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公开(公告)号：US10279497B2
公开(公告)日：2019-05-07
申请号：US15220628
申请日：2016-07-27
摘要： A cutting apparatus is disclosed which includes a cutter knife which is reciprocally moveable along a path of travel; a track member mounted adjacent to the cutter knife and which mechanically cooperates with the cutter knife so as to define, at least in part, a first non-cutting position, and a second cutting position for the cutter knife; and a magnet is mounted in a location on the track member and which releasably, magnetically restrains the cutter knife when the cutter knife is in the first non-cutting position.
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公开(公告)号：US20110144655A1
公开(公告)日：2011-06-16
申请号：US13027002
申请日：2011-02-14
申请人： Terry D. Daglow , Robert E. Jones
发明人： Terry D. Daglow , Robert E. Jones
IPC分类号： A61B19/00
CPC分类号： A61B90/10 , A61B2090/103
摘要： In one embodiment, an apparatus comprises: a base structure adapted to be inserted within the burr hole; a lead securing member for securing the lead, the lead securing member comprising a first arm structure and a second arm structure, at least one spring loaded structure adapted to exert a force to bring the first arm structure and the second arm structure together; and a positioning tool having a distal end adapted to be inserted within the lead securing member. When the positioning tool is positioned within the lead securing member, the distal end holds the first and second arm structures a sufficient distance apart to receive a lead between the first and second arm structures; wherein the positioning tool comprises a control structure at a proximal end that, when engaged, causes the distal end of the positioning tool to be released from between the first and second arm structures.
摘要翻译： 在一个实施例中，一种装置包括：适于插入钻孔内的基座结构; 用于固定所述引线的引线固定构件，所述引线固定构件包括第一臂结构和第二臂结构，至少一个弹簧加载结构，其适于施加力以使所述第一臂结构和所述第二臂结构在一起; 以及定位工具，其具有适于插入到所述引线固定构件内的远端。 当定位工具定位在引线固定构件内时，远端将第一和第二臂结构保持足够的距离，以在第一和第二臂结构之间接收引线; 其中所述定位工具包括在近端处的控制结构，所述控制结构在接合时使所述定位工具的远端从所述第一和第二臂结构之间释放。
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公开(公告)号：US20110004281A1
公开(公告)日：2011-01-06
申请号：US12829762
申请日：2010-07-02
申请人： Robert E. Jones
发明人： Robert E. Jones
IPC分类号： A61N1/05
CPC分类号： A61N1/0558 , A61B17/3468 , A61M25/02 , A61M2025/0293 , A61M2039/0223 , A61M2039/0261 , A61N1/05 , A61N1/057 , A61N2001/0582
摘要： There is disclosed various embodiments of an implantable anchor for anchoring a medical lead within a patient. The implantable anchor includes a body having at least one lumen for receiving a medical lead, a cam integrated with the body and rotatable to extend into the lumen for engaging the medical lead and inhibiting the movement of the lead with respect to the anchor. The cam may include a handle for facilitating the rotation of the cam. A needle could be connected to the handle to facilitate the securing of the anchor to a portion of the patient.
摘要翻译： 公开了用于将医疗引线锚定在患者体内的可植入锚固件的各种实施例。 可植入锚固体包括具有用于接收医用引线的至少一个内腔的主体，与主体一体化并且可转动地延伸到内腔中以接合医疗引线并阻止引线相对于锚的移动的凸轮。 凸轮可以包括用于促进凸轮旋转的手柄。 针可以连接到手柄以便于将锚固件固定到患者的一部分。
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公开(公告)号：US07851340B2
公开(公告)日：2010-12-14
申请号：US11678322
申请日：2007-02-23
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795
摘要： There is a method for forming a semiconductor device. Portions of a sacrificial layer are removed to expose a first seed layer region. The first seed layer region corresponds to a first semiconductor region, and a remaining portion of the sacrificial layer corresponds to a second semiconductor region. An epitaxial semiconductor material is deposited over the first seed layer region. A capping layer is formed to overlie the epitaxial semiconductor material and the remaining portion of the sacrificial layer. Portions of the capping layer are removed to form a capping structure that overlies a part of the remaining portion of the sacrificial layer. Portions of the sacrificial layer not covered by the capping structure are removed to form a sacrificial structure having sidewalls. Fin structures are formed adjoining the sidewalls by depositing a semiconductor material along the sidewalls. Portions of the capping structure are removed to expose portions of sacrificial layer between adjacent fin structures. Portions of the sacrificial material between the adjacent fin structures are removed.
