ones of the first patterns in consideration of how the data clusters, and designating the selected first patterns as test patterns.
摘要翻译： 用于OPC模型校准的块管理方法包括：计算第一掩模的第一图案与对应于第一图案但与之不同的第二掩模的图案之间的若干不同光学功能的差异，并且通过预定偏置不同，选择光学功能中的一个或多个 基于所计算出的差异，对所选择的光学功能中计算出的差异的值的变化进行聚类数据，考虑数据簇的选择并选择所选择的第一图案作为测试图案 。
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公开(公告)号：US20120221982A1
公开(公告)日：2012-08-30
申请号：US13327379
申请日：2011-12-15
申请人： MOON-GYU JEONG , SEONG-WOON CHOI , JUNG HOON SER
发明人： MOON-GYU JEONG , SEONG-WOON CHOI , JUNG HOON SER
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70 , G06F17/5081
摘要： A method of forming a layout of a photomask using optical proximity correction (OPC) includes: receiving a layout of a mask pattern; obtaining image parameters of a two-dimensional (2D) layout mask from a simulation; obtaining image parameters of a three-dimensional (3D) layout mask from a simulation; obtaining differences between the image parameters of the 2D and 3D masks; and performing optical proximity correction (OPC) on the 2D mask to compensate for the differences between the image parameters of the 2D and 3D masks by using a visible kernel with respect to the 2D mask.
摘要翻译： 使用光学邻近校正（OPC）形成光掩模的布局的方法包括：接收掩模图案的布局; 从模拟获得二维（2D）布局掩模的图像参数; 从模拟中获得三维（3D）布局蒙版的图像参数; 获得2D和3D掩模的图像参数之间的差异; 以及在2D掩模上执行光学邻近校正（OPC），以通过使用相对于2D掩模的可见内核来补偿2D和3D掩模的图像参数之间的差异。
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8.发明授权Method of manufacturing semiconductor device by using uniform optical proximity correction 有权通过使用均匀光学邻近校正来制造半导体器件的方法公开(公告)号：US08392854B2
公开(公告)日：2013-03-05
申请号：US13084143
申请日：2011-04-11
申请人： Sang-wook Kim , Chun-suk Suh , Seong-woon Choi , Jung-hoon Ser , Moon-gyu Jeong , Seong-bo Shim
发明人： Sang-wook Kim , Chun-suk Suh , Seong-woon Choi , Jung-hoon Ser , Moon-gyu Jeong , Seong-bo Shim
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F2217/12 , Y02P90/265
摘要： A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.
摘要翻译： 一种制造半导体器件的方法包括将设计图案布局划分为重复图案部分和非重复图案部分，从提取部分获得光学邻近校正（OPC）偏压，提取部分是重复的部分部分 将从所提取的部分获得的OPC偏差平均地应用于提取部分和重复图案部分的其他部分，以便形成第一校正布局，其中其他部分的校正布局与提取部分的校正布局相同 并且根据第一校正布局在重复图案部分的所有部分中形成光掩模。
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