公开(公告)号：US20170104000A1

公开(公告)日：2017-04-13

申请号：US15291662

申请日：2016-10-12

申请人： Joo-Hee PARK ,  Jong-Min LEE ,  Seon-Kyung KIM ,  Kee-Jeong RHO ,  Jin-hyun SHIN ,  Jