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26 条记录 (耗时 0.016 秒)

    Light sensor having reduced dark current
    1.
    发明授权
    Light sensor having reduced dark current 有权
    具有降低的暗电流的光传感器

    公开(公告)号：US08842946B1

    公开(公告)日：2014-09-23

    申请号：US13506071

    申请日：2012-03-26

    申请人： Shirong Liao ,  Cheng-Chih Kung ,  Dazeng Feng ,  Ning-Ning Feng ,  Yong Liu ,  Roshanak Shafiiha

    发明人： Shirong Liao ,  Cheng-Chih Kung ,  Dazeng Feng ,  Ning-Ning Feng ,  Yong Liu ,  Roshanak Shafiiha

    IPC分类号： G02B6/12

    CPC分类号： G02B6/136 ,  G02B2006/12097 ,  G02F2201/063

    摘要： The light sensor is included on an optical device having a waveguide on a base. The waveguide is configured to guide a light signal through a crystalline light-transmitting medium. The light sensor is also positioned on the base and is configured to receive the light signal from the waveguide. The light sensor includes a planar interface between two different materials. The interface is at a 45° angle relative to a direction of the light-transmitting medium.

    摘要翻译： 光传感器包括在具有在基底上的波导的光学装置上。 波导被配置为引导光信号通过晶体透光介质。 光传感器也位于基座上并被配置为从波导接收光信号。 光传感器包括两种不同材料之间的平面界面。 界面相对于透光介质的<110>方向成45°角。

    Ring resonator with wavelength selectivity
    2.
    发明授权
    Ring resonator with wavelength selectivity 有权
    具有波长选择性的环形谐振器

    公开(公告)号：US08897606B2

    公开(公告)日：2014-11-25

    申请号：US12928076

    申请日：2010-12-01

    申请人： Mehdi Asghari ,  Dazeng Feng ,  Po Dong ,  Roshanak Shafiiha ,  Shirong Liao ,  Ning-Ning Feng

    发明人： Mehdi Asghari ,  Dazeng Feng ,  Po Dong ,  Roshanak Shafiiha ,  Shirong Liao ,  Ning-Ning Feng

    IPC分类号： G02F1/225 ,  G02B6/26

    CPC分类号： G02F1/2257 ,  G02F2201/122 ,  G02F2203/15

    摘要： The ring resonator includes waveguides configured to guide light signals. The waveguides include an input waveguide and one or more loop waveguides. One of the loop waveguides is a primary loop waveguide that is optically coupled with the input waveguide at a wavelength of light. A tuner is configured to tune the wavelength at which the light is optically coupled from the input waveguide into the primary loop waveguide. One or more light detectors are each configured to provide an output indicating an intensity of light guided in one of the one or more loop waveguides. Electronics are configured to tune the tuner in response to the output from the light detector.

    摘要翻译： 环形谐振器包括被配置为引导光信号的波导。 波导包括输入波导和一个或多个环形波导。 环路波导之一是在波长为光的情况下与输入波导光耦合的主要环路波导。 调谐器被配置为调节光从输入波导光耦合到主环形波导中的波长。 一个或多个光检测器被配置为提供指示在一个或多个环形波导之一中引导的光的强度的输出。 电子设备被配置为响应于来自光检测器的输出来调谐调谐器。

    Method for adjusting link speed and computer system using the same
    3.
    发明授权
    Method for adjusting link speed and computer system using the same 有权
    调整链路速度的方法和使用该速度的计算机系统

    公开(公告)号：US08713230B2

    公开(公告)日：2014-04-29

    申请号：US13212194

    申请日：2011-08-18

    申请人： Kang-Ning Feng

    发明人： Kang-Ning Feng

    IPC分类号： G06F13/00

    CPC分类号： G06F13/4059 ,  G06F2213/0026

    摘要： A method for adjusting a link speed and a computer system using the same are provided. The method is used after executing a boot block code and before executing a bus enumeration procedure. A testing step is executed using a maximum link speed supported by both a bridge and a peripheral device. If the test fails, the link speed is adjusted down until the test succeeds, thus automatically adjusting the link speed of the bridge.

