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    Photoelectric conversion device
    3.
    发明授权
    Photoelectric conversion device 失效

    公开(公告)号：US06620997B2

    公开(公告)日：2003-09-16

    申请号：US10046017

    申请日：2001-10-29

    申请人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune ,  Nobuyuki Kitahara

    发明人： Takeshi Kyoda ,  Shin Sugawara ,  Hisao Arimune ,  Nobuyuki Kitahara

    IPC分类号： H01L310352

    CPC分类号： H01L31/035281 ,  H01L31/022425 ,  H01L31/03529 ,  Y02E10/50

    摘要： In a photoelectric conversion device having numerous crystalline semiconductor grains deposited on a substrate, the substrate includes an aluminum layer or an aluminum alloy layer, an intermediate layer, and a base material layer, in which the intermediate layer is arranged such that it is composed mainly of one or a plurality of elements selected from among nickel, titanium, chromium, and cobalt. With the constitution as above, it is possible to suppress reaction between the aluminum electrode layer and the base material layer, thereby maintaining the high adhesiveness of the aluminum electrode layer. A photoelectric conversion device with high reliability and high conversion efficiency is therefore realized.

    Method for manufacturing granular silicon crystal
    4.
    发明申请
    Method for manufacturing granular silicon crystal 失效
    颗粒状硅晶体的制造方法

    公开(公告)号：US20060213427A1

    公开(公告)日：2006-09-28

    申请号：US11387624

    申请日：2006-03-22

    申请人： Shin Sugawara ,  Eigo Takahashi ,  Nobuyuki Kitahara ,  Yoshio Miura ,  Hisao Arimune

    发明人： Shin Sugawara ,  Eigo Takahashi ,  Nobuyuki Kitahara ,  Yoshio Miura ,  Hisao Arimune

    IPC分类号： C30B11/00 ,  C30B17/00 ,  C30B9/00 ,  C30B21/02 ,  C30B28/06

    CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B29/36 ,  C30B29/38 ,  C30B29/607 ,  Y10T117/1056

    摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.

    摘要翻译： 在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源 当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。 因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。

    Method for manufacturing granular silicon crystal
    6.
    发明授权
    Method for manufacturing granular silicon crystal 失效
    颗粒状硅晶体的制造方法

    公开(公告)号：US07323047B2

    公开(公告)日：2008-01-29

    申请号：US11387624

    申请日：2006-03-22

    申请人： Shin Sugawara ,  Eigo Takahashi ,  Nobuyuki Kitahara ,  Yoshio Miura ,  Hisao Arimune

    发明人： Shin Sugawara ,  Eigo Takahashi ,  Nobuyuki Kitahara ,  Yoshio Miura ,  Hisao Arimune

    IPC分类号： C30B15/20

    CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B29/36 ,  C30B29/38 ,  C30B29/607 ,  Y10T117/1056

    摘要： In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.

    摘要翻译： 在通过使坩埚中的硅熔体从由碳化硅或氮化硅构成的喷嘴部粒状地排出并落下而制造粒状硅晶体的方法中，在下降时使粒状硅熔体冷却固化，添加碳源 当喷嘴部分由碳化硅组成时，并且当喷嘴部分由氮化硅组成时，将氮源添加到坩埚中的硅熔体。 因此，可以产生均匀尺寸的熔融液滴，从而可以以高生产率和优异的再现性制造具有窄粒度变化的粒状硅晶体。

    Photoelectric conversion device and method of manufacturing the device
    8.
    发明授权
    Photoelectric conversion device and method of manufacturing the device 失效
    光电转换装置及其制造方法

    公开(公告)号：US07402747B2

    公开(公告)日：2008-07-22

    申请号：US10781355

    申请日：2004-02-18

    申请人： Shin Sugawara ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

    发明人： Shin Sugawara ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

    IPC分类号： H01L31/00 ,  H02N6/00 ,  E04B5/48

    CPC分类号： H01L31/1804 ,  H01L31/035281 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/072 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particles 3 deposited on the substrate; second conductivity-type semiconductor layers 4 formed on the crystalline semiconductor particles 3; an insulator layer 2 formed among the crystalline semiconductor particles; and an upper electrode layer 5 formed on the second conductivity-type semiconductor layers 4, wherein the second conductivity-type semiconductor layers 4 each have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layers 4 include an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.

