利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

66 条记录 (耗时 0.024 秒)

    Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices
    3.
    发明授权
    Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices 有权
    使用CMOS兼容激光器件的多个低折射率纳米层配置的光场集中器

    公开(公告)号：US07352942B2

    公开(公告)日：2008-04-01

    申请号：US11410228

    申请日：2006-04-24

    申请人： Ning-Ning Feng ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Ning-Ning Feng ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： G02B6/10 ,  H01L21/00

    CPC分类号： G02B6/107 ,  B82Y20/00 ,  G02B6/0229 ,  G02B6/03611 ,  G02B6/03644 ,  G02B6/03688 ,  G02B6/1223

    摘要： An optical field concentrator includes a plurality of waveguide layers comprising high index materials having a first defined thickness. At least one nano-layer structure is positioned between said waveguide layers. The at least one nano-layer structure comprises low index materials having a second defined thickness that is smaller than the first defined thickness. A plurality of cladding layers are positioned between the waveguide layers and the at least one nano-layer structure. The cladding layers have a third defined thickness that is larger than the first defined thickness.

    摘要翻译： 光场集中器包括多个波导层，其包括具有第一限定厚度的高折射率材料。 至少一个纳米层结构位于所述波导层之间。 所述至少一个纳米层结构包括具有小于所述第一限定厚度的第二限定厚度的低折射率材料。 多个包层位于波导层和至少一个纳米层结构之间。 包覆层具有大于第一限定厚度的第三限定厚度。

    Photodetector and manufacturing method thereof
    5.
    发明授权
    Photodetector and manufacturing method thereof 有权
    光电检测器及其制造方法

    公开(公告)号：US08022494B2

    公开(公告)日：2011-09-20

    申请号：US11700043

    申请日：2007-01-31

    申请人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： H01L31/075 ,  H01L31/07

    CPC分类号： H01L31/103 ,  H01L31/1085 ,  H01L31/109

    摘要： A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.

    摘要翻译： 具有改善的响应速度的横向光电二极管包括具有有源区的半导体衬底以及平行于衬底的表面布置的p型区和n型区。 有源区分别是n层和p层，并且在衬底的厚度方向上层叠以形成p-n结。 此外，用于防止载体从衬底向有源区移动的阻挡层设置在有源区的一侧朝向衬底。

    Photodetector and manufacturing method thereof
    7.
    发明申请
    Photodetector and manufacturing method thereof 有权
    光电检测器及其制造方法

    公开(公告)号：US20080179700A1

    公开(公告)日：2008-07-31

    申请号：US11700043

    申请日：2007-01-31

    申请人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/103 ,  H01L31/1085 ,  H01L31/109

    摘要： A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.

    摘要翻译： 具有改善的响应速度的横向光电二极管包括具有有源区的半导体衬底以及平行于衬底的表面布置的p型区和n型区。 有源区分别是n层和p层，并且在衬底的厚度方向上层叠以形成p-n结。 此外，用于防止载体从衬底向有源区移动的阻挡层设置在有源区的一侧朝向衬底。

    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES
    9.
    发明申请
    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES 有权
    在激光和发光器件中的工程辐射波长

    公开(公告)号：US20110316018A1

    公开(公告)日：2011-12-29

    申请号：US12821643

    申请日：2010-06-23

    申请人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    发明人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    IPC分类号： H01L33/02 ,  H01L33/00

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3403 ,  H01S5/34333

    摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

    摘要翻译： 提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

    Photodiode
    10.
    发明授权
    Photodiode 有权
    光电二极管

    公开(公告)号：US07659627B2

    公开(公告)日：2010-02-09

    申请号：US11950795

    申请日：2007-12-05

    申请人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： H01L29/41

    CPC分类号： H01L27/1446 ,  H01L31/022408 ,  H01L31/085

    摘要： A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.

    摘要翻译： 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底，形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指，并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里，不透明电极的宽度被设定为小于透明电极的宽度。