Optical system including a blocking unit
    1.
    发明授权
    Optical system including a blocking unit 有权
    光学系统包括一个阻挡单元

    公开(公告)号:US08388148B2

    公开(公告)日:2013-03-05

    申请号:US12772421

    申请日:2010-05-03

    CPC classification number: G03B21/2066 G03B21/208

    Abstract: An optical system is provided which includes an illumination system with a light source, a lens member which guides light from the light source, and a mirror member; an image unit on which an image is formed and on which light from the illumination system is incident; a projection system which magnifies and projects the image formed on the image unit; and a blocking unit which is mounted to the mirror member of the illumination system and partially blocks light from the light source that is directed to the mirror member.

    Abstract translation: 提供了一种光学系统,其包括具有光源的照明系统,引导来自光源的光的透镜构件和镜构件; 图像单元,其上形成有来自照明系统的光入射的图像; 投影系统,其放大并投射形成在图像单元上的图像; 以及安装到照明系统的镜构件并且部分地阻挡来自被引导到镜构件的光源的光的阻挡单元。

    OPTICAL SYSTEM
    2.
    发明申请
    OPTICAL SYSTEM 有权
    光学系统

    公开(公告)号:US20110001939A1

    公开(公告)日:2011-01-06

    申请号:US12772421

    申请日:2010-05-03

    CPC classification number: G03B21/2066 G03B21/208

    Abstract: An optical system is provided which includes an illumination system with a light source, a lens member which guides light from the light source, and a mirror member; an image unit on which an image is formed and on which light from the illumination system is incident; a projection system which magnifies and projects the image formed on the image unit; and a blocking unit which is mounted to the mirror member of the illumination system and partially blocks light from the light source that is directed to the mirror member.

    Abstract translation: 提供了一种光学系统,其包括具有光源的照明系统,引导来自光源的光的透镜构件和镜构件; 图像单元,其上形成有来自照明系统的光入射的图像; 投影系统,其放大并投射形成在图像单元上的图像; 以及安装到照明系统的镜构件并且部分地阻挡来自被引导到镜构件的光源的光的阻挡单元。

    PROJECTION TYPE IMAGE DISPLAY APPARATUS
    4.
    发明申请
    PROJECTION TYPE IMAGE DISPLAY APPARATUS 失效
    投影类型图像显示设备

    公开(公告)号:US20090141246A1

    公开(公告)日:2009-06-04

    申请号:US12128147

    申请日:2008-05-28

    CPC classification number: G03B21/16 G03B21/10 G03B21/28 H04N9/3141

    Abstract: A projection type image display apparatus includes: a cabinet; a screen which is provided in the cabinet; a display device which is placed inside the cabinet and forms an image; and an optical system which projects an image formed by the display device to the screen and comprises at least one mirror, a supporter for supporting the mirror, and a frame through which the supporter is fastened to the cabinet, all of the mirror, the supporter and the frame being disposed within a single interior space formed by the cabinet and the screen.

    Abstract translation: 投影型图像显示装置包括:机柜; 设在机柜内的屏幕; 显示装置,其放置在所述机壳内并形成图像; 以及光学系统,其将由显示装置形成的图像投射到屏幕,并且包括至少一个反射镜,用于支撑反射镜的支撑件和支撑件被固定到机壳的框架,所有的反射镜,支撑件 并且框架设置在由机壳和屏幕形成的单个内部空间内。

    Method for fabricating semiconductor device
    5.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07179744B2

    公开(公告)日:2007-02-20

    申请号:US10617182

    申请日:2003-07-11

    CPC classification number: H01L27/105 H01L21/31111 H01L27/1052

    Abstract: A method for fabricating a semiconductor device includes the steps of: (a) forming a plurality of conductive patterns on a substrate in a cell region and a peripheral circuit region; (b) forming an insulation layer on an entire surface of the resulting structure from the step. (a); (c) forming a plurality of plugs in the cell region and simultaneously forming a dummy pattern in a region between the cell region and the peripheral circuit region, each plug and the dummy pattern being contacted to the substrate allocated between the conductive patterns by passing through the insulation layer; (d) forming a photoresist pattern masking the resulting structure in the cell region; and (e) removing the insulation layer in the peripheral circuit region by performing a wet etching process with use of the photoresist pattern as an etch mask to thereby expose a surface of the substrate in the peripheral circuit region.

