公开(公告)号：US07297990B1

公开(公告)日：2007-11-20

申请号：US10903442

申请日：2004-07-30

申请人： Paul R. Berger ,  Phillip E. Thompson ,  Niu Jin

发明人： Paul R. Berger ,  Phillip E. Thompson ,  Niu Jin

IPC分类号： H01L29/00

CPC分类号： H01L29/885

摘要： A silicon-based interband tunneling diode (10, 110) includes a degenerate p-type doping (22, 130) of acceptors, a degenerate n-type doping (32, 118) of donors disposed on a first side of the degenerate p-type doping (22, 130), and a barrier silicon-germanium layer (20, 136) disposed on a second side of the degenerate p-type doping (22, 130) opposite the first side. The barrier silicon-germanium layer (20, 136) suppresses diffusion of acceptors away from a p/n junction defined by the degenerate p-type and n-type dopings (22, 32, 118, 130).

摘要翻译： 基于硅的带间隧穿二极管（10,110）包括简并p型掺杂（22,130）的受体，退化的n型掺杂（32,118）的供体设置在退化p- 型掺杂（22,130）和位于与第一侧相对的简并p型掺杂（22,130）的第二侧上的势垒硅 - 锗层（20,136）。 阻挡硅 - 锗层（20,136）抑制受体的扩散远离由简并p型和n型掺杂（22,32，118,130）限定的p / n结。

公开(公告)号：US20060284165A1

公开(公告)日：2006-12-21

申请号：US11407120

申请日：2006-04-19

申请人： Paul Berger ,  Niu Jin ,  Phillip Thompson ,  Sung-Yong Chung

发明人： Paul Berger ,  Niu Jin ,  Phillip Thompson ,  Sung-Yong Chung

IPC分类号： H01L29/06

CPC分类号： H01L29/365 ,  H01L29/8618

摘要： A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (16, 16′, 160, 161). In some embodiments, at least one delta doping (30, 32) is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes (10, 10′, 100).

摘要翻译： 通过在硅衬底上外延沉积Si基二极管结构来形成Si基二极管（10,10'，100）。 Si基二极管结构包括具有反向二极管电流 - 电压特性的Si基pn结（16,16'，18,18'，30,32,160,161），其中正向隧穿电流基本上小于 反向隧道电流在相当的电压水平。 在一些实施例中，Si基pn结包括至少一个非硅或硅合金层，例如至少一个SiGe层（16,16'，160,161）。 在一些实施例中，至少一个δ掺杂（30,32）设置在pn结中或其附近的硅衬底上，与Si基pn结一起限定具有后向二极管电流 - 电压特性的电连接。 大面积检测器阵列可以包括多个这样的Si基二极管（10,10'，100）。

公开(公告)号：US20090020748A1

公开(公告)日：2009-01-22

申请号：US12175114

申请日：2008-07-17

申请人： Niu JIN ,  Paul R. Berger ,  Phillip E. Thompson

发明人： Niu JIN ,  Paul R. Berger ,  Phillip E. Thompson

IPC分类号： H01L29/15 ,  H01L21/203

CPC分类号： H01L29/88 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L29/161 ,  H01L29/165 ,  H01L29/882 ,  Y10S438/979

摘要： Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current. Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current.

摘要翻译： 一些公开的带间隧道二极管包括多个基本上相干应变的层，包括选自硅，锗以及硅和锗的合金的层，其中所述基本上相干应变层中的至少一个是拉伸的。 一些公开的谐振频带隧道二极管包括多个基本上相干应变的层，包括选自硅，锗以及硅和锗的合金的层，其中所述基本上相干应变层中的至少一个限定非谐振的势垒 隧道电流。 一些公开的带间隧道二极管包括多个基本上相干应变的层，其中所述基本上相干应变层中的至少一个是拉伸应变的。 一些公开的谐振频带隧道二极管包括多个基本上相干应变的层，其中至少一个所述基本上相干应变的层限定非谐振隧道电流的阻挡。

公开(公告)号：US07902569B2

公开(公告)日：2011-03-08

申请号：US12175114

申请日：2008-07-17

申请人： Niu Jin ,  Paul R. Berger ,  Philip E. Thompson

发明人： Niu Jin ,  Paul R. Berger ,  Philip E. Thompson

IPC分类号： H01L29/88 ,  H01L21/329

CPC分类号： H01L29/88 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L29/161 ,  H01L29/165 ,  H01L29/882 ,  Y10S438/979

摘要： Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current. Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current.

摘要翻译： 一些公开的带间隧道二极管包括多个基本上相干应变的层，包括选自硅，锗以及硅和锗的合金的层，其中所述基本上相干应变层中的至少一个是拉伸的。 一些公开的谐振频带隧道二极管包括多个基本上相干应变的层，包括选自硅，锗以及硅和锗的合金的层，其中所述基本上相干应变层中的至少一个限定非谐振的势垒 隧道电流。 一些公开的带间隧道二极管包括多个基本上相干应变的层，其中所述基本上相干应变层中的至少一个是拉伸应变的。 一些公开的谐振频带隧道二极管包括多个基本上相干应变的层，其中至少一个所述基本上相干应变的层限定非谐振隧道电流的阻挡。

公开(公告)号：US07361943B2

公开(公告)日：2008-04-22

申请号：US11407120

申请日：2006-04-19

申请人： Paul R. Berger ,  Niu Jin ,  Phillip E. Thompson ,  Sung-Yong Chung

发明人： Paul R. Berger ,  Niu Jin ,  Phillip E. Thompson ,  Sung-Yong Chung

IPC分类号： H01L29/88

CPC分类号： H01L29/365 ,  H01L29/8618

摘要： A Si-based diode (10, 10′, 100) is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction (16, 16′, 18, 18′, 30, 32, 160, 161) having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (16, 16′, 160, 161). In some embodiments, at least one delta doping (30, 32) is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes (10, 10′, 100).

摘要翻译： 通过在硅衬底上外延沉积Si基二极管结构来形成Si基二极管（10,10'，100）。 Si基二极管结构包括具有反向二极管电流 - 电压特性的Si基pn结（16,16'，18,18'，30,32,160,161），其中正向隧穿电流基本上小于 反向隧道电流在相当的电压水平。 在一些实施例中，Si基pn结包括至少一个非硅或硅合金层，例如至少一个SiGe层（16,16'，160,161）。 在一些实施例中，至少一个δ掺杂（30,32）设置在pn结中或其附近的硅衬底上，与Si基pn结一起限定具有后向二极管电流 - 电压特性的电连接。 大面积检测器阵列可以包括多个这样的Si基二极管（10,10'，100）。