公开(公告)号：US20150380529A1

公开(公告)日：2015-12-31

申请号：US14831972

申请日：2015-08-21

申请人： SEMICONDUCTOR ENERGY LABORARTORY CO., LTD.

发明人： Atsuo ISOBE ,  Kunio HOSOYA

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/4757 ,  H01L29/51 ,  H01L29/49 ,  H01L21/383 ,  H01L21/425 ,  H01L29/24 ,  H01L29/786 ,  H01L21/441

CPC分类号： H01L29/66969 ,  H01L21/02178 ,  H01L21/02244 ,  H01L21/0237 ,  H01L21/02565 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/10873 ,  H01L27/1108 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/517 ,  H01L29/7869

摘要： To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

摘要翻译： 为了提高包含氧化物半导体的晶体管的生产率，具有良好的电气特性。 在包括氧化物半导体膜上的栅绝缘膜和栅电极的顶栅晶体管中，在氧化物半导体膜上形成金属膜，向金属膜中添加氧以形成金属氧化物膜，并且金属氧化物 膜用作栅极绝缘膜。 在氧化物半导体膜上形成氧化物绝缘膜之后，可以在氧化物绝缘膜上形成金属膜。 向金属膜中添加氧以形成金属氧化物膜，并且还添加到氧化物半导体膜或氧化物绝缘膜。