    摘要翻译： 公开了一种光电转换装置，其包括用作下电极的基板1; 沉积在基板上的第一导电型晶体半导体颗粒3; 形成在结晶半导体粒子3上的第二导电型半导体层4; 形成在所述结晶半导体颗粒之间的绝缘体层2; 以及形成在第二导电型半导体层4上的上电极层5，其中第二导电型半导体层4在每个晶体半导体颗粒的赤道处或下方的厚度比在其顶点区域具有更小的厚度， 并且第二导电型半导体层4包括具有随着接近结晶半导体颗粒而减小的浓度梯度的杂质元素。

    Photoelectric conversion device and manufacturing method thereof
    9.
    发明授权
    Photoelectric conversion device and manufacturing method thereof 失效
    光电转换装置及其制造方法

    公开(公告)号：US06552405B2

    公开(公告)日：2003-04-22

    申请号：US09916868

    申请日：2001-07-26

    申请人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

    发明人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

    IPC分类号： H01L3106

    CPC分类号： H01L31/1804 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/061 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photoelectric conversion device according to the present invention comprises an aluminum substrate or a substrate formed with an aluminum layer thereon, numerous p type crystalline semiconductor particles deposited on the substrate, an insulator interposed among the numerous p type crystalline semiconductor particles, and a n type semiconductor region formed on the upper portions of the p type crystalline semiconductor particles. An alloy portion comprising the aluminum and the semiconductor material is formed in a boundary part between the aluminum layer and the p type crystalline semiconductor particles, and a p+ region is formed in an interfacial part between the alloy portion and the p type crystalline semiconductor particle on the side of the p type crystalline semiconductor particle. Accordingly, reliability of the joining condition between the substrate and the crystalline semiconductor particles can be improved, thereby realizing a photoelectric conversion device having high conversion efficiency.

    摘要翻译： 根据本发明的光电转换装置包括铝基板或在其上形成有铝层的基板，沉积在基板上的许多p型晶体半导体颗粒，插入在多个p型晶体半导体颗粒中的绝缘体和类型半导体 区域形成在p型结晶半导体颗粒的上部。 在铝层和p型结晶半导体颗粒之间的边界部分中形成包含铝和半导体材料的合金部分，并且在合金部分和p型晶体半导体颗粒之间的界面部分中形成p +区域 p型结晶半导体颗粒的侧面。因此，可以提高基板和结晶半导体颗粒之间的接合条件的可靠性，从而实现具有高转换效率的光电转换装置。

    Photoelectric conversion device and method for manufacturing the same
    10.
    发明申请
    Photoelectric conversion device and method for manufacturing the same 审中-公开
    光电转换装置及其制造方法

    公开(公告)号：US20050236030A1

    公开(公告)日：2005-10-27

    申请号：US10998190

    申请日：2004-11-24

    申请人： Shin Sugawara ,  Hideki Hakuma ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

    发明人： Shin Sugawara ,  Hideki Hakuma ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

    IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/18

    CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/50

    摘要： A photoelectric conversion device has a structure in which a plurality of crystalline semiconductor particles (3) of one conductivity type each of which has a semiconductor portion (4) of the opposite conductivity type on its surface are joined to a substrate 1 serving as a lower electrode. The substrate (1) and the semiconductor portion (4) are disposed in a state of being separated by a separation portion (6). An insulator (2) is formed between the adjoining crystalline semiconductor particles (3) so as to cover the surface of the substrate (1) and the lower part of the semiconductor portion (4) and so as to expose the upper part of the semiconductor portion (4). An upper electrode (5) is formed so as to cover the insulator (2) and the upper part of the semiconductor portion (4). A short circuit between the upper electrode (5) and the substrate (1) serving as a lower electrode which is caused by the semiconductor portion (4) can be prevented by providing the separation portion (6). Therefore, the photoelectric conversion device can have high conversion efficiency and high productivity.

    摘要翻译： 光电转换装置具有如下结构：其中一个导电类型的多个结晶半导体颗粒（3）在其表面上具有相反导电类型的半导体部分（4）被接合到用作下部的基板1 电极。 基板（1）和半导体部分（4）以分离部分（6）分开的状态设置。 在邻接的结晶半导体颗粒（3）之间形成绝缘体（2），以覆盖基板（1）的表面和半导体部分（4）的下部，以便露出半导体的上部 部分（4）。 上电极（5）形成为覆盖绝缘体（2）和半导体部分（4）的上部。 通过设置分离部（6），能够防止由上述半导体部（4）引起的上部电极（5）与作为下部电极的基板（1）之间的短路。 因此，光电转换装置可以具有高转换效率和高生产率。