    Abstract translation: 一种制造半导体器件的方法包括以下步骤:(a)在单元区域和外围电路区域中的衬底上形成多个导电图案; (b)从所述台阶在所得结构的整个表面上形成绝缘层。 (一个); (c)在单元区域中形成多个插塞,并且在单元区域和外围电路区域之间的区域中同时形成虚设图案,每个插头和虚设图案通过穿过与导电图案之间分配的基板接触 绝缘层; (d)形成掩蔽所述细胞区域中的所得结构的光致抗蚀剂图案; 和(e)通过使用光致抗蚀剂图案作为蚀刻掩模进行湿式蚀刻处理,从而在外围电路区域中露出基板的表面,从而去除外围电路区域中的绝缘层。

    Method for fabricating semiconductor device with fine patterns
    6.
    发明授权
    Method for fabricating semiconductor device with fine patterns 失效
    具有精细图案的半导体器件的制造方法

    公开(公告)号:US07037850B2

    公开(公告)日:2006-05-02

    申请号:US10728775

    申请日:2003-12-08

    CPC classification number: H01L21/32139 H01L21/3081

    Abstract: The present invention relates to a method for fabricating a semiconductor device with realizable advanced fine patterns. The method includes the steps of: forming a hard mask insulation layer on an etch target layer; forming a hard mask sacrificial layer on the hard mask insulation layer; coating a photoresist on the hard mask insulation layer; performing selectively a photo-exposure process and a developing process to form a photoresist pattern having a first width for forming a line pattern; etching selectively the hard mask sacrificial layer by using the photoresist pattern as an etch mask to form a sacrificial hard mask having a second width; removing the photoresist pattern; etching the hard mask insulation layer by controlling excessive etching conditions with use of the sacrificial hard mask as an etch mask to form a hard mask having a third width; and etching the etch target layer by using the sacrificial hard mask and the hard mask as an etch mask to form the line pattern having a fourth width, wherein the first width is wider than the fourth width.

    Abstract translation: 本发明涉及一种制造具有可实现的高精细图案的半导体器件的方法。 该方法包括以下步骤:在蚀刻目标层上形成硬掩模绝缘层; 在硬掩模绝缘层上形成硬掩模牺牲层; 在硬掩模绝缘层上涂覆光致抗蚀剂; 选择性地执行光曝光处理和显影处理,以形成具有用于形成线图案的第一宽度的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模来选择性地蚀刻硬掩模牺牲层以形成具有第二宽度的牺牲硬掩模; 去除光致抗蚀剂图案; 通过使用牺牲硬掩模作为蚀刻掩模通过控制过多的蚀刻条件来蚀刻硬掩模绝缘层,以形成具有第三宽度的硬掩模; 以及通过使用所述牺牲硬掩模和所述硬掩模作为蚀刻掩模来蚀刻所述蚀刻目标层,以形成具有第四宽度的所述线图案,其中所述第一宽度宽于所述第四宽度。

    Method for forming pattern using argon fluoride photolithography
    7.
    发明授权
    Method for forming pattern using argon fluoride photolithography 失效
    使用氩氟化物光刻法形成图案的方法

    公开(公告)号:US06933236B2

    公开(公告)日:2005-08-23

    申请号:US10306084

    申请日:2002-11-27

    Abstract: A method for forming a photoresist pattern with minimally reduced transformations through the use of ArF photolithography, including the steps of: forming an organic anti-reflective coating layer on a an etch-target layer already formed on a substrate; coating a photoresist for ArF on the organic anti-reflective coating layer; exposing the photoresist with ArF laser; forming a first photoresist pattern by developing the photoresist, wherein portions of the organic anti-reflective coating layer are revealed; etching the organic anti-reflective coating layer with the first photoresist pattern as an etch mask and forming a second photoresist pattern by attaching polymer to the first photoresist pattern, wherein the polymer is generated during etching the organic anti-reflection coating layer with an etchant including O2 plasma; and etching the etch-target layer by using the second photoresist pattern as an etch mask.

    Abstract translation: 一种通过使用ArF光刻形成具有最小化转换的光致抗蚀剂图案的方法,包括以下步骤:在已经形成在衬底上的蚀刻靶层上形成有机抗反射涂层; 在有机抗反射涂层上涂覆ArF的光致抗蚀剂; 用ArF激光曝光光刻胶; 通过显影光致抗蚀剂形成第一光致抗蚀剂图案,其中露出有机抗反射涂层的部分; 用第一光致抗蚀剂图案蚀刻有机抗反射涂层作为蚀刻掩模,并通过将聚合物附着到第一光致抗蚀剂图案上形成第二光致抗蚀剂图案,其中在用有蚀刻剂的腐蚀剂蚀刻有机抗反射涂层时产生聚合物,包括 O 2等离子体; 以及通过使用第二光致抗蚀剂图案作为蚀刻掩模蚀刻蚀刻目标层。

