Abstract:
An optical system is provided which includes an illumination system with a light source, a lens member which guides light from the light source, and a mirror member; an image unit on which an image is formed and on which light from the illumination system is incident; a projection system which magnifies and projects the image formed on the image unit; and a blocking unit which is mounted to the mirror member of the illumination system and partially blocks light from the light source that is directed to the mirror member.
Abstract:
An optical system is provided which includes an illumination system with a light source, a lens member which guides light from the light source, and a mirror member; an image unit on which an image is formed and on which light from the illumination system is incident; a projection system which magnifies and projects the image formed on the image unit; and a blocking unit which is mounted to the mirror member of the illumination system and partially blocks light from the light source that is directed to the mirror member.
Abstract:
A light emitting diode (LED) module includes a plurality of LEDs which emit light, and a metal substrate on which the LEDs are mounted and which includes a fixing part to be directly fixed to an outer frame, wherein the metal substrate is a heat sink that absorbs heat generated by the LEDs.
Abstract:
A projection type image display apparatus includes: a cabinet; a screen which is provided in the cabinet; a display device which is placed inside the cabinet and forms an image; and an optical system which projects an image formed by the display device to the screen and comprises at least one mirror, a supporter for supporting the mirror, and a frame through which the supporter is fastened to the cabinet, all of the mirror, the supporter and the frame being disposed within a single interior space formed by the cabinet and the screen.
Abstract:
A method for fabricating a semiconductor device includes the steps of: (a) forming a plurality of conductive patterns on a substrate in a cell region and a peripheral circuit region; (b) forming an insulation layer on an entire surface of the resulting structure from the step. (a); (c) forming a plurality of plugs in the cell region and simultaneously forming a dummy pattern in a region between the cell region and the peripheral circuit region, each plug and the dummy pattern being contacted to the substrate allocated between the conductive patterns by passing through the insulation layer; (d) forming a photoresist pattern masking the resulting structure in the cell region; and (e) removing the insulation layer in the peripheral circuit region by performing a wet etching process with use of the photoresist pattern as an etch mask to thereby expose a surface of the substrate in the peripheral circuit region.
Abstract:
The present invention relates to a method for fabricating a semiconductor device with realizable advanced fine patterns. The method includes the steps of: forming a hard mask insulation layer on an etch target layer; forming a hard mask sacrificial layer on the hard mask insulation layer; coating a photoresist on the hard mask insulation layer; performing selectively a photo-exposure process and a developing process to form a photoresist pattern having a first width for forming a line pattern; etching selectively the hard mask sacrificial layer by using the photoresist pattern as an etch mask to form a sacrificial hard mask having a second width; removing the photoresist pattern; etching the hard mask insulation layer by controlling excessive etching conditions with use of the sacrificial hard mask as an etch mask to form a hard mask having a third width; and etching the etch target layer by using the sacrificial hard mask and the hard mask as an etch mask to form the line pattern having a fourth width, wherein the first width is wider than the fourth width.
Abstract:
A method for forming a photoresist pattern with minimally reduced transformations through the use of ArF photolithography, including the steps of: forming an organic anti-reflective coating layer on a an etch-target layer already formed on a substrate; coating a photoresist for ArF on the organic anti-reflective coating layer; exposing the photoresist with ArF laser; forming a first photoresist pattern by developing the photoresist, wherein portions of the organic anti-reflective coating layer are revealed; etching the organic anti-reflective coating layer with the first photoresist pattern as an etch mask and forming a second photoresist pattern by attaching polymer to the first photoresist pattern, wherein the polymer is generated during etching the organic anti-reflection coating layer with an etchant including O2 plasma; and etching the etch-target layer by using the second photoresist pattern as an etch mask.
Abstract translation:一种通过使用ArF光刻形成具有最小化转换的光致抗蚀剂图案的方法,包括以下步骤:在已经形成在衬底上的蚀刻靶层上形成有机抗反射涂层; 在有机抗反射涂层上涂覆ArF的光致抗蚀剂; 用ArF激光曝光光刻胶; 通过显影光致抗蚀剂形成第一光致抗蚀剂图案,其中露出有机抗反射涂层的部分; 用第一光致抗蚀剂图案蚀刻有机抗反射涂层作为蚀刻掩模,并通过将聚合物附着到第一光致抗蚀剂图案上形成第二光致抗蚀剂图案,其中在用有蚀刻剂的腐蚀剂蚀刻有机抗反射涂层时产生聚合物,包括 O 2等离子体; 以及通过使用第二光致抗蚀剂图案作为蚀刻掩模蚀刻蚀刻目标层。
Abstract:
A method for manufacturing a semiconductor memory device includes the steps of forming a mask layer on a target layer to be etched, coating a photoresist on the mask layer, exposing the photoresist by using a light resource whose wavelength is of about 157 nm to 193 nm, forming a photoresist pattern by developing the photoresist, forming a mask pattern by selectively etching the mask layer with an etching gas except of fluorine-based gases by using the photoresist pattern as an etching mask; and selectively etching the target layer by using the mask pattern as an etching mask.
Abstract:
Provided is a method for forming a self aligned contact (SAC) of a semiconductor device that can minimize the loss of gate electrodes and hard mask. The method includes the steps of: providing a semiconductor substrate on which a plurality of conductive patterns are formed; forming a first insulation layer along the profile of the conductive patterns on the substrate; forming a second insulation layer on the substrate and simultaneously forming voids between the conductive patterns; forming a third insulation layer on the first insulation layer; and forming contact holes that expose the surface of the substrate between the conductive patterns by etching the third insulation layer and the second insulation layer covering the voids.
Abstract:
An optical system includes a lens assembly fixed to a base for projecting an image light onto a surface; a DMD assembly movably disposed at one side of the lens assembly for reflecting the light irradiated from a light source onto the lens assembly; supporting members disposed at the one side of the lens assembly for supporting the DMD assembly; and an adjuster for moving the DMD assembly to adjust a tilt. The adjuster includes a guide member having a screw hole and fixed to the base; an adjusting screw driven into the screw hole for moving the DMD assembly along a lengthwise direction of the guide member; and a push rod having an end connected to the DMD assembly and another end connected to the adjusting screw. The DMD assembly is movable by adjusting the adjusting screw so that a tilt angle can be easily and precisely adjusted.