Apparatus and method for investigating semiconductor wafers
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    发明申请
    Apparatus and method for investigating semiconductor wafers 有权
    用于研究半导体晶片的装置和方法

    公开(公告)号:US20060095228A1

    公开(公告)日:2006-05-04

    申请号:US11282652

    申请日:2005-11-21

    申请人: Robert Wilby

    发明人: Robert Wilby

    IPC分类号: G01B11/02 G01G9/00

    摘要: In order to determine the dielectric constant of a layer deposited on a semiconductor wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighing pan (7) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer (2). Then the layer is deposited on the wafer (2) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.

    摘要翻译: 为了确定沉积在半导体晶片(2)上的层的介电常数,获得了该层的密度。 为了获得该密度,在称重室(4)中称量没有层的晶片(2),其中称重盘(7)在称重平衡面上支撑晶片。 考虑到空气对晶片(2)施加的浮力来确定晶片的重量。 然后将该层沉积在晶片(2)上,重复称重操作。 或者,可以使用参考晶片。 如果层的材料是已知的,则可以使用层的重量来使用厚度测量来获得其密度。 或者,如果密度是已知的,则可以获得厚度。