公开(公告)号：US20170104315A1

公开(公告)日：2017-04-13

申请号：US14876817

申请日：2015-10-07

Applicant: PING-HUI YEH ,  Meng-Chun Yu ,  Jia-Huan Lin ,  Ching-Chin Huang

Inventor： PING-HUI YEH ,  Meng-Chun Yu ,  Jia-Huan Lin ,  Ching-Chin Huang

IPC: H01S5/183 ,  H01L33/06 ,  H01S5/343 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01S5/18308 ,  H01L27/15 ,  H01L33/0045 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01L33/465 ,  H01S5/0213 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/34333 ,  H01S2304/00

Abstract: This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL

公开(公告)号：US09819152B2

公开(公告)日：2017-11-14

申请号：US14876817

申请日：2015-10-07

Applicant: Ping-Hui Yeh ,  Meng-Chun Yu ,  Jia-Huan LIn ,  Ching-Chin Huang

Inventor： Ping-Hui Yeh ,  Meng-Chun Yu ,  Jia-Huan LIn ,  Ching-Chin Huang

IPC: H01S5/183 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46 ,  H01S5/343

CPC classification number: H01S5/18308 ,  H01L27/15 ,  H01L33/0045 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01L33/465 ,  H01S5/0213 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/34333 ,  H01S2304/00

Abstract: This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL.

公开(公告)号：US20060164717A1

公开(公告)日：2006-07-27

申请号：US11039822

申请日：2005-01-24

Applicant: Sheng-Lung Huang ,  Chia-Yao Lo ,  Kwang-Yao Huang ,  Jian-Cheng Chen ,  Chiang-Yuan Chuang ,  Chien-Chih Lai ,  Yen-Sheng Lin ,  Ping-hui Yeh

Inventor： Sheng-Lung Huang ,  Chia-Yao Lo ,  Kwang-Yao Huang ,  Jian-Cheng Chen ,  Chiang-Yuan Chuang ,  Chien-Chih Lai ,  Yen-Sheng Lin ,  Ping-hui Yeh

IPC: H01S3/00

CPC classification number: H01S3/06754 ,  C03C13/008 ,  C03C13/045 ,  H01S3/06716 ,  H01S3/1623 ,  H01S3/1643

Abstract: An optical amplifier includes an optical fiber having a core doped with transition metal ions, and at least one glass cladding enclosing the core. By using the fiber, the optical amplifier of the invention has a gain bandwidth of more than 300 nm including 1300-1600 nm band in low-loss optical communication.

Abstract translation: 光放大器包括具有掺杂有过渡金属离子的芯的光纤和包围芯的至少一个玻璃包层。 通过使用光纤，本发明的光放大器在低损耗光通信中具有大于300nm的增益带宽，包括1300-1600nm波段。