公开(公告)号：US4551394A

公开(公告)日：1985-11-05

申请号：US674903

申请日：1984-11-26

申请人： Regis J. Betsch ,  Michael S. Liu ,  Obert N. Tufte

发明人： Regis J. Betsch ,  Michael S. Liu ,  Obert N. Tufte

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/267

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/8221 ,  H01L21/8252 ,  Y10S148/026 ,  Y10S148/059 ,  Y10S148/072 ,  Y10S148/084 ,  Y10S438/933 ,  Y10T428/12674 ,  Y10T428/12681

摘要： Localized epitaxial growth of GaAs from a silicon monocrystalline substrate to provide a three-dimensional Si-GaAs structure and method. The silicon has an insulating layer deposited thereover and a window is opened through the layer to expose a small area of the underlying silicon from which silicon is epitaxially grown until the window is nearly full whereupon a thin buffer layer such as germanium is epitaxially grown over the epi-silicon to fill the window. Al.sub.x Ga.sub.1-x As (where x.gtoreq.0) is then locally epitaxially grown from the buffer layer and it grows laterally as well as vertically to cover the surrounding insulating layer surface and provide a site for high frequency electronics.

摘要翻译： 从硅单晶衬底的GaAs的局部外延生长提供三维Si-GaAs结构和方法。 该硅具有沉积在其上的绝缘层，并且通过该层开放窗口以暴露硅外延生长直到窗口几乎完整的下面的硅的小区域，于是在诸如锗之类的薄缓冲层如外延生长 外延硅填充窗口。 Al x Ga 1-x As（其中x> / = 0）然后从缓冲层局部外延生长，并且其横向和垂直生长以覆盖周围的绝缘层表面并提供用于高频电子器件的部位。

公开(公告)号：US4128680A

公开(公告)日：1978-12-05

申请号：US803010

申请日：1977-06-03

申请人： Joseph D. Heaps ,  Obert N. Tufte

发明人： Joseph D. Heaps ,  Obert N. Tufte

IPC分类号： C04B41/88 ,  H01L21/331 ,  H01L29/73 ,  H01L31/0224 ,  H01L31/04 ,  B32B3/10 ,  B05D5/12 ,  B32B9/04 ,  B32B13/04

CPC分类号： H01L31/022425 ,  Y02E10/50 ,  Y10T428/24273 ,  Y10T428/24298 ,  Y10T428/24314 ,  Y10T428/24322 ,  Y10T428/24331

摘要： When electrically insulating ceramic substrates are coated with silicon by any of a number of methods that brings the substrate into contact with molten silicon, electrical contact can only be made conveniently to the exposed surface of the silicon coating. This invention teaches an improvement for making electrical contact to the interface surface of the silicon. It was discovered that by providing narrow slits or small holes in the ceramic substrate that upon coating the substrate with molten silicon, molten slicon will wick through the slits or holes to the uncoated surface of the ceramic.

摘要翻译： 当电绝缘陶瓷衬底通过使衬底与熔融硅接触的多种方法中的任何一种被硅涂覆时，电接触只能方便地进行到硅涂层的暴露表面。 本发明教导了与硅的界面表面进行电接触的改进。 已经发现，通过在陶瓷基片中提供狭窄的狭缝或小孔，在用熔融硅涂覆基底时，熔融的薄片将穿过狭缝或孔穿过陶瓷的未涂覆的表面。

公开(公告)号：US4706100A

公开(公告)日：1987-11-10

申请号：US891829

申请日：1986-08-01

申请人： Obert N. Tufte

发明人： Obert N. Tufte

IPC分类号： G01L9/00 ,  H01L29/161

CPC分类号： G01L9/0055

摘要： A high-temperature hetero-epitaxial piezo-resistive pressure sensor in which an epitaxial layer of a wide-bandgap semiconductor such as GaAs is grown onto a silicon wafer and the piezoresistors are implanted into the wide-bandgap layer.