摘要翻译： 存在形成半导体器件的方法。 去除牺牲层的一部分以露出第一种子层区域。 第一籽晶层区域对应于第一半导体区域，牺牲层的剩余部分对应于第二半导体区域。 外延半导体材料沉积在第一籽晶层区域上。 形成盖层以覆盖外延半导体材料和牺牲层的剩余部分。 去除覆盖层的部分以形成覆盖在牺牲层的剩余部分的一部分上的封盖结构。 去除了不被封盖结构覆盖的牺牲层的部分以形成具有侧壁的牺牲结构。 通过沿着侧壁沉积半导体材料而形成邻接侧壁的翅片结构。 去除部分封盖结构以暴露相邻鳍结构之间的牺牲层的部分。 去除相邻鳍结构之间牺牲材料的部分。
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公开(公告)号：US07772048B2
公开(公告)日：2010-08-10
申请号：US11678327
申请日：2007-02-23
IPC分类号： H01L21/8232
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/66795
摘要： A semiconductor device is made by steps of removing portions of a first capping layer, removing portions of a sacrificial layer, recessing sidewalls, and forming fin structures. The step of removing portions of the first capping layer forms a first capping structure that covers portions of the sacrificial layer. The step of removing portions of the sacrificial layer removes portions of the sacrificial layer that are not covered by the first capping structure to define an intermediate structure. The step of recessing the sidewalls recesses sidewalls of the intermediate structure relative to edge regions of the first capping structure to form a sacrificial structure having recessed sidewalls. The step of forming fin structures forms fin structures adjacent to the recessed sidewalls.
摘要翻译： 半导体器件通过去除第一覆盖层的部分，去除牺牲层的部分，凹陷侧壁和形成鳍结构的步骤制成。 去除第一覆盖层的部分的步骤形成覆盖牺牲层的部分的第一封盖结构。 去除牺牲层的部分的步骤去除牺牲层的不被第一封盖结构覆盖以限定中间结构的部分。 凹陷侧壁的中间结构的侧壁相对于第一封盖结构的边缘区域凹陷的步骤形成具有凹陷侧壁的牺牲结构。 形成翅片结构的步骤形成与凹陷侧壁相邻的翅片结构。
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公开(公告)号：US20090086524A1
公开(公告)日：2009-04-02
申请号：US11865991
申请日：2007-10-02
申请人： Syed M. Alam , Robert E. Jones
发明人： Syed M. Alam , Robert E. Jones
CPC分类号： G11C17/14 , H01L25/18 , H01L27/112 , H01L27/11226 , H01L2225/06513 , H01L2225/06527 , H01L2924/0002 , Y10T29/49002 , H01L2924/00
摘要： A read only memory implemented as a 3D integrated device has a first stratum, a second stratum, and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the read only memory. The stratum may be in wafer form or in die form. The first stratum includes functional active devices and at least one non-programmed active device. The second stratum includes at least conductive routing to be associated with the at least one non-programmed active device. The bonded inter-strata connections include at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for providing conductive routing to the programmed active device. The two strata thus form a programmed ROM. Other types of programmable storage devices may be implemented by bonding the two strata.
摘要翻译： 实现为3D集成设备的只读存储器具有用于将第一层耦合到第二层的第一层，第二层和粘结层间连接。 两层之间的物理绑定实现了只读存储器的编程。 层可以是晶片形式或模具形式。 第一层包括功能性有源器件和至少一个非编程有源器件。 第二层包括至少与至少一个非编程的有源设备相关联的导电路由。 所述接合的层间连接包括用于对所述至少一个非编程的有源器件进行编程以及为所述编程的有源器件提供导电路由的至少一个结合的可编程层间连接。 因此，这两个层由此形成一个编程的ROM。 其他类型的可编程存储设备可以通过键合两个层来实现。
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7.发明授权Automated method and system for recognizing unfulfilled obligations and initiating steps to convert said obligations to a fulfilled status or to a null status for resale 有权自动化方法和系统，用于识别未履行的义务，并启动将所述义务转换为履行状态或转为零状态的步骤公开(公告)号：US07194417B1
公开(公告)日：2007-03-20
申请号：US09668494
申请日：2000-09-22
申请人： Robert E. Jones
发明人： Robert E. Jones
IPC分类号： G06Q10/00
CPC分类号： G06Q10/02
摘要： An automated method and system for identifying date-sensitive entries in a database wherein an obligation must be satisfied relative to the entry according to instructions provided by the beneficiary of the obligation. The method and system of the invention can be practiced from a location remote from the database and are particularly useful in a number of situations and particularly those wherein unticketed reservations are maintained in a storage medium for a time prior to issuance of a ticket to “firm up” the reservation to a ticketed status. The present system and methodology finds particular utility enforcing ticketing time limit rules on travel agency or other reservation and ticket issuers involved in the reserving and ticketing of airline bookings and the like and results in the reduction of no-shows and overbooking while increasing onboard load factors on sold-out flights in particular. The automated system of the invention is capable of operating essentially continually throughout seven days a week and twenty-four hours each day to constantly “firm” all or selected flights of a given carrier. Enforcement of ticket time limit rules can extend at the option of a user to booking class, market, point of sale and the like or any combination thereof.
