摘要:
The disclosure is directed to a process for depositing a group V metal containing film on a substrate by introducing a substrate into a reactor; preferably heating the substrate at a temperature above 150° C.; feeding a compound of the formula (Ia) or of the formula (Ib), or a mixture of said compounds thereof in the vapor phase into the reactor; optionally feeding a second compound of the formula (Ia) or of the formula (Ib), or a second mixture of said compounds thereof in vapor phase into the reactor; and thereby depositing the group V metal containing film onto said substrate.
摘要:
The invention relates to a solid metal compound comprising (i) a solid support comprising aluminium oxide, (ii) at least one first metal compound (C1) selected from metal hydrides, organometallic compounds and organometallic hydrides, and comprising a metal (M1) selected from the lanthanides, the actinides and the metals of Groups 4 to 7 of the Periodic Table of the Elements, and (iii) at least one second metal compound (C2) comprising a metal (M2) selected from the metals of Groups 8 to 10 of said Table. The compounds (C1) and (C2) are preferably supported on, particularly grafted onto the solid support. The invention also relates to processes for preparing the solid metal compound, preferably comprising stage (1) comprising dispersing and preferably grafting (i) an organometallic precursor (Pr1) comprising the metal (M1) and (ii) a precursor (Pr2) comprising the metal (M2) onto the support, so as to produce the solid metal compound, and preferably stage (2) comprising contacting the solid metal compound thus obtained with hydrogen and/or a reducing agent. The invention also relates to the use of the solid metal compound in processes comprising hydrocarbon reactions optionally in the presence of hydrogen, and preferably involving the splitting and recombining of carbon-carbon and/or carbon-hydrogen and/or carbon-metal bonds, so as to produce final hydrocarbons different from the starting ones. The solid metal compound can be used in processes comprising alkane and/or alkene metathesis, non-oxidative methane coupling, alkene oligomerisation, methane-olysis of hydrocarbons, cross-metathesis and hydrogenolysis of hydrocarbons, e.g. saturated hydrocarbons, hydrocarbon polymers/oligomers or waxes, in the presence of hydrogen.
摘要:
Compound of the formula (Ia), or of the formula (Ib). These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes and/or high k layers, and/or copper diffusion barrier layers, etc.