公开(公告)号：US06445004B1

公开(公告)日：2002-09-03

申请号：US09617311

申请日：2000-07-14

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

公开(公告)号：US07362402B2

公开(公告)日：2008-04-22

申请号：US11625435

申请日：2007-01-22

申请人： Myung-Koo Hur ,  Chang-Oh Jeong

发明人： Myung-Koo Hur ,  Chang-Oh Jeong

IPC分类号： G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

摘要： A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum alloy, and another layer one of either a molybdenum nitride or molybdenum alloy nitride by using reactive sputtering method are deposited in sequence, and then patterned simultaneously. The target for reactive sputtering is made of either molybdenum or molybdenum alloy, and the molybdenum alloy comprises one selected from the group consisting of tungsten, chromium, zirconium, and nickel of the content ratio of 0.1 to less than 20 atm % of. The reactive gas mixture for reactive sputtering includes an argon gas and inflow amount of the nitrogen gas is at least 50% of argon gas, to minimize the etch rate of the molybdenum nitride layer or the molybdenum alloy nitride layer for ITO etchant.

摘要翻译： 用于液晶显示器的线具有包括由钼或钼合金制成的第一层和由氮化钼或钼合金氮化物制成的第二层的双层结构。 为了制造导线，依次沉积由钼或钼合金制成的层，以及通过使用反应溅射法的氮化钼或钼合金氮化物中的另一层，然后同时进行图案化。 反应溅射的目的是由钼或钼合金制成，钼合金包含选自钨，铬，锆和镍中的一种，其含量比例为0.1至小于20atm％。 用于反应溅射的反应性气体混合物包括氩气，并且氮气的流入量为氩气的至少50％，以最小化用于ITO蚀刻剂的氮化钼层或钼合金氮化物层的蚀刻速率。

公开(公告)号：US06337520B1

公开(公告)日：2002-01-08

申请号：US09031486

申请日：1998-02-26

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Chun-Gi You

IPC分类号： H01L2348

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHClF2, CH3F and C2F6 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金蚀刻剂或Cr蚀刻剂蚀刻以具有平滑的锥角，并且Mo或MoW层用于显示器或半导体的布线 装置以及Al层和Cr层。 由于可以通过调整沉积压力来沉积Mo或MoW层以对基底施加低应力，所以可以单个MoW层自身用作布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，蚀刻气体系统CF4 + O2可以防止Mo或MoW合金层的蚀刻，并且蚀刻气体SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当通过使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用蚀刻气体系统如卤化氢和选自CF 4，CHF 3，CHClF 2，CH 3 F 和C2F6产生TFT的良好特性，并且H2等离子体处理可以导致TFT的特性得到改善。

公开(公告)号：US07173683B2

公开(公告)日：2007-02-06

申请号：US09196185

申请日：1998-11-20

申请人： Myung-Koo Hur ,  Chang-Oh Jeong

发明人： Myung-Koo Hur ,  Chang-Oh Jeong

IPC分类号： G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

摘要： A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum alloy, and another layer one of either a molybdenum nitride or molybdenum alloy nitride by using reactive sputtering method are deposited in sequence, and then patterned simultaneously. The target for reactive sputtering is made of either molybdenum or molybdenum alloy, and the molybdenum alloy comprises one selected from the group consisting of tungsten, chromium, zirconium, and nickel of the content ratio of 0.1 to less than 20 atm % of. The reactive gas mixture for reactive sputtering includes an argon gas and inflow amount of the nitrogen gas is at least 50% of argon gas, to minimize the etch rate of the molybdenum nitride layer or the molybdenum alloy nitride layer for ITO etchant.

摘要翻译： 用于液晶显示器的线具有包括由钼或钼合金制成的第一层和由氮化钼或钼合金氮化物制成的第二层的双层结构。 为了制造导线，依次沉积由钼或钼合金制成的层，以及通过使用反应溅射法的氮化钼或钼合金氮化物中的另一层，然后同时进行图案化。 反应溅射的目的是由钼或钼合金制成，钼合金包含选自钨，铬，锆和镍中的一种，其含量比例为0.1至小于20atm％。 用于反应溅射的反应性气体混合物包括氩气，并且氮气的流入量为氩气的至少50％，以最小化用于ITO蚀刻剂的氮化钼层或钼合金氮化物层的蚀刻速率。

公开(公告)号：US06686606B2

公开(公告)日：2004-02-03

申请号：US10389778

申请日：2003-03-18

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chua-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chua-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

公开(公告)号：US06582982B2

公开(公告)日：2003-06-24

申请号：US09962210

申请日：2001-09-26

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2100

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

公开(公告)号：US06486494B2

公开(公告)日：2002-11-26

申请号：US10035245

申请日：2002-01-04

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L2904

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with An Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金附魔或Cr附魔被蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 + O 2的蚀刻气体系统可以防止Mo或MoW合金层的蚀刻，以及蚀刻气体 SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢和至少一种选自CF 4，CHF 3的气体的气体的蚀刻气体系统， CHClF 2，CH 3 F和C 2 F 6，产生良好的TFT特性，并且H 2等离子体处理可以进一步提高TFT特性。

公开(公告)号：US06380098B1

公开(公告)日：2002-04-30

申请号：US09492830

申请日：2000-01-27

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： H01L21302

CPC分类号： G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF4, CHF3, CHClF2, CH3F and C2F6 yield the good characteristics of TFT, and H2 plasma treatment can cause the characteristics of the TFT to be improved.