摘要翻译： 一种用于识别数据库中的日期敏感条目的自动化方法和系统，其中根据受益人提供的指示，义务必须相对于条目来满足义务。 本发明的方法和系统可以从远离数据库的位置实施，并且在许多情况下特别有用，特别是在向“公司”颁发机票之前的一段时间内将存储介质中的未认证的保留维护 “预订”的机票状态。 目前的制度和方法确定了对旅行社或其他预订机票订票和票务发行机构订票，票务等航空公司订票的特定实用程序执行时间限制规定，并减少了不显示和超额预订，同时增加了车载负载因子 特别是售罄航班。 本发明的自动化系统能够每周七天和每天二十四小时基本上持续运行，以不断地“固定”给定运营商的所有或选定航班。 机票时间限制规则的执行可以根据用户的选择扩展到预订类别，市场，销售点等或其任何组合。
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公开(公告)号：US06790727B2
公开(公告)日：2004-09-14
申请号：US10348267
申请日：2003-01-21
IPC分类号： H01L21336
CPC分类号： H01L27/115 , B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L27/108 , H01L27/10844 , H01L27/11521 , H01L29/7883 , Y10S438/981
摘要： Both a non-volatile memory (NVM) and a dynamic nanocrystal memory (DNM) are integrated on a semiconductor substrate. Control gates and control dielectrics with embedded nanocrystals or discrete storage elements are formed over differing thicknesses of tunnel dielectrics to form the two memories. Source and drain regions are formed within the semiconductor substrate adjacent to the tunnel dielectrics. Various methods can be used to form a thin tunnel oxide and a thick tunnel oxide by adding minimum processing steps.
摘要翻译： 非易失性存储器（NVM）和动态纳米晶体存储器（DNM）都集成在半导体衬底上。 具有嵌入式纳米晶体或离散存储元件的控制栅极和控制电介质形成在不同厚度的隧道电介质上以形成两个存储器。 源极和漏极区域形成在与隧道电介质相邻的半导体衬底内。 通过添加最小的加工步骤，可以使用各种方法形成薄的隧道氧化物和厚的隧道氧化物。
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公开(公告)号：US06576532B1
公开(公告)日：2003-06-10
申请号：US09997886
申请日：2001-11-30
申请人： Robert E. Jones , Bruce E. White
发明人： Robert E. Jones , Bruce E. White
IPC分类号： H01L2136
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L31/0352 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A heteroepitaxial structure is made using nanocrystals that are formed closer together than normal lithography patterning would allow. The nanocrystals are oxidized and thus selectively etchable with respect to the substrate and surrounding material. In one case the oxidized nanocrystals are removed to expose the substrate at those locations and selective epitaxial germanium is then grown at those exposed substrate locations. The inevitable formation of the misfit dislocations does minimal harm because they are terminated at the surrounding material. In another case the surrounding material is removed and the germanium is epitaxially grown at the exposed substrate where the surrounding material is removed. The resulting misfit dislocations in the germanium terminate at the oxidized nanocrystals. By using nanocrystals that are able to be formed much closer together than is available for other features through lithography, the misfits are prevented from extending so far as to create harmful threading dislocations.
摘要翻译： 使用与常规光刻图案所允许的更接近的纳米晶体制造异质外延结构。 纳米晶体被氧化并因此相对于基底和周围材料可选择性地蚀刻。 在一种情况下，去除氧化的纳米晶体以在那些位置露出衬底，然后在那些暴露的衬底位置生长选择性外延锗。 错配错位的不可避免的形成是最小的伤害，因为它们被终止于周围的物质。 在另一种情况下，除去周围的材料，并且在暴露的基底外延生长锗，其中周围的材料被去除。 所产生的锗失配位错在氧化的纳米晶体上终止。 通过使用能够形成得比通过光刻可用于其它特征的纳米晶体更多的纳米晶体，阻止了错配以延伸以产生有害的穿线位错。
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公开(公告)号：US06555858B1
公开(公告)日：2003-04-29
申请号：US09713734
申请日：2000-11-15
IPC分类号： H01L2100
CPC分类号： H01L27/228 , B82Y10/00
摘要： A self-aligned magnetic clad bit line structure (274) for a magnetic memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (250), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is substantially recessed within the trench with respect to the top of the trench.
摘要翻译： 公开了一种用于磁存储元件（240a）的自对准磁性覆层位线结构（274）及其形成方法，其中自对准磁性覆层位线结构（274）在沟槽（258）内延伸并且包括 导电材料（250），磁性覆层侧壁（262）和磁性覆层帽（252）。 至少部分地围绕导电材料（264）的磁性覆层侧壁（262）和磁性覆层帽（252）相对于沟槽的顶部基本上在沟槽内凹陷。
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