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    NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES
    2.
    发明申请
    NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES 有权
    基于酸性催化消除极性分子的负性电阻

    公开(公告)号：US20070026339A1

    公开(公告)日：2007-02-01

    申请号：US10449181

    申请日：2003-05-29

    申请人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  David Medeiros ,  Ratnam Sooriyakumaran

    发明人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  David Medeiros ,  Ratnam Sooriyakumaran

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0046 ,  C08F220/24 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0395

    摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

    摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。

    Processes and materials for step and flash imprint lithography
    4.
    发明申请
    Processes and materials for step and flash imprint lithography 有权
    步进和闪光压印光刻的工艺和材料

    公开(公告)号：US20070051697A1

    公开(公告)日：2007-03-08

    申请号：US11219095

    申请日：2005-09-02

    申请人： Richard DiPietro ,  Mark Hart ,  Frances Houle ,  Hiroshi Ito

    发明人： Richard DiPietro ,  Mark Hart ,  Frances Houle ,  Hiroshi Ito

    IPC分类号： B44C1/22

    CPC分类号： G03F7/0755 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0045

    摘要： A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.

    摘要翻译： 一种形成图像的方法。 该方法包括：在基板上的转印层; 在转印层上形成蚀刻阻挡层; 将具有浮雕图案的模板压入蚀刻阻挡层中; 将蚀刻阻挡层暴露于形成具有对应于浮雕图案的厚和薄区域的固化蚀刻阻挡层的光化辐射; 删除模板; 去除固化的蚀刻阻挡层的薄区域; 除去未被蚀刻阻挡层保护的转移层的区域; 除去未被转移层保护的衬底的区域和任何剩余的蚀刻阻挡层; 并去除剩余的转移层。 可以使用溶剂去除转移层，蚀刻阻挡层可以包括脱模剂，并且可以在转移层和蚀刻阻挡层之间形成粘合层。 还描述了反向色调处理。

    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
    7.
    发明申请
    Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions 审中-公开
    氟化乙烯基醚，其共聚物，并用于平版印刷光刻胶组合物

    公开(公告)号：US20060287558A1

    公开(公告)日：2006-12-21

    申请号：US11503356

    申请日：2006-08-10

    申请人： Richard DiPietro ,  Hiroshi Ito

    发明人： Richard DiPietro ,  Hiroshi Ito

    IPC分类号： C07C41/00

    CPC分类号： C07C43/178 ,  C07C43/196 ,  C07C2602/42 ,  C08F16/24 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392

    摘要： Fluorinated vinyl ethers are provided having the structure of formula (I) the structure of formula (I) wherein at least one of X and Y is a fluorine atom, and L, R1, R2, R3, R4 are as defined herein. Also provided are copolymers prepared by radical polymerization of (I) and a second monomer that may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译： 提供具有式（I）结构的式（I）结构的氟化乙烯基醚，其中X和Y中的至少一个是氟原子，L，R 1，R 2， R 2，R 4，R 4如本文所定义。 还提供了通过（I）的自由基聚合和可以不被氟化的第二单体制备的共聚物。 聚合物可用于平版印刷光刻胶组合物，特别是化学增强抗蚀剂。 在优选的实施方案中，聚合物对深紫外（DUV）辐射基本上是透明的，因此可用于DUV平版光刻胶组合物。 还提供了使用该组合物在基板上产生抗蚀剂图像的方法，即在集成电路等的制造中。

    photoresist composition
    8.
    发明申请
    photoresist composition 有权
    光致抗蚀剂组合物

    公开(公告)号：US20060128914A1

    公开(公告)日：2006-06-15

    申请号：US11330659

    申请日：2006-01-12

    申请人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    发明人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    IPC分类号： C08F220/22

    CPC分类号： C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

    摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化的直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或 取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2） ）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Low activation energy photoresists
    9.
    发明申请
    Low activation energy photoresists 有权
    低活化能光刻胶

    公开(公告)号：US20050124774A1

    公开(公告)日：2005-06-09

    申请号：US10729169

    申请日：2003-12-04

    申请人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard Dipietro ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    发明人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard Dipietro ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    IPC分类号： C08F12/20 ,  G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/0046 ,  G03F7/0397

    摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.

    摘要翻译： 提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。 聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯属单体， SUP），和（iii）其组合。 缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。 还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护 保护的羧酸基团。

    Photoresist composition
    10.
    发明申请
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号：US20050019696A1

    公开(公告)日：2005-01-27

    申请号：US10916934

    申请日：2004-08-12

    申请人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    发明人： Robert Allen ,  Gregory Breyta ,  Phillip Brock ,  Richard DiPietro ,  Debra Fenzel-Alexander ,  Carl Larson ,  David Medeiros ,  Dirk Pfeiffer ,  Ratnam Sooriyakumaran ,  Hoa Truong ,  Gregory Wallraff

    IPC分类号： C08F20/22 ,  C08F220/28 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  G03C1/73

    CPC分类号： C08F220/22 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108

    摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物：其中R 1表示氢（H），1至20个碳的直链或支链烷基，或半或全氟化线性 或碳原子数为1〜20的支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基（CF 3）基团的取代的脂族基团，或取代或未取代的芳族基团; 并且其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。