公开(公告)号：US09876085B2

公开(公告)日：2018-01-23

申请号：US13241962

申请日：2011-09-23

申请人： Sang Jin Park

发明人： Sang Jin Park

IPC分类号： H01L29/417 ,  H01L27/12 ,  H01L29/45 ,  G02F1/1368

CPC分类号： H01L29/41733 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/458

摘要： An array substrate comprises a base substrate on which data lines and gate lines intersecting with each other are formed to define pixel units, and a switching element is provided in each of the pixel units and comprises a gate electrode, an active layer, a source electrode and a drain electrode, and end parts of the source electrode and the drain electrode located directly on the active layer are opposite to each other to define a channel region. An extension conductive part is formed close to the source electrode or the drain electrode and to electrically contact the source electrode or the drain electrode, one end of the extension conductive part extends toward the channel to protrude from the source electrode or the drain electrode contacting with the extension conductive part and to contact the active layer at least within the channel region.

公开(公告)号：US20140071553A1

公开(公告)日：2014-03-13

申请号：US13805029

申请日：2012-11-08

申请人： Sang Jin Park

发明人： Sang Jin Park

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  G02B5/22 ,  H01L27/12

CPC分类号： G02F1/136209 ,  G02B5/22 ,  G02F1/133351 ,  G02F1/133516 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/134318 ,  G02F2001/136236 ,  G02F2201/121 ,  H01L27/1259

摘要： Embodiments of the invention provide a color filter substrate, a TFT array substrate, a manufacturing method of the color filter substrate, a manufacturing method of the TFT array substrate, and a liquid crystal display (LCD) panel. The color filter substrate comprises color filter substrate units of different sizes. The manufacturing method of the color filter substrate comprises: coating a common electrode layer on a base substrate for forming the color filter substrate; and forming common electrodes of different thicknesses for the color filter substrate units of different sizes by a patterning process.

摘要翻译： 本发明的实施例提供一种滤色器基板，TFT阵列基板，滤色器基板的制造方法，TFT阵列基板的制造方法以及液晶显示器（LCD）面板。 滤色器基板包括不同尺寸的滤色器基板单元。 滤色器基板的制造方法包括：在用于形成滤色器基板的基底基板上涂覆公共电极层; 并通过图案化工艺形成不同尺寸的滤色器基板单元的不同厚度的公共电极。

公开(公告)号：USD686152S1

公开(公告)日：2013-07-16

申请号：US29428745

申请日：2012-08-02

申请人： Jeong-Seop Lee ,  Myung-Sook Kwon ,  Sang-Jin Park ,  Nam Sunwoo

设计人： Jeong-Seop Lee ,  Myung-Sook Kwon ,  Sang-Jin Park ,  Nam Sunwoo

公开(公告)号：US08475049B2

公开(公告)日：2013-07-02

申请号：US13137222

申请日：2011-07-28

申请人： Sang Yong Oh ,  Sang Jin Park

发明人： Sang Yong Oh ,  Sang Jin Park

IPC分类号： F16C32/06

CPC分类号： F16C17/026 ,  F16C17/107 ,  F16C33/106 ,  F16C2370/12

摘要： There is provided a fluid dynamic bearing assembly including: a sleeve having a shaft insertedly mounted therein; and upper and lower radial bearing parts formed on at least one of an outer circumferential surface of the shaft and an inner circumferential surface of the sleeve, wherein a clearance between the lower radial bearing part and a surface disposed to face the lower radial bearing part is wider than a clearance between the upper radial bearing part and a surface disposed to face the upper radial bearing part.

摘要翻译： 提供了一种流体动力轴承组件，其包括：套筒，其具有插入其中的轴; 以及形成在所述轴的外周表面和所述套筒的内周表面中的至少一个上的上和下径向轴承部件，其中所述下径向支承部件和设置成面向所述下径向支承部件的表面之间的间隙是 比上部径向轴承部分和设置成面向上部径向轴承部分的表面之间的间隙宽。

公开(公告)号：USD684531S1

公开(公告)日：2013-06-18

申请号：US29417929

申请日：2012-04-10

申请人： Dae-Yon Moon ,  Sang-Jin Park

设计人： Dae-Yon Moon ,  Sang-Jin Park

公开(公告)号：USD684530S1

公开(公告)日：2013-06-18

申请号：US29417928

申请日：2012-04-10

申请人： Dae-Yon Moon ,  Sang-Jin Park

设计人： Dae-Yon Moon ,  Sang-Jin Park

公开(公告)号：US20130095364A1

公开(公告)日：2013-04-18

申请号：US13475838

申请日：2012-05-18

申请人： Jun-Sun Yong ,  Chang-Seob Kim ,  Sang-Jin Lee ,  Sae-Weon Roh ,  Sang-Jin Park

发明人： Jun-Sun Yong ,  Chang-Seob Kim ,  Sang-Jin Lee ,  Sae-Weon Roh ,  Sang-Jin Park

IPC分类号： H01M2/30 ,  H01M10/50 ,  H01M2/02

CPC分类号： H01M2/02 ,  H01M2/04 ,  H01M2/0404 ,  H01M2/0473 ,  H01M2/06 ,  H01M2/30 ,  H01M2/34

摘要： A secondary battery including: an electrode assembly; a case containing the electrode assembly; a cap plate covering an opening of the case; a safety device on the cap plate and including a first lead; and an electrode terminal electrically connecting the electrode assembly and the first lead, the cap plate including a conductive member and an insulating portion, and the first lead is supported on the insulating portion, and the conductive member and the insulating portion being integrally formed.

