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    METAL COMPOUND, MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH, AND PROCESS FOR FORMING METAL-CONTAINING THIN FILM
    1.
    发明申请
    METAL COMPOUND, MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH, AND PROCESS FOR FORMING METAL-CONTAINING THIN FILM 有权
    金属化合物，化学气相生长材料和形成含金属薄膜的方法

    公开(公告)号：US20100247765A1

    公开(公告)日：2010-09-30

    申请号：US12740188

    申请日：2008-10-22

    申请人： Naoki Yamada ,  Atsuya Yoshinaka ,  Senji Wada

    发明人： Naoki Yamada ,  Atsuya Yoshinaka ,  Senji Wada

    IPC分类号： C23C16/34 ,  C23C16/44 ,  C07F7/28 ,  C07F7/00

    CPC分类号： C23C16/45553 ,  C07F7/003 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40

    摘要： A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.

    摘要翻译： 通式（1）的新型金属化合物，含有化合物的化学气相生长材料，以及使用该材料通过化学气相生长形成含金属薄膜的方法。 在式（1）的化合物中，由于成本低，挥发性高，因此优选X为氯原子的化合物。 当M是钛时，其中m为1的那些是优选的，在挥发温度（蒸气温度）和沉积温度（反应温度）之间具有更大的差异，这提供了更宽的加工余量。 在式（1）中，M是钛，锆或铪; X是卤原子; m为1或2。

    Alkoxide compound and raw material for forming thin film
    4.
    发明授权
    Alkoxide compound and raw material for forming thin film 有权

    公开(公告)号：US10118940B2

    公开(公告)日：2018-11-06

    申请号：US14115495

    申请日：2012-05-15

    申请人： Senji Wada ,  Akio Saito ,  Tomoharu Yoshino

    发明人： Senji Wada ,  Akio Saito ,  Tomoharu Yoshino

    IPC分类号： C07F15/04 ,  C23C16/06 ,  C23C16/40 ,  C23C16/455 ,  C07C215/08

    摘要： An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.

    Metal compound, material for chemical vapor phase growth, and process for forming metal-containing thin film
    5.
    发明授权
    Metal compound, material for chemical vapor phase growth, and process for forming metal-containing thin film 有权
    金属化合物，用于化学气相生长的材料，以及用于形成含金属薄膜的工艺

    公开(公告)号：US08357815B2

    公开(公告)日：2013-01-22

    申请号：US12740188

    申请日：2008-10-22

    申请人： Naoki Yamada ,  Atsuya Yoshinaka ,  Senji Wada

    发明人： Naoki Yamada ,  Atsuya Yoshinaka ,  Senji Wada

    IPC分类号： C07F7/00 ,  C23C16/00

    CPC分类号： C23C16/45553 ,  C07F7/003 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40

    摘要： A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.

    摘要翻译： 通式（1）的新型金属化合物，含有化合物的化学气相生长材料，以及使用该材料通过化学气相生长形成含金属薄膜的方法。 在式（1）的化合物中，由于成本低，挥发性高，因此优选X为氯原子的化合物。 当M是钛时，其中m为1的那些是优选的，在挥发温度（蒸气温度）和沉积温度（反应温度）之间具有更大的差异，这提供了更宽的加工余量。 在式（1）中，M是钛，锆或铪; X是卤原子; m为1或2。