公开(公告)号：US07091108B2

公开(公告)日：2006-08-15

申请号：US10661738

申请日：2003-09-11

申请人： Peter Tolchinsky ,  Irwin Yablok ,  Chuan Hu ,  Richard D. Emery

发明人： Peter Tolchinsky ,  Irwin Yablok ,  Chuan Hu ,  Richard D. Emery

IPC分类号： H01L21/46

CPC分类号： H01L21/6835 ,  H01L21/3063 ,  H01L21/76254 ,  H01L23/367 ,  H01L24/81 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2924/01019 ,  H01L2924/14 ,  H01L2924/181 ,  Y10S438/96 ,  H01L2924/00012 ,  H01L2924/00

摘要： Embodiments of the invention use silicon on porous silicon wafers to produce a reduced-thickness IC device wafers. After device manufacturing, a temporary support is bonded to the device layer. The uppermost silicon layer is then separated from the silicon substrate by splitting the porous silicon layer. The porous silicon layer and temporary support are then removed and packaging is completed. Embodiments of the invention provide reliable, low cost methods and apparatuses for producing reduced-thickness IC device wafers to substantially increase thermal conductivity between the device layer of an IC device and a heat sink. In alternative embodiments, the layered silicon substrate includes an insulator layer on a layer of porous silicon and a silicon layer on the insulator layer.

公开(公告)号：US07952190B2

公开(公告)日：2011-05-31

申请号：US10608718

申请日：2003-06-27

申请人： Richard D. Emery

发明人： Richard D. Emery

IPC分类号： H01L23/34

CPC分类号： H01L23/562 ,  H01L23/36 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/15174 ,  H01L2924/15312 ,  H01L2224/0401

摘要： A method and apparatus for fabrication of microelectronic devices are shown. In an embodiment of the invention, a microelectronic device comprises a die, the die comprising a first side, a second side, and an edge; a first plate, the first plate coupled with the die; and a package, the die being coupled with the package.

摘要翻译： 示出了用于制造微电子器件的方法和装置。 在本发明的一个实施例中，微电子装置包括一个模具，该模具包括第一侧面，第二侧面和边缘; 第一板，第一板与模具耦合; 和封装，裸片与封装件耦合。

公开(公告)号：US07095111B2

公开(公告)日：2006-08-22

申请号：US10403645

申请日：2003-03-31

申请人： Chuan Hu ,  Richard D. Emery

发明人： Chuan Hu ,  Richard D. Emery

IPC分类号： H01L23/34

CPC分类号： H01L23/427 ,  H01L23/36 ,  H01L24/24 ,  H01L24/72 ,  H01L24/82 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/351 ,  H01L2924/00

摘要： A package for a die includes a porous wick layer disposed between the die and a substrate. A sealed chamber between the die and substrate includes a phase-change fluid to transfer heat from a substrate side of the die to a heat spreader. Interconnects coupling bonding pads of the die to the substrate may pass through the chamber and through vias in the wick layer. In embodiments, the wick layer may have a coefficient of thermal expansion (CTE) matching a CTE of the die of the heat spreader. Heat generated by the die may evaporate the fluid in a die region and the evaporated fluid may condense in a heat spreader region. The wick layer returns the condensed fluid from the heat spreader region to the die region to complete the cycle. The fluid may be non-corrosive with respect to the interconnects and may be an electrical insulator. In embodiments, the wick layer in the heat spreader region may be disposed on the heat spreader in a pattern to efficiently draw the condensed fluid to the die region. In other embodiments, the wick layer may comprise materials of different pore size and porosity to efficiently draw the condensed fluid to the die region.

摘要翻译： 用于管芯的封装包括设置在管芯和基板之间的多孔芯层。 模具和衬底之间的密封腔室包括相互转换流体，以将热量从模具的衬底侧传递到散热器。 将管芯的接合焊盘耦合到衬底的互连可以穿过腔室并穿过芯层中的通孔。 在实施例中，芯吸层可以具有与散热器的管芯的CTE匹配的热膨胀系数（CTE）。 由模具产生的热量可能使模具区域中的流体蒸发并且蒸发的流体可以在散热器区域中冷凝。 芯层将冷凝流体从散热器区域返回到模具区域以完成循环。 流体相对于互连件可以是非腐蚀性的并且可以是电绝缘体。 在实施例中，散热器区域中的芯吸层可以以图案方式设置在散热器上，以有效地将冷凝的流体抽吸到管芯区域。 在其它实施例中，芯层可以包括不同孔径和孔隙率的材料，以有效地将冷凝的流体抽吸到模具区域。

公开(公告)号：US07531429B2

公开(公告)日：2009-05-12

申请号：US11397412

申请日：2006-04-03

申请人： Peter Tolchinsky ,  Irwin Yablok ,  Chuan Hu ,  Richard D. Emery

发明人： Peter Tolchinsky ,  Irwin Yablok ,  Chuan Hu ,  Richard D. Emery

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/76 ,  H01L21/00 ,  H01L21/762

CPC分类号： H01L21/6835 ,  H01L21/3063 ,  H01L21/76254 ,  H01L23/367 ,  H01L24/81 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2924/01019 ,  H01L2924/14 ,  H01L2924/181 ,  Y10S438/96 ,  H01L2924/00012 ,  H01L2924/00

摘要： Embodiments of the invention use silicon on porous silicon wafers to produce a reduced-thickness IC device wafers. After device manufacturing, a temporary support is bonded to the device layer. The uppermost silicon layer is then separated from the silicon substrate by splitting the porous silicon layer. The porous silicon layer and temporary support are then removed and packaging is completed. Embodiments of the invention provide reliable, low cost methods and apparatuses for producing reduced-thickness IC device wafers to substantially increase thermal conductivity between the device layer of an IC device and a heat sink. In alternative embodiments, the layered silicon substrate includes an insulator layer on a layer of porous silicon and a silicon layer on the insulator layer.

摘要翻译： 本发明的实施例在多孔硅晶片上使用硅来制造厚度较薄的IC器件晶片。 在器件制造之后，临时支撑件被结合到器件层。 然后通过分离多孔硅层将最上层的硅层与硅衬底分离。 然后去除多孔硅层和临时支撑物，并且完成包装。 本发明的实施例提供了可靠的，低成本的方法和装置，用于生产较薄的IC器件晶片，以显着增加IC器件的器件层与散热片之间的热导率。 在替代实施例中，分层硅衬底包括在多孔硅层上的绝缘体层和绝缘体层上的硅层。