摘要:
According to one embodiment, an information processing device stores a program list and plural types of security functions each defining therein protection attributes for respective arguments related to input and output of data to be protected, and stores function argument protection attributes and dependency relations each of which is defined by a determinant set and a dependent attribute that satisfy a predetermined condition. The device detects a combination of first and second security functions in which integrity of variables included in a determinant set of one dependency relation in the first security function are verified by the second security function, generates a third security function which adds protection attributes that guarantee integrity to variables included in the dependent attribute of the dependency relation in the first security function when verification of the second security function is successful and which outputs the variables, and updates the function argument protection attribute and the dependency relation concomitantly with an addition of the third security function.
摘要:
The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要:
A resist composition is provided that yields fine resolution, and improved levels of line edge roughness and depth of focus. This composition includes a resin component (A) that undergoes a change in alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) is a resin with a weight average molecular weight of no more than 8,000 containing structural units (a) derived from a (meth)acrylate ester, and the component (B) includes at least one sulfonium compound represented by a general formula (b-1) or a general formula (b-2) shown below.
摘要:
A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (a1) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要:
According to one embodiment, there is provided a an information processing apparatus, including: a program acceptance portion; a program storage portion; a first function type storage portion; a function type extraction portion; a second function type storage portion; a first alternate function type storage portion; an alternate function type extraction portion; a second alternate function type storage portion; a selection portion; a judging portion; an updating portion; and a protection attribute determination portion.
摘要:
The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要:
The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要:
According to one embodiment, an information processing device stores a program list and plural types of security functions each defining therein protection attributes for respective arguments related to input and output of data to be protected, and stores function argument protection attributes and dependency relations each of which is defined by a determinant set and a dependent attribute that satisfy a predetermined condition. The device detects a combination of first and second security functions in which integrity of variables included in a determinant set of one dependency relation in the first security function are verified by the second security function, generates a third security function which adds protection attributes that guarantee integrity to variables included in the dependent attribute of the dependency relation in the first security function when verification of the second security function is successful and which outputs the variables, and updates the function argument protection attribute and the dependency relation concomitantly with an addition of the third security function.
摘要:
A positive resist composition with a broad DOF and a method for resist pattern formation are provided. This composition is a positive resist composition which includes a resin component (A) that exhibits increased alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure, wherein the component (A) is a copolymer that contains n [wherein, n is an integer from 4 to 6] structural units with mutually different structures, and the proportion of each structural unit within the copolymer is greater than 0 mol % but no higher than 100/(n−1) mol %.
摘要翻译:提供了具有宽DOF的正型抗蚀剂组合物和抗蚀剂图案形成方法。 该组合物是含有在酸的作用下表现出提高的碱溶性的树脂组分(A)和暴露时产生酸的酸产生剂组分(B)的正型抗蚀剂组合物,其中组分(A)是含有 n [其中,n为4〜6的整数],结构相互不同的结构单元,共聚物中各结构单元的比例大于0摩尔%,但不高于100 /(n-1)摩尔%。
摘要:
The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.