公开(公告)号：USRE40819E1

公开(公告)日：2009-07-07

申请号：US09438692

申请日：1999-11-11

Applicant: Rodney C. Langley

Inventor： Rodney C. Langley

IPC: H01L23/48

CPC classification number: H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05624 ,  H01L2224/451 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2224/45099

Abstract: A semiconductor device with improved bond pads. The semiconductor device includes bond pads electrically connected to an active circuit in the device and openings formed in the bonding surface of the bond pads. The opening(s) may include recesses extending partially into the bonding surface or channels that extend entirely through the bond pads. Various shapes and configurations of the openings may be used, such as a pattern of channels radiating from the center of the bonding surface, a series of spaced apart rectangular channels arranged parallel to one another, an array of L shaped channels arranged around the center of the bonding surface, or an array of holes.

Abstract translation: 具有改进的接合焊盘的半导体器件。 半导体器件包括与器件中的有源电路电连接的接合焊盘和形成在接合焊盘的接合表面中的开口。 开口可以包括部分地延伸到粘合表面的凹槽或者完全延伸穿过键合垫的通道。 可以使用开口的各种形状和构造，例如从接合表面的中心辐射的通道图案，彼此平行布置的一系列间隔开的矩形通道，围绕中心的L形通道的阵列 接合表面或孔阵列。

公开(公告)号：US5376235A

公开(公告)日：1994-12-27

申请号：US91542

申请日：1993-07-15

Applicant: Rodney C. Langley

Inventor： Rodney C. Langley

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/00

CPC classification number: H01L21/02071

Abstract: A semiconductor wafer is washed in a dilute phosphoric acid solution after the metal features have been patterned and etched, thereby removing substantially all of the residual oxide, chlorine, and/or fluorine contamination which remains on the features. This will substantially eliminate corrosion of the features. The phosphoric acid wash also substantially prevents voids from forming during a subsequent alloy step. The features can include bond pads, vias, contacts, interconnects, etc.

Abstract translation: 在金属特征被图案化和蚀刻之后，在稀磷酸溶液中洗涤半导体晶片，从而基本上除去留在特征上的剩余的氧化物，氯和/或氟污染物。 这将大大消除特征的腐蚀。 磷酸洗涤也基本上防止在随后的合金步骤期间形成空隙。 特征可以包括接合垫，通孔，触点，互连等

公开(公告)号：US06424733B1

公开(公告)日：2002-07-23

申请号：US09118835

申请日：1998-07-20

Applicant: Rodney C. Langley

Inventor： Rodney C. Langley

IPC: G06K900

Abstract: A cluster tool includes an inspection station for inspecting semiconductor wafers. The cluster tool includes a plurality of process/reaction chambers and an inspection chamber coupled thereto. A transport module provides a transport mechanism for transporting the semiconductor wafer from the process/reactio chamber to the inspection chamber. The inspection chamber includes a light source, a light receiver, and an image processor. The light source illuminates the semiconductor wafer with a beam of light and the receiver receives a reflected image. The processor processes the received image to detect a defect and provides a warning signal to an operator when a defect is detected.

公开(公告)号：US06293789B1

公开(公告)日：2001-09-25

申请号：US09550400

申请日：2000-04-14

Applicant: J. Brett Rolfson ,  Rodney C. Langley

Inventor： J. Brett Rolfson ,  Rodney C. Langley

IPC: F27D500

CPC classification number: H01L21/68742 ,  H01L21/67109 ,  H01L21/68757

Abstract: An apparatus for semiconductor processing includes: a) at least one support member comprising an upper surface for supporting a semiconductor wafer; b) a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component; and c) a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance.

Abstract translation: 一种用于半导体处理的设备包括：a）至少一个支撑构件，其包括用于支撑半导体晶片的上表面; b）支撑构件延伸的构件，该构件包括前表面和后表面，支撑构件和构件中的至少一个可相对于支撑构件和构件中的另一个移动，使得支撑构件 可以在前表面上方的升高位置支撑晶片，并且可以将晶片取出到组件中以相对于部件的前表面降低晶片; 以及c）在所述部件后表面下方连接到所述支撑构件的块，当所述支撑构件上表面在所述构件上方延伸到预定距离时，所述块与所述构件背面接合，所述块防止所述支撑构件上表面延伸超过 前表面超过预定距离。

