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    Lithography Masks, Systems, and Manufacturing Methods
    4.
    发明申请
    Lithography Masks, Systems, and Manufacturing Methods 有权
    光刻面具，系统和制造方法

    公开(公告)号：US20100301457A1

    公开(公告)日：2010-12-02

    申请号：US12471695

    申请日：2009-05-26

    申请人： Uwe Paul Schroeder

    发明人： Uwe Paul Schroeder

    IPC分类号： H01L23/58 ,  G03F1/00 ,  G03B27/42 ,  G03F7/20

    CPC分类号： G03F7/70 ,  G03F1/14 ,  G03F1/144 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70466 ,  H01L21/26

    摘要： Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position.

    摘要翻译： 公开了平版印刷掩模，光刻系统，光刻掩模的制造方法，改变半导体器件的材料层的方法以及制造半导体器件的方法。 在一个实施例中，光刻掩模包括用于至少一个管芯的至少一个材料层的第一图案，第一图案被定向在第一位置。 光刻掩模包括用于至少一个管芯的至少一个材料层的第二图案，第二图案被定向在第二位置。 第二个位置与第一个位置不同。

    Method of Making a Contact in a Semiconductor Device
    5.
    发明申请
    Method of Making a Contact in a Semiconductor Device 有权
    在半导体器件中进行接触的方法

    公开(公告)号：US20100124820A1

    公开(公告)日：2010-05-20

    申请号：US12693231

    申请日：2010-01-25

    申请人： Veit Klee ,  Roman Knoefler ,  Uwe Paul Schroeder

    发明人： Veit Klee ,  Roman Knoefler ,  Uwe Paul Schroeder

    IPC分类号： H01L21/768

    CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897

    摘要： To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.

    摘要翻译： 为了形成半导体器件，在导电区域上形成绝缘层，并且在绝缘层上形成图案转移层。 图案转印层以要形成在绝缘层中的凹槽布局的相反色调被图案化，使得图案转印层保留在要形成凹部的区域上。 掩模材料形成在绝缘层上并与图案转印层对准。 去除图案转印层的剩余部分，并使用掩模材料作为掩模在绝缘层中蚀刻凹陷。

    Lithographic mask, and method for covering a mask layer
    6.
    发明授权
    Lithographic mask, and method for covering a mask layer 失效
    平版印刷掩模和覆盖掩模层的方法

    公开(公告)号：US07405024B2

    公开(公告)日：2008-07-29

    申请号：US10952559

    申请日：2004-09-28

    申请人： Uwe Paul Schroeder ,  Oliver Broermann

    发明人： Uwe Paul Schroeder ,  Oliver Broermann

    IPC分类号： G03F1/14

    CPC分类号： G03F1/62 ,  G03F1/48

    摘要： A lithographic mask having a mask substrate (3) and a patterned mask layer (4) which includes mask structures (5) and can be transferred by lithography to a further substrate is disclosed. With masks of this type, it is customary for a protective layer to be provided in the form of a membrane positioned at a distance from the mask layer (4), in order to keep impurity particles or other impurities away from the focal plane of the mask layer (4). According to the invention, the protective layer (6) is applied in liquid form directly to the mask structures (5) and fills up spaces between the mask structures (4). Then, the protective layer (6), while it is still in the liquid state, is covered with a plane-parallel plate. The continuously dense protective layer (6) which is formed in accordance with the invention is even more reliable in preventing impurity particles or impurities (20) from penetrating into spacers between the structures (5) of the mask layer (4). The impurity particles or impurities (20) can only be deposited on the outer side (16) of the protective layer (6), at a still greater distance from the focal plane.

    摘要翻译： 公开了一种具有掩模衬底（3）和包括掩模结构（5）的图案化掩模层（4）并且可以通过光刻转移到另一衬底的光刻掩模。 对于这种类型的掩模，通常保护层以与掩模层（4）相距一定距离的膜的形式提供，以便使杂质颗粒或其它杂质远离所述掩模层（4）的焦平面 掩模层（4）。 根据本发明，保护层（6）以液体形式直接施加到掩模结构（5）并填充掩模结构（4）之间的空间。 然后，保护层（6）仍处于液体状态时被平面平行板覆盖。 根据本发明形成的连续致密保护层（6）在防止杂质颗粒或杂质（20）渗透到掩模层（4）的结构（5）之间的间隔物中是更可靠的。 杂质颗粒或杂质（20）只能在与焦平面更远的距离处沉积在保护层（6）的外侧（16）上。

    Static random access memory with thin oxide capacitor
    7.
    发明申请
    Static random access memory with thin oxide capacitor 审中-公开
    具有薄氧化物电容器的静态随机存取存储器

    公开(公告)号：US20080087929A1

    公开(公告)日：2008-04-17

    申请号：US11545886

    申请日：2006-10-11

    申请人： Martin Ostermayr ,  Uwe Paul Schroeder

    发明人： Martin Ostermayr ,  Uwe Paul Schroeder

    IPC分类号： H01L29/94

    CPC分类号： H01L27/1104 ,  G11C11/412

    摘要： An SRAM includes an SRAM cell with a semiconductor substrate material, and a capacitor. The capacitor includes a first electrode adjacent the substrate material, a thin oxide adjacent the first electrode and a second electrode adjacent the thin oxide.