    摘要翻译： 提供了一种用于调整链接速度的方法和使用其的计算机系统。 该方法在执行引导块代码并在执行总线枚举过程之前使用。 使用由桥接器和外围设备支持的最大链路速度来执行测试步骤。 如果测试失败，则链路速度被调低直到测试成功，从而自动调整桥的链路速度。

    PHOTOCONDUCTORS FOR MID-/FAR-IR DETECTION
    6.
    发明申请
    PHOTOCONDUCTORS FOR MID-/FAR-IR DETECTION 有权
    用于中/红外检测的光电子器件

    公开(公告)号：US20100187530A1

    公开(公告)日：2010-07-29

    申请号：US12359513

    申请日：2009-01-26

    申请人： Juejun Hu ,  Ning-Ning Feng ,  Anuradha M. Agarwal ,  Lionel C. Kimerling

    发明人： Juejun Hu ,  Ning-Ning Feng ,  Anuradha M. Agarwal ,  Lionel C. Kimerling

    IPC分类号： H01L29/12 ,  H01L21/06

    CPC分类号： H01L31/109 ,  H01L31/032

    摘要： An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions.

    摘要翻译： 提供红外光电二极管结构。 红外光电二极管结构包括具有一定导电性离子的掺杂半导体层。 有源光电检测区位于掺杂半导体层上，用于检测红外光信号。 有源光电检测区域包括一个或多个非晶半导体材料，以便在黑暗和照明条件下通过调用载波跳变和带通导致高的信噪比。

    System having avalanche effect light sensor with enhanced sensitivity
    8.
    发明授权
    System having avalanche effect light sensor with enhanced sensitivity 有权
    具有雪崩效应光传感器的系统具有增强的灵敏度

    公开(公告)号：US08639065B2

    公开(公告)日：2014-01-28

    申请号：US12803136

    申请日：2010-06-18

    申请人： Ning-Ning Feng ,  Shirong Liao ,  Dawei Zheng ,  Dazeng Feng

    发明人： Ning-Ning Feng ,  Shirong Liao ,  Dawei Zheng ,  Dazeng Feng

    IPC分类号： G02B6/13

    CPC分类号： H01L31/1075

    摘要： The system includes a light-transmitting medium positioned on a base. The light-transmitting medium included a ridge and a slab region. The ridge extends upward from the slab region and defines a portion of a waveguide on the base. The waveguide is configured to guide a light signal through the device. The device also includes an avalanche effect light sensor positioned on the base and configured to detect the presence of the light signal. The light sensor includes a light-absorbing medium positioned on the ridge of the light-transmitting medium such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium. The light-transmitting includes a charge layer located at an interface of the light-transmitting medium and the light-absorbing medium. A multiplication region is formed in the slab regions of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during the operation of the light sensor.

    摘要翻译： 该系统包括位于基座上的透光介质。 透光介质包括脊和板区域。 脊从板坯区域向上延伸，并且在基座上限定波导的一部分。 波导被配置为引导光信号穿过该装置。 该装置还包括位于基座上并被配置为检测光信号的存在的雪崩效应光传感器。 光传感器包括位于透光介质的脊上的光吸收介质，使得光信号从光传输介质耦合到光吸收介质中。 光透射包括位于透光介质和光吸收介质的界面处的电荷层。 在光传输介质的平板区域中形成乘法区域，使得倍增区域在光传感器的操作期间从电荷层接收电荷载流子。

    Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices
    10.
    发明申请
    Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices 有权
    使用CMOS兼容激光器件的多个低折射率纳米层配置的光场集中器

    公开(公告)号：US20070248308A1

    公开(公告)日：2007-10-25

    申请号：US11410228

    申请日：2006-04-24

    申请人： Ning-Ning Feng ,  Jurgen Michel ,  Lionel Kimerling

    发明人： Ning-Ning Feng ,  Jurgen Michel ,  Lionel Kimerling

    IPC分类号： G02B6/10

    CPC分类号： G02B6/107 ,  B82Y20/00 ,  G02B6/0229 ,  G02B6/03611 ,  G02B6/03644 ,  G02B6/03688 ,  G02B6/1223

    摘要： An optical field concentrator includes a plurality of waveguide layers comprising high index materials having a first defined thickness. At least one nano-layer structure is positioned between said waveguide layers. The at least one nano-layer structure comprises low index materials having a second defined thickness that is smaller than the first defined thickness. A plurality of cladding layers are positioned between the waveguide layers and the at least one nano-layer structure. The cladding layers have a third defined thickness that is larger than the first defined thickness.

    摘要翻译： 光场集中器包括多个波导层，其包括具有第一限定厚度的高折射率材料。 至少一个纳米层结构位于所述波导层之间。 所述至少一个纳米层结构包括具有小于所述第一限定厚度的第二限定厚度的低折射率材料。 多个包层位于波导层和至少一个纳米层结构之间。 包覆层具有大于第一限定厚度的第三限定厚度。