公开(公告)号：US5221414A

公开(公告)日：1993-06-22

申请号：US730483

申请日：1991-07-16

Applicant: Rodney C. Langley ,  James L. Dale

Inventor： Rodney C. Langley ,  James L. Dale

IPC: C23C16/44 ,  H01L21/00

CPC classification number: H01L21/67069 ,  C23C16/4404

Abstract: Extraneous and undesirable particulate matter is suppressed in a reaction chamber for treating semiconductor materials by depositing a thin layer of polymeric or equivalent insulating material over the entire interior surfaces of the reaction chamber prior to any treatment therein of semiconductor wafers or the like. This process is repeated as necessary after the initial treatment of the wafers has begun, and this treatment will typically include the layer deposition and layer etching on the surfaces of the semiconductor wafers. The periodic intervals between subsequent polymer layer deposition within the reaction chamber is selected in proportion to measured etch or deposition rates therein to thereby optimize the stability and uniformity of these etch and deposition rates, while simultaneously maintaining a maximum degree of cleanliness within the reaction chamber and minimizing down time therefor. The above control of particulate tack-down film deposition may be carried out using a novel closed loop control system in which etch and film deposition rates are measured to generate an error signal, and this error signal is used to control a gas flow controller which in turn regulates the frequency of tack-down film deposition within the reaction chamber.

Abstract translation: 在用于处理半导体材料的反应室中，通过在半导体晶片等的任何处理之前在反应室的整个内表面上沉积聚合物或等效绝缘材料的薄层来抑制外来和不期望的颗粒物质。 在开始晶片的初始处理之后根据需要重复该过程，并且该处理通常将包括在半导体晶片的表面上的层沉积和层蚀刻。 反应室内后续的聚合物层沉积之间的周期性间隔与其中测量的蚀刻或沉积速率成比例地选择，从而优化这些蚀刻和沉积速率的稳定性和均匀性，同时保持反应室内的最大清洁度， 最大限度地减少时间。 可以使用新颖的闭环控制系统进行上述的颗粒状沉积膜沉积控制，其中测量蚀刻和膜沉积速率以产生误差信号，并且该误差信号用于控制气体流量控制器， 转向调节反应室内粘着膜沉积的频率。

公开(公告)号：US06838390B2

公开(公告)日：2005-01-04

申请号：US09507465

申请日：2000-02-22

Applicant: Rodney C. Langley ,  David R. Johnson ,  Willard L. Hofer

Inventor： Rodney C. Langley ,  David R. Johnson ,  Willard L. Hofer

IPC: H01L21/00 ,  H01L21/302

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J2237/2001 ,  Y10T279/23

Abstract: A method utilizing a plasma etching machine which comprises a process chamber defining an interior region and including a bottom wall having an aperture and a block disposed in the aperture and including a longitudinally extending bore. A shaft extends through the bore and includes a spider push rod extending longitudinally therethrough. An internally cooled chuck is coupled to the shaft and disposed in the interior region and cooperates with the shaft to define a chamber. A spider is disposed in the chamber and is coupled to the push rod. A lift mechanism is coupled to the shaft and the push rod so that the spider pushes up on a wafer in response to actuation of the lift mechanism. A wafer clamping mechanism is coupled to the push rod if a mechanical clamp is used. In the case of electrostatic clamp the bias applied to the chuck is coupled with the use of a rotational roller to allow the bias to be applied to the chuck for the duration of the etch process. A RF source is needed for ionization of the gas. If the plasma etching machine has RF power applied through the bottom, then a rotational roller is used for this as well and must be isolated from the electrostatic voltage used to clamp the wafer.

公开(公告)号：US06380100B2

公开(公告)日：2002-04-30

申请号：US09859203

申请日：2001-05-15

Applicant: J. Brett Rolfson ,  Rodney C. Langley

Inventor： J. Brett Rolfson ,  Rodney C. Langley

IPC: H01L2131

CPC classification number: H01L21/68742 ,  H01L21/67109 ,  H01L21/68757

Abstract: In one aspect, the invention encompasses an apparatus for semiconductor processing comprising: a) at least one support member comprising an upper surface for supporting a semiconductor wafer; b) a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component; and c) a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance. In other aspects, the invention encompasses semiconductor processing methods, such as, for example, methods utilizing the above-described apparatus.

Abstract translation: 一方面，本发明包括用于半导体处理的装置，包括：a）至少一个支撑构件，其包括用于支撑半导体晶片的上表面; b）支撑构件延伸的构件，该构件包括前表面和后表面，支撑构件和构件中的至少一个可相对于支撑构件和构件中的另一个移动，使得支撑构件 可以在前表面上方的升高位置支撑晶片，并且可以将晶片取出到组件中以相对于部件的前表面降低晶片; 以及c）在所述部件后表面下方连接到所述支撑构件的块，当所述支撑构件上表面在所述构件上方延伸到预定距离时，所述块与所述构件背面接合，所述块防止所述支撑构件上表面延伸超过 前表面超过预定距离。 在其它方面，本发明包括半导体处理方法，例如利用上述装置的方法。

公开(公告)号：US06248671B1

公开(公告)日：2001-06-19

申请号：US09136883

申请日：1998-08-19

Applicant: J. Brett Rolfson ,  Rodney C. Langley

Inventor： J. Brett Rolfson ,  Rodney C. Langley

IPC: H01L21469

CPC classification number: H01L21/68742 ,  H01L21/67109 ,  H01L21/68757

Abstract: In one aspect, the invention encompasses an apparatus for semiconductor processing comprising: a) at least one support member comprising an upper surface for supporting a semiconductor wafer; b) a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component; and c) a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance. In other aspects, the invention encompasses semiconductor processing methods, such as, for example, methods utilizing the above-described apparatus.

