-
公开(公告)号：US11688462B2
公开(公告)日：2023-06-27
申请号：US17353983
申请日：2021-06-22
发明人： Yun Heub Song , Chang Eun Song
IPC分类号： G11C11/34 , G11C16/04 , G11C16/08 , G11C16/16 , G11C16/24 , G11C16/26 , G11C16/30 , H10B41/10 , H10B41/27 , H10B41/35 , H10B41/41 , H10B43/10 , H10B43/27 , H10B43/35 , H10B43/40
CPC分类号： G11C16/0483 , G11C16/08 , G11C16/16 , G11C16/24 , G11C16/26 , G11C16/30 , H10B41/10 , H10B41/27 , H10B41/35 , H10B41/41 , H10B43/10 , H10B43/27 , H10B43/35 , H10B43/40
摘要： Disclosed is a three-dimensional flash memory including a back gate, which includes word lines extended and formed in a horizontal direction on a substrate so as to be sequentially stacked, and strings penetrating the word lines and extended and formed in one direction on the substrate. Each of the strings includes a channel layer extended and formed in the one direction, and a charge storage layer extended and formed in the one direction to surround the channel layer, the channel layer and the charge storage layer constitute memory cells corresponding to the word lines, and the channel layer includes a back gate extended and formed in the one direction, with at least a portion of the back gate surrounded by the channel layer, and an insulating layer extended and formed in one direction between the back gate and the channel layer.
-
公开(公告)号：US20220319600A1
公开(公告)日：2022-10-06
申请号：US17636910
申请日：2020-06-26
发明人： Yun Heub SONG , Inho NAM
IPC分类号： G11C16/04 , H01L27/11556 , H01L27/11582
摘要： Disclosed are a three-dimensional flash memory aimed at integration, and a method for manufacturing same. According to an embodiment, a three-dimensional flash memory comprises: multiple memory cell strings formed on a substrate so as to extend in a direction, each of the multiple memory cell strings comprising a channel layer and an electric charge storage layer surrounding the channel layer; multiple word lines connected perpendicularly to the multiple memory cell strings; and at least one intermediate wire layer formed at an intermediate point with regard to the direction in which the multiple memory cell strings are formed to extend, the at least one intermediate wire layer being selectively available as a source electrode or as a drain electrode with regard to each of the multiple memory cell strings. At least one of the multiple memory cell strings is formed in a free area secured among the multiple word lines as a result of inclusion of the at least one intermediate wire layer in the three-dimensional flash memory.
-
公开(公告)号：US20230157021A1
公开(公告)日：2023-05-18
申请号：US17923104
申请日：2021-05-04
发明人： Yun Heub SONG
IPC分类号： H10B43/27
CPC分类号： H10B43/27
摘要： Disclosed is a three 3D flash memory having an improved structure and a method for manufacturing the same.
-
公开(公告)号：US20210398593A1
公开(公告)日：2021-12-23
申请号：US17353983
申请日：2021-06-22
发明人： Yun Heub SONG , Chang Eun SONG
IPC分类号： G11C16/04 , G11C16/16 , G11C16/26 , G11C16/24 , G11C16/30 , G11C16/08 , H01L27/11519 , H01L27/11524 , H01L27/11529 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11582
摘要： Disclosed is a three-dimensional flash memory including a back gate, which includes word lines extended and formed in a horizontal direction on a substrate so as to be sequentially stacked, and strings penetrating the word lines and extended and formed in one direction on the substrate. Each of the strings includes a channel layer extended and formed in the one direction, and a charge storage layer extended and formed in the one direction to surround the channel layer, the channel layer and the charge storage layer constitute memory cells corresponding to the word lines, and the channel layer includes a back gate extended and formed in the one direction, with at least a portion of the back gate surrounded by the channel layer, and an insulating layer extended and formed in one direction between the back gate and the channel layer.
-
-
-
搜索结果
4 条记录 (耗时 0.012 秒)