    Method for manufacturing semiconductor memory device by using photoresist pattern exposed with ArF laser beam
    8.
    发明授权
    Method for manufacturing semiconductor memory device by using photoresist pattern exposed with ArF laser beam 失效
    通过使用用ArF激光束曝光的光致抗蚀剂图案制造半导体存储器件的方法

    公开(公告)号:US06709986B2

    公开(公告)日:2004-03-23

    申请号:US10175574

    申请日:2002-06-19

    Abstract: A method for manufacturing a semiconductor memory device includes the steps of forming a mask layer on a target layer to be etched, coating a photoresist on the mask layer, exposing the photoresist by using a light resource whose wavelength is of about 157 nm to 193 nm, forming a photoresist pattern by developing the photoresist, forming a mask pattern by selectively etching the mask layer with an etching gas except of fluorine-based gases by using the photoresist pattern as an etching mask; and selectively etching the target layer by using the mask pattern as an etching mask.

    Abstract translation: 一种制造半导体存储器件的方法包括以下步骤:在待蚀刻的目标层上形成掩模层,在掩模层上涂覆光致抗蚀剂,通过使用波长约157nm至193nm的光源曝光光致抗蚀剂 通过显影光致抗蚀剂形成光致抗蚀剂图案,通过使用光致抗蚀剂图案作为蚀刻掩模,用除了氟基气体之外的蚀刻气体选择性地蚀刻掩模层来形成掩模图案; 并且通过使用掩模图案作为蚀刻掩模来选择性地蚀刻目标层。

    Method for fabricating semiconductor device
    9.
    发明授权
    Method for fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US06703314B2

    公开(公告)日:2004-03-09

    申请号:US10308139

    申请日:2002-12-03

    CPC classification number: H01L21/76897 H01L21/31116 H01L21/7682

    Abstract: Provided is a method for forming a self aligned contact (SAC) of a semiconductor device that can minimize the loss of gate electrodes and hard mask. The method includes the steps of: providing a semiconductor substrate on which a plurality of conductive patterns are formed; forming a first insulation layer along the profile of the conductive patterns on the substrate; forming a second insulation layer on the substrate and simultaneously forming voids between the conductive patterns; forming a third insulation layer on the first insulation layer; and forming contact holes that expose the surface of the substrate between the conductive patterns by etching the third insulation layer and the second insulation layer covering the voids.

    Abstract translation: 提供一种用于形成可以最小化栅电极和硬掩模的损耗的半导体器件的自对准接触(SAC)的方法。 该方法包括以下步骤:提供其上形成有多个导电图案的半导体衬底; 沿着衬底上的导电图案的轮廓形成第一绝缘层; 在所述基板上形成第二绝缘层,同时在所述导电图案之间形成空隙; 在所述第一绝缘层上形成第三绝缘层; 以及形成通过蚀刻所述第三绝缘层和覆盖所述空隙的所述第二绝缘层而在所述导电图案之间暴露所述基板的表面的接触孔。

    Optical system for projection television
    10.
    发明授权
    Optical system for projection television 失效
    投影电视的光学系统

    公开(公告)号:US07265798B2

    公开(公告)日:2007-09-04

    申请号:US10461406

    申请日:2003-06-16

    Applicant: Sang-ik Kim

    Inventor: Sang-ik Kim

    CPC classification number: H04N9/3141

    Abstract: An optical system includes a lens assembly fixed to a base for projecting an image light onto a surface; a DMD assembly movably disposed at one side of the lens assembly for reflecting the light irradiated from a light source onto the lens assembly; supporting members disposed at the one side of the lens assembly for supporting the DMD assembly; and an adjuster for moving the DMD assembly to adjust a tilt. The adjuster includes a guide member having a screw hole and fixed to the base; an adjusting screw driven into the screw hole for moving the DMD assembly along a lengthwise direction of the guide member; and a push rod having an end connected to the DMD assembly and another end connected to the adjusting screw. The DMD assembly is movable by adjusting the adjusting screw so that a tilt angle can be easily and precisely adjusted.

    Abstract translation: 光学系统包括固定到基座的透镜组件,用于将图像光投影到表面上; 可移动地设置在透镜组件的一侧的DMD组件,用于将从光源照射的光反射到透镜组件上; 设置在所述透镜组件的一侧以支撑所述DMD组件的支撑构件; 以及用于移动DMD组件以调整倾斜的调节器。 调节器包括具有螺钉孔并固定到基座的引导构件; 驱动到螺钉孔中的调节螺钉,用于沿着引导构件的长度方向移动DMD组件; 以及推杆,其端部连接到DMD组件,另一端连接到调节螺钉。 DMD组件通过调节调节螺钉可移动,从而可以容易且精确地调整倾斜角度。

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