    摘要翻译： SRAM包括具有半导体衬底材料的SRAM单元和电容器。 电容器包括邻近衬底材料的第一电极，与第一电极相邻的薄氧化物和邻近薄氧化物的第二电极。

    Method for printing contacts on a substrate
    8.
    发明授权
    Method for printing contacts on a substrate 有权

    公开(公告)号：US07268080B2

    公开(公告)日：2007-09-11

    申请号：US11270400

    申请日：2005-11-09

    申请人： Uwe Paul Schroeder

    发明人： Uwe Paul Schroeder

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76816 ,  Y10S430/151

    摘要： A method for printing contacts utilizes photolithographic pattern reversal. A negative of the contact is printed on a resist layer. Unexposed portions of the resist layer are stripped to expose a first layer. The first layer is etched to remove exposed portions of the first layer not covered by the negative of the contact and to expose a second layer. A pattern reversal is performed to cure exposed portions of the second layer not covered by the first layer.

    Method and apparatus for producing rectangular contact holes utilizing side lobe formation
    9.
    发明授权
    Method and apparatus for producing rectangular contact holes utilizing side lobe formation 有权
    利用旁瓣形成生产矩形接触孔的方法和装置

    公开(公告)号：US07224030B2

    公开(公告)日：2007-05-29

    申请号：US10863786

    申请日：2004-06-08

    申请人： Uwe Paul Schroeder

    发明人： Uwe Paul Schroeder

    IPC分类号： H01L27/01

    CPC分类号： G03F1/32 ,  G03F1/26

    摘要： An array of small square contact holes, on the order of magnitude of the exposing light wavelength, are formed by selecting the partial coherence and numerical aperture of the exposing light source and the pitch of the array of windows on an attenuating phase shifting mask so that side lobes formed by the exposing light being diffracted as it passes through the array of window constructively interfere with one another in the vicinity of a desired contact hole on the material surface. This constructive interference of side lobe patterns, in combination with the pattern formed by the light passing undiffracted through the array of windows, forms an array of square exposed regions on the material surface. When the material is a photoresist, the exposed regions can be selectively dissolved in order to form square patterns that can be used to etch square holes in the underlying substrate or layer. In subsequent steps, selected ones of the array of square holes can be filled in with a conductive material to form vias and selected others of the square holes can be filled in with an insulating material so as to avoid the formation of unintended vias or conducting paths.

    摘要翻译： 通过在衰减的相移掩模上选择曝光光源的部分相干和数值孔径以及窗口阵列的间距，形成曝光光波长数量级的小方形接触孔阵列，使得 当通过窗口阵列时由被衍射的曝光所形成的旁瓣在材料表面上期望的接触孔附近相互干扰。 旁瓣图案的这种结构性干扰与通过未折射通过窗阵列的光形成的图案组合在材料表面上形成方阵曝光区域的阵列。 当材料是光致抗蚀剂时，可以选择性地溶解暴露的区域以形成可用于蚀刻下面的衬底或层中的方形孔的正方形图案。 在随后的步骤中，可以用导电材料填充方孔阵列中的选定的方孔以形成通孔，并且可以用绝缘材料填充所选择的其他方孔，以避免形成非预期的通孔或导电路径 。

    Authentication for use of high speed network resources
    10.
    发明授权
    Authentication for use of high speed network resources 失效
    使用高速网络资源的认证

    公开(公告)号：US07187678B2

    公开(公告)日：2007-03-06

    申请号：US09927474

    申请日：2001-08-13

    申请人： Philip Cunetto ,  James M. Doherty ,  Chien-Chun Lu ,  Timothy Paul Schroeder

    发明人： Philip Cunetto ,  James M. Doherty ,  Chien-Chun Lu ,  Timothy Paul Schroeder

    IPC分类号： H04L12/56

    CPC分类号： H04L12/2856 ,  H04L12/2874 ,  H04L63/102

    摘要： A method and system for associating a switched virtual circuit (SVC) connection request from an access port in an asynchronous transfer mode (ATM) network to a subscriber and optionally registering an address of the access port in relation to the subscriber. The method and system include receiving a signaling protocol message requesting the SVC connection from the access port, determining whether the signaling protocol message contains subscriber authentication data and, when authenticated, establishing the SVC connection. Furthermore, the SVC connection may be established only if service policies corresponding to the subscriber retrieved from a database indicate that the subscriber is entitled to make SVC connections. The method and system further include registering an address of the access port in the ATM network by substituting the address of the access port for an original subscriber address.

    摘要翻译： 一种用于将来自异步传输模式（ATM）网络中的接入端口的交换虚拟电路（SVC）连接请求与用户相关联并且可选地注册相对于订户的接入端口的地址的方法和系统。 所述方法和系统包括从接入端口接收请求SVC连接的信令协议消息，确定信令协议消息是否包含订户认证数据，并且在认证时建立SVC连接。 此外，仅当与从数据库检索到的订户相对应的服务策略指示用户有权进行SVC连接时，才能建立SVC连接。 该方法和系统还包括通过将接入端口的地址替换为原始用户地址来在ATM网络中注册接入端口的地址。