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    System and method for processing an organic memory cell
    3.
    发明申请
    System and method for processing an organic memory cell 有权
    用于处理有机存储单元的系统和方法

    公开(公告)号：US20070090343A1

    公开(公告)日：2007-04-26

    申请号：US11256558

    申请日：2005-10-21

    申请人： Nicolay Yudanov ,  Igor Sokolik ,  Richard Kingsborough ,  William Leonard ,  Suzette Pangrle ,  Nicholas Tripsas ,  Minh Ngo

    发明人： Nicolay Yudanov ,  Igor Sokolik ,  Richard Kingsborough ,  William Leonard ,  Suzette Pangrle ,  Nicholas Tripsas ,  Minh Ngo

    IPC分类号： H01L29/08

    CPC分类号： H01L51/001 ,  C23C16/54 ,  H01J2237/3321 ,  H01L27/285

    摘要： A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.

    摘要翻译： 公开了一种用于处理有机存储单元的系统和方法。 示例性系统可以采用封闭的处理室，可操作以在第一电极上形成钝化层的无源层形成部件和可操作地在被动层上形成有机半导体层的有机半导体层形成部件。 晶片衬底不需要从钝化层形成系统转移到有机半导体层形成系统。 钝化层在形成无源层之后并且在形成有机半导体层之前不暴露于空气。 结果，在薄膜层中不会发生由暴露于空气引起的导电杂质，从而提高了有机存储器件的生产率，质量和可靠性。 该系统可以进一步采用可在有机半导体层上形成第二电极的第二电极形成部件。

    Stackable memory device and organic transistor structure
    6.
    发明申请
    Stackable memory device and organic transistor structure 审中-公开
    可堆叠存储器件和有机晶体管结构

    公开(公告)号：US20070007510A1

    公开(公告)日：2007-01-11

    申请号：US11174881

    申请日：2005-07-05

    申请人： Igor Sokolik ,  Suzette Pangrle ,  Juri Krieger

    发明人： Igor Sokolik ,  Suzette Pangrle ,  Juri Krieger

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0541 ,  H01L27/0688 ,  H01L27/281 ,  H01L27/283

    摘要： In the present electronic structure, a first electronic device includes a first pair of electrodes and an active layer between the first pair of electrodes. An organic transistor is made up of organic material, a source, a drain, and a gate, one of the first pair of electrodes being connected to one of the source and drain of the organic transistor. A second electronic device includes a second pair of electrodes and an active layer between the second pair of electrodes, one of the second pair of electrodes being in contact with an insulating body adjacent the organic transistor.

    摘要翻译： 在本电子结构中，第一电子器件包括第一对电极和第一对电极之间的有源层。 有机晶体管由有机材料，源极，漏极和栅极组成，第一对电极之一连接到有机晶体管的源极和漏极之一。 第二电子器件包括第二对电极和在第二对电极之间的有源层，第二对电极中的一个与邻近有机晶体管的绝缘体接触。

    Memory device with a selection element and a control line in a substantially similar layer
    8.
    发明授权
    Memory device with a selection element and a control line in a substantially similar layer 有权
    具有选择元件和控制线的存储器件在基本相似的层中

    公开(公告)号：US07391064B1

    公开(公告)日：2008-06-24

    申请号：US11001519

    申请日：2004-12-01

    申请人： Nicholas H. Tripsas ,  Suzette Pangrle

    发明人： Nicholas H. Tripsas ,  Suzette Pangrle

    IPC分类号： H01L29/80

    CPC分类号： H01L27/1021 ,  H01L27/101

    摘要： The invention facilitates manufacture of semiconductor memory components by reducing the number of layers required to implement a semiconductor memory device. The invention provides for a selection element to be formed in the same layer as one of the control lines (e.g. one of the wordline and bitline). In one embodiment of the invention, a diode is implemented as the selection element within the same layer as one of the control lines. Production of the selection element within the same layer as one of the wordline and bitline reduces problems associated with vertical stacking, increases device yield and reduces related production costs. The invention also provides an efficient method of producing memory devices with the selection element in the same layer as one of the control lines.

    摘要翻译： 本发明有利于通过减少实现半导体存储器件所需的层数来制造半导体存储器组件。 本发明提供了一种选择元件，其形成在与控制线之一（例如字线和位线之一）相同的层中。 在本发明的一个实施例中，二极管被实现为与控制线之一在同一层内的选择元件。 生产作为字线和位线之一的同一层内的选择元件可减少与垂直堆叠相关的问题，提高了设备​​产量并降低了相关生产成本。 本发明还提供了一种生产存储器件的有效方法，其中选择元件与控制线之一在同一层中。