Abstract translation: 一方面，本发明包括用于半导体处理的装置，包括：a）至少一个支撑构件，其包括用于支撑半导体晶片的上表面; b）支撑构件延伸的构件，该构件包括前表面和后表面，支撑构件和构件中的至少一个可相对于支撑构件和构件中的另一个移动，使得支撑构件 可以在前表面上方的升高位置支撑晶片，并且可以将晶片取出到组件中以相对于部件的前表面降低晶片; 以及c）在所述部件后表面下方连接到所述支撑构件的块，当所述支撑构件上表面在所述构件上方延伸到预定距离时，所述块与所述构件背面接合，所述块防止所述支撑构件上表面延伸超过 前表面超过预定距离。 在其它方面，本发明包括半导体处理方法，例如利用上述装置的方法。

公开(公告)号：US6080272A

公开(公告)日：2000-06-27

申请号：US074591

申请日：1998-05-08

Applicant: Rodney C. Langley ,  David R. Johnson ,  Willard L. Hofer

Inventor： Rodney C. Langley ,  David R. Johnson ,  Willard L. Hofer

IPC: H01L21/00 ,  C23F1/02 ,  B23B5/22

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J2237/2001 ,  Y10T279/23

Abstract: A plasma etching machine comprises a process chamber defining an interior region and including a bottom wall having an aperture and a block disposed in the aperture and including a longitudinally extending bore. A shaft extends through the bore and includes a spider push rod extending longitudinally therethrough. An internally cooled chuck is coupled to the shaft and disposed in the interior region and cooperates with the shaft to define a chamber. A spider is disposed in the chamber and is coupled to the push rod. A lift mechanism is coupled to the shaft and the push rod so that the spider pushes up on a wafer in response to actuation of the lift mechanism. A wafer clamping mechanism is coupled to the push rod if a mechanical clamp is used. In the case of electrostatic clamp the bias applied to the chuck is coupled with the use of a rotational roller to allow the bias to be applied to the chuck for the duration of the etch process. A RF source is needed for ionization of the gas. If the plasma etching machine has RF power applied through the bottom, then a rotational roller is used for this as well and must be isolated from the electrostatic voltage used to clamp the wafer. A drive motor is coupled to the shaft for rotating the shaft during a plasma etching process.

公开(公告)号：US5789754A

公开(公告)日：1998-08-04

申请号：US699489

申请日：1996-08-19

Applicant: David A. Cathey ,  Rodney C. Langley

Inventor： David A. Cathey ,  Rodney C. Langley

IPC: G01N21/73

CPC classification number: G01N21/73

Abstract: In one aspect, a method of detecting leaks of external atmospheric gases into a plasma reactor comprises monitoring an emission spectra of a plasma within the reactor for the presence of an external atmospheric constituent. In another aspect, a method of detecting an external atmospheric leak in a plasma enhanced reactor comprising detecting photon emission of excited nitrogen present within the reactor. In yet another aspect, a leak detection system of continuously detecting for leaks of external atmospheric gases into a plasma reactor comprises: a) an optical detection apparatus in optical communication with a plasma in the plasma reactor; b) the optical detection apparatus being configured to monitor an emission spectra of the plasma for a signal due to presence of an external atmospheric constituent within the plasma and for a signal due to a non-atmospheric constituent within the plasma; and c) an alarm configured to generate a response when the relative size of the external atmospheric constituent signal to the non-atmospheric constituent signal exceeds a predetermined value.

Abstract translation: 在一个方面，检测外部大气气体进入等离子体反应器的泄漏的方法包括监测反应器内的等离子体的外部大气成分的存在的发射光谱。 在另一方面，一种检测等离子体增强反应器中的外部大气泄漏的方法，包括检测存在于反应器内的受激氮的光子发射。 在另一方面，一种连续地检测外部大气气体进入等离子体反应器的泄漏检测系统包括：a）与等离子体反应器中的等离子体光学连通的光学检测装置; b）光学检测装置被配置为监测由于在等离子体内存在外部大气成分和由于等离子体内的非大气成分引起的信号引起的信号的等离子体的发射光谱; 以及c）被配置为当所述外部大气分量信号相对于所述非大气分量信号的相对大小超过预定值时产生响应的报警。