摘要翻译： Mo或MoW组合物层具有小于15μOMEGAcm的低电阻率，并且使用Al合金蚀刻剂或Cr蚀刻剂蚀刻以具有平滑的锥角，并且Mo或MoW层用于显示器或半导体的布线 装置以及Al层和Cr层。 由于可以通过调整沉积压力来沉积Mo或MoW层以对基底施加低应力，所以可以单个MoW层自身用作布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，蚀刻气体系统CF4 + O2可以防止Mo或MoW合金层的蚀刻，并且蚀刻气体SF6 + HCl（+ He）或SF6 + Cl2（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当通过使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用蚀刻气体系统如卤化氢和选自CF 4，CHF 3，CHClF 2，CH 3 F 和C2F6产生TFT的良好特性，并且H2等离子体处理可以导致TFT的特性得到改善。

公开(公告)号：US20070114531A1

公开(公告)日：2007-05-24

申请号：US11625435

申请日：2007-01-22

申请人： Myung-Koo Hur ,  Chang-Oh Jeong

发明人： Myung-Koo Hur ,  Chang-Oh Jeong

IPC分类号： H01L29/04

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

摘要： A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum alloy, and another layer one of either a molybdenum nitride or molybdenum alloy nitride by using reactive sputtering method are deposited in sequence, and then patterned simultaneously. The target for reactive sputtering is made of either molybdenum or molybdenum alloy, and the molybdenum alloy comprises one selected from the group consisting of tungsten, chromium, zirconium, and nickel of the content ratio of 0.1 to less than 20 atm % of. The reactive gas mixture for reactive sputtering includes an argon gas and inflow amount of the nitrogen gas is at least 50% of argon gas, to minimize the etch rate of the molybdenum nitride layer or the molybdenum alloy nitride layer for ITO etchant.

摘要翻译： 用于液晶显示器的线具有包括由钼或钼合金制成的第一层和由氮化钼或钼合金氮化物制成的第二层的双层结构。 为了制造导线，依次沉积由钼或钼合金制成的层，以及通过使用反应溅射法的氮化钼或钼合金氮化物中的另一层，然后同时进行图案化。 反应溅射的目的是由钼或钼合金制成，钼合金包含选自钨，铬，锆和镍中的一种，其含量比例为0.1至小于20atm％。 用于反应溅射的反应性气体混合物包括氩气，并且氮气的流入量为氩气的至少50％，以最小化用于ITO蚀刻剂的氮化钼层或钼合金氮化物层的蚀刻速率。

公开(公告)号：US06946681B2

公开(公告)日：2005-09-20

申请号：US10732480

申请日：2003-12-11

申请人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

发明人： Chang-Oh Jeong ,  Yang-Sun Kim ,  Myung-Koo Hur ,  Young-Jae Tak ,  Mun-Pyo Hong ,  Chi-Woo Kim ,  Jang-Soo Kim ,  Chun-Gi You

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L23/482 ,  H01L29/423 ,  H01L29/49 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376

CPC分类号： G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L23/4827 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF6+HCl (+He) or SF6+Cl2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF4, CHF3, CHClF2, CH3F, and C2F6, yields good TFT characteristics, and H2 plasma treatment can further improve the TFT characteristics.

摘要翻译： Mo或MoW组合物层具有小于15μOggacm的低电阻率，并且使用Al合金附魔或Cr附魔蚀刻成具有平滑的锥角，并且Mo或MoW层用于显示器或 半导体显示器以及Al层或Cr层。 由于通过调节沉积压力可以沉积Mo或MoW层以便对基底施加低应力，所以可以单独使用单个MoW层作为布线。 当在钝化层或栅极绝缘层中形成接触孔时，通过使用聚合物层减少横向蚀刻，使用CF 4 O 2 O 2的蚀刻气体系统 防止Mo或MoW合金层的蚀刻，以及SF 6+ + HCl（+ He）或SF 6 + Cl 2 2的蚀刻气体 >（+ He）可以形成要平滑的接触孔的边缘轮廓。 此外，当使用Mo或MoW层作为掩模蚀刻形成在Mo或MoW层下面的非晶硅层时，使用采用诸如卤化氢的气体和选自以下的至少一种气体的蚀刻气体系统： 4，CHF 3，CHClF 2，CH 3，F和C 2 _{6 ，产生良好的TFT特性，H 2等离子体处理可进一步提高TFT特性。}