摘要:
A structure for chemical vapor deposition processing includes a substrate carrier (10) having a streamlined shape. When placed in a mainstream flow (21), the substrate carrier (10) maintains a laminar boundary layer over a substrate (17) under high gas flow rate conditions. In a further embodiment, the substrate carrier (10) includes a device (27) for directly injecting a reactant gas stream (33) into the boundary layer.
摘要:
A filter assembly (10) for removing particulate matter from air forced therethrough comprises two pairs of oppositely charged woven electrostatic filtering material. Each pair of electrostatic filtering material comprises a positively charged and a negatively charged layer (22, 24, 28 and 30). An open cell foam layer (26) is disposed between the two pairs. Metal grids (20,32) enclose the filtering elements.
摘要:
A filtering unit (10) has four filter holders (20) arranged in a rectangle around a blower (36). Each filter holder holds up to two filter elements (11). The blower draws air through the filter elements (11) and outputs filtered air through a vent (40). Refillable filter frames (16) are provided to allow the user to change the filter material (18). In one embodiment, glass chips are used as the filter material (18).
摘要:
A structure for chemical vapor deposition processing includes a substrate carrier (10) having a streamlined shape. When placed in a mainstream flow (21), the substrate carrier (10) maintains a laminar boundary layer over a substrate (17) under high gas flow rate conditions. In a further embodiment, the substrate carrier (10) includes a device (27) for directly injecting a reactant gas stream (33) into the boundary layer.
摘要:
An axially rotating circular polishing pad is conditioned by a rotating end effector that has an abrasion disc in contact with a polishing surface of the pad. The end effector moves along a radius of the polishing pad surface at a velocity that varies to compensate for locations on the polishing pad surface having linear velocities that are directly related to their respective radii. A desired contact force is maintained between the end effector and the polishing pad surface.
摘要:
A method of making a crimp connection comprises sliding a crimp ring over a female end of a pipe or tube, the crimp ring having an oval shape; inserting a male end of a fitting into the female end of the pipe or tube; sliding the crimp ring toward the fitting such that the crimp ring at least partly overlaps the inserted male end of the fitting; and applying a compressive force to an exterior surface of the crimp ring. Prior to applying the compressive force, the crimp ring has a first inner diameter and a second inner diameter transverse to the first inner diameter. The first inner diameter is greater than the second inner diameter. The first inner diameter is greater than an outer diameter of the pipe or tube. The second inner diameter is less than the outer diameter of the pipe or tube.
摘要:
In one embodiment, a polishing apparatus (10) includes a retaining ring (12), a pressure ring (16), a first seal (18), and a second seal (20). The retaining ring (12) is movably attached to the pressure ring (16) to create a uniform pressure distribution across the retaining ring (12). In addition a positive fluid pressure is applied to the first seal (18) and the second seal (20) to create the uniform pressure distribution across the retaining ring (12). The uniform pressure distribution across the retaining ring (16) allows a semiconductor substrate (51), polished with the polishing apparatus (10), to have a reduced edge exclusion, and thus increased die yield.