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公开(公告)号:US07665196B2
公开(公告)日:2010-02-23
申请号:US11986788
申请日:2007-11-26
CPC分类号: H03H9/14538 , H03H3/08 , H05K3/048 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49007 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要: Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.
摘要翻译: 提供了在公共压电基板上制造多频表面声波(SAW)器件的方法。 该方法使用单个蚀刻步骤改变SAW器件的波导元件的谐振频率。 蚀刻步骤去除设置在衬底上的多层导电膜的子部分。
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公开(公告)号:US20080222864A1
公开(公告)日:2008-09-18
申请号:US11986788
申请日:2007-11-26
CPC分类号: H03H9/14538 , H03H3/08 , H05K3/048 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49007 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要: Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.
摘要翻译: 提供了在公共压电基板上制造多频表面声波(SAW)器件的方法。 该方法使用单个蚀刻步骤改变SAW器件的波导元件的谐振频率。 蚀刻步骤去除设置在衬底上的多层导电膜的子部分。
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公开(公告)号:US07299528B2
公开(公告)日:2007-11-27
申请号:US10288529
申请日:2002-11-05
CPC分类号: H03H9/14538 , H03H3/08 , H05K3/048 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49007 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要: Provided is a method of manufacturing a multi-frequency surface acoustic wave (SAW) device on a common piezoelectric substrate. The method features varying the resonant frequency of waveguide elements of the SAW device using a single etch step. The etch step removes a sub-portion of multiple layers of conductive film disposed on the substrate.
摘要翻译: 提供了在公共压电基板上制造多频表面声波(SAW)器件的方法。 该方法使用单个蚀刻步骤改变SAW器件的波导元件的谐振频率。 蚀刻步骤去除设置在衬底上的多层导电膜的子部分。
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