摘要翻译： 一种二次电池，包括：电极组件; 包含电极组件的壳体; 覆盖所述壳体的开口的盖板; 盖板上的安全装置，包括第一引线; 以及电极端子，其电连接所述电极组件和所述第一引线，所述盖板包括导电构件和绝缘部，所述第一引线被支撑在所述绝缘部上，并且所述导电构件和所述绝缘部一体地形成。

公开(公告)号：US20130004406A1

公开(公告)日：2013-01-03

申请号：US13227862

申请日：2011-09-08

申请人： Sung Yeup Chung ,  Yoon Ji Lee ,  Sang Jin Park ,  Ki Chun Lee

发明人： Sung Yeup Chung ,  Yoon Ji Lee ,  Sang Jin Park ,  Ki Chun Lee

IPC分类号： C01B31/20 ,  B01D53/62

CPC分类号： B01D53/62 ,  B01D53/1425 ,  B01D53/1475 ,  B01D53/96 ,  B01D2252/103 ,  B01D2252/202 ,  B01D2252/204 ,  Y02A50/2342 ,  Y02C10/04 ,  Y02C10/06

摘要： Disclosed is a method for recovering carbon dioxide from exhaust gas, more particularly, a method for recovering carbon dioxide from exhaust gas for saving the cost for recovery of carbon dioxide by decreasing energy required for recycling a carbon dioxide absorbent solution. In particular, a circulating solvent, whose heat of vaporization and/or sensible heat is lower than that of a solvent of an absorbent solution introduced to a recycling tower, is supplied to the lower portion of the recycling tower and mixed with the heated absorbent solution. As a result, the pressure inside the recycling tower is maintained so that carbon dioxide released from the absorbent solution is discharged to a storage tank/drum.

公开(公告)号：US20120306303A1

公开(公告)日：2012-12-06

申请号：US13427799

申请日：2012-03-22

申请人： Young Tae KIM ,  Sang Jin PARK ,  Won Ki PARK ,  Ik Sun LEE

发明人： Young Tae KIM ,  Sang Jin PARK ,  Won Ki PARK ,  Ik Sun LEE

IPC分类号： H02K7/08

CPC分类号： F16C17/107 ,  F16C17/026 ,  F16C33/107 ,  F16C2370/12

摘要： Disclosed herein is a spindle motor including a rotating part including a rotating shaft, a hub, and a magnet and a fixing part including a sleeve supporting the rotating shaft and an armature opposite to the magnet, wherein a working fluid is injected between the rotating shaft and the sleeve so as to form a fluid dynamic bearing part, and the sleeve is as a sintered sleeve by sintering and a top and a bottom of an inner peripheral surface of the sleeve is protruded toward the rotating shaft, whereby the spindle motor improving dynamic pumping capability and extending a span of a radial bearing part to a top end and a bottom end of the sleeve as compared with the spindle motor according to the prior art can be provided.

摘要翻译： 这里公开了一种主轴电动机，其包括：旋转部，包括旋转轴，轮毂和磁体;以及固定部，包括支撑旋转轴的套筒和与磁铁相反的电枢，其中工作流体被注入到旋转轴 和套筒形成流体动力轴承部，套筒通过烧结作为烧结套筒，套筒的内周面的顶部和底部朝向旋转轴突出，由此主轴电机改善动态 可以提供与根据现有技术的主轴电机相比，泵送能力并将径向轴承部分的跨度延伸到套筒的顶端和底端。

公开(公告)号：US08241979B2

公开(公告)日：2012-08-14

申请号：US12805825

申请日：2010-08-20

申请人： Sang-Jin Park ,  Kong-Soo Lee ,  Yong-Woo Hyung ,  Young-Sub You ,  Jae-Jong Han

发明人： Sang-Jin Park ,  Kong-Soo Lee ,  Yong-Woo Hyung ,  Young-Sub You ,  Jae-Jong Han

IPC分类号： H01L21/8234

CPC分类号： H01L45/143 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1021 ,  H01L27/2409 ,  H01L29/66136 ,  H01L29/66204 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

摘要： A method of forming a vertical diode and a method of manufacturing a semiconductor device (e.g., a semiconductor memory device such as a phase-change memory device) includes forming an insulating structure having an opening on a substrate and filling the opening with an amorphous silicon layer. A metal silicide layer is formed to contact at least a portion of the amorphous silicon layer and a polysilicon layer is then formed in the opening by crystallizing the amorphous silicon layer using the metal silicide layer. A doped polysilicon layer is formed by implanting impurities into the polysilicon layer. Thus, the polysilicon layer is formed in the opening without performing a selective epitaxial growth (SEG) process, so that electrical characteristics of the diode may be improved.

摘要翻译： 形成垂直二极管的方法和制造半导体器件（例如，诸如相变存储器件的半导体存储器件）的方法包括：在衬底上形成具有开口的绝缘结构，并用非晶硅填充该开口 层。 形成金属硅化物层以接触非晶硅层的至少一部分，然后通过使用金属硅化物层使非晶硅层结晶而在开口中形成多晶硅层。 通过将杂质注入到多晶硅层中形成掺杂多晶硅层。 因此，在开口中形成多晶硅层，而不进行选择性外延生长（SEG）工艺，从而可以提高二极管的电特性。