Use of group V metal containing precursors for a process of depositing a metal containing film
    2.
    发明授权
    Use of group V metal containing precursors for a process of depositing a metal containing film 有权
    使用含V族金属的前体作为沉积含金属膜的方法

    公开(公告)号:US08470401B2

    公开(公告)日:2013-06-25

    申请号:US12447237

    申请日:2007-10-19

    IPC分类号: C23C16/06 C23C16/40

    CPC分类号: C07F17/00

    摘要: The disclosure is directed to a process for depositing a group V metal containing film on a substrate by introducing a substrate into a reactor; preferably heating the substrate at a temperature above 150° C.; feeding a compound of the formula (Ia) or of the formula (Ib), or a mixture of said compounds thereof in the vapor phase into the reactor; optionally feeding a second compound of the formula (Ia) or of the formula (Ib), or a second mixture of said compounds thereof in vapor phase into the reactor; and thereby depositing the group V metal containing film onto said substrate.

    摘要翻译: 本发明涉及一种通过将衬底引入反应器中将含V族金属的膜沉积在衬底上的方法; 优选在高于150℃的温度下加热基底; 将式(Ia)或式(Ib)化合物或其气相中的所述化合物的混合物进料到反应器中; 任选地将式(Ia)或式(Ib)的第二化合物或其所述化合物的第二混合物气相加入到反应器中; 从而将含V族金属的膜沉积在所述基板上。

    SOLID METAL COMPOUND, PREPARATIONS AND USES THEREOF
    3.
    发明申请
    SOLID METAL COMPOUND, PREPARATIONS AND USES THEREOF 审中-公开
    固体金属化合物,其制备及其用途

    公开(公告)号:US20100197482A1

    公开(公告)日:2010-08-05

    申请号:US12733809

    申请日:2008-09-25

    IPC分类号: B01J31/12 B01J21/04

    摘要: The invention relates to a solid metal compound comprising (i) a solid support comprising aluminium oxide, (ii) at least one first metal compound (C1) selected from metal hydrides, organometallic compounds and organometallic hydrides, and comprising a metal (M1) selected from the lanthanides, the actinides and the metals of Groups 4 to 7 of the Periodic Table of the Elements, and (iii) at least one second metal compound (C2) comprising a metal (M2) selected from the metals of Groups 8 to 10 of said Table. The compounds (C1) and (C2) are preferably supported on, particularly grafted onto the solid support. The invention also relates to processes for preparing the solid metal compound, preferably comprising stage (1) comprising dispersing and preferably grafting (i) an organometallic precursor (Pr1) comprising the metal (M1) and (ii) a precursor (Pr2) comprising the metal (M2) onto the support, so as to produce the solid metal compound, and preferably stage (2) comprising contacting the solid metal compound thus obtained with hydrogen and/or a reducing agent. The invention also relates to the use of the solid metal compound in processes comprising hydrocarbon reactions optionally in the presence of hydrogen, and preferably involving the splitting and recombining of carbon-carbon and/or carbon-hydrogen and/or carbon-metal bonds, so as to produce final hydrocarbons different from the starting ones. The solid metal compound can be used in processes comprising alkane and/or alkene metathesis, non-oxidative methane coupling, alkene oligomerisation, methane-olysis of hydrocarbons, cross-metathesis and hydrogenolysis of hydrocarbons, e.g. saturated hydrocarbons, hydrocarbon polymers/oligomers or waxes, in the presence of hydrogen.

    摘要翻译: 本发明涉及一种固体金属化合物,其包含(i)包含氧化铝的固体载体,(ii)至少一种选自金属氢化物,有机金属化合物和有机金属氢化物的第一金属化合物(C1),并且包含选择的金属(M1) 镧系元素,元素周期表第4至7族中的锕系元素和金属,和(iii)至少一种第二金属化合物(C2),其包含选自第8〜10族金属的金属(M2) 的表。 化合物(C1)和(C2)优选负载在,特别是接枝到固体载体上。 本发明还涉及制备固体金属化合物的方法,优选包含阶段(1),其包括分散并优选接枝(i)包含金属(M1)的有机金属前体(Pr1)和(ii)包含 金属(M2),以制备固体金属化合物,并且优选包括将由此获得的固体金属化合物与氢气和/或还原剂接触的阶段(2)。 本发明还涉及固体金属化合物在任选地在氢气存在下包括烃反应的方法中的用途,并且优选涉及碳 - 碳和/或碳 - 氢和/或碳 - 金属键的分解和重组,因此 以生产与起始烃不同的最终烃。 固体金属化合物可用于包括烷烃和/或烯烃复分解,非氧化甲烷偶合,烯烃低聚,烃的甲烷溶解,烃的氢解,交叉复分解等过程。 饱和烃,烃聚合物/低聚物或蜡,在氢的存在下。