摘要翻译： 一种高温异质外延压阻传感器，其中诸如GaAs的宽带隙半导体的外延层生长到硅晶片上，并且将压敏电阻注入到宽带隙层中。

公开(公告)号：US4112135A

公开(公告)日：1978-09-05

申请号：US748982

申请日：1976-12-09

申请人： Joseph D. Heaps ,  Obert N. Tufte

发明人： Joseph D. Heaps ,  Obert N. Tufte

IPC分类号： C04B41/90 ,  C04B41/52 ,  C04B41/89 ,  C30B29/64 ,  H01L21/208 ,  H01L31/0392 ,  B05D1/36 ,  B05D1/00 ,  B05D5/12 ,  B05D7/24

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  H01L31/03921 ,  Y02E10/50

摘要： It is desirable to coat large area, thin sheets of large-grain polycrystalline silicon on an inexpensive ceramic substrate for use in solar cell applications and the like. Such ceramic substrates as are used are chosen from those having thermal expansion coefficients similar to those of silicon. The ceramics meeting these requirements, for example mullite, alumina and zirconia, when brought into contact with molten silicon, however, are not wet by the silicon and no coating takes place. In this invention the method of coating includes the step of carbonizing the surface of such a substrate and then contacting the carbonized surface of the ceramic with the molten silicon, whereupon a large-grain silicon coating is produced wherever the ceramic is carbonized. In this way the ceramic of the type which is not wet by molten silicon can be successfully coated with silicon.

摘要翻译： 期望在用于太阳能电池应用等的便宜的陶瓷基板上涂覆大面积的大颗粒多晶硅薄片。 所使用的这种陶瓷衬底选自具有与硅相似的热膨胀系数的那些。 满足这些要求的陶瓷，例如莫来石，氧化铝和氧化锆，当与熔融硅接触时，不会被硅湿润，并且不会发生涂层。 在本发明中，涂覆方法包括将这种基材的表面碳化，然后使陶瓷的碳化表面与熔融硅接触的步骤，由此在陶瓷被碳化的地方产生大颗粒硅涂层。 以这种方式，不会被熔融硅湿润的类型的陶瓷可以成功地涂覆硅。

公开(公告)号：US4814851A

公开(公告)日：1989-03-21

申请号：US188069

申请日：1988-04-28

申请人： Jonathan K. Abrokwah ,  Nicholas C. Cirillo, Jr. ,  Michael S. Shur ,  Obert N. Tufte

发明人： Jonathan K. Abrokwah ,  Nicholas C. Cirillo, Jr. ,  Michael S. Shur ,  Obert N. Tufte

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/08 ,  H01L27/082 ,  H01L29/43 ,  H01L29/778 ,  H01L27/02

CPC分类号： H01L27/08 ,  H01L27/0605 ,  H01L29/432 ,  H01L29/7786

摘要： A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to form planar, complementary GaAs-based integrated circuits.

摘要翻译： 描述了互补（Al，Ga）As / GaAs异质结构绝缘栅场效应晶体管（HIGFET）方法，其中n沟道和p沟道晶体管都在未掺杂的高迁移率通道中利用二维电子（空穴）气体 以形成平面，互补的基于GaAs的集成电路。

公开(公告)号：US4137355A

公开(公告)日：1979-01-30

申请号：US861760

申请日：1977-12-19

申请人： Joseph D. Heaps ,  Obert N. Tufte

发明人： Joseph D. Heaps ,  Obert N. Tufte

IPC分类号： C04B41/52 ,  C04B41/89 ,  C23C2/04 ,  H01L31/0392 ,  B32B3/10 ,  B32B9/04

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C23C2/04 ,  H01L31/03921 ,  Y02E10/50 ,  Y10T428/24851 ,  Y10T428/24926 ,  Y10T428/30

摘要： It is desirable to coat large area, thin sheets of large-grain polycrystalline silicon on an inexpensive ceramic substrate for use in solar cell applications and the like. Such ceramic substrate as are used are chosen from those having thermal expansion coefficients similar to those of silicon. The ceramics meeting these requirements, for example mulite, alumina and zirconia, when brought into contact with molten silicon, however, are not wet by the silicon and no coating takes place. In this invention the structure includes an interface layer comprising carbon on the surface of such a substrate to render the surface wettable by molten silicon. With this interface layer the ceramic of the type which is not wet by molten silicon can be successfully coated with silicon.

摘要翻译： 期望在用于太阳能电池应用等的便宜的陶瓷基板上涂覆大面积的大颗粒多晶硅薄片。 所使用的这种陶瓷衬底选自具有与硅相似的热膨胀系数的那些。 满足这些要求的陶瓷，例如，与熔融硅接触时，多孔，氧化铝和氧化锆，不会被硅湿润，并且不会发生涂层。 在本发明中，结构包括在这种基底的表面上包含碳的界面层，以使表面被熔融硅润湿。 对于这种界面层，不能被熔融硅浸润的陶瓷可以成功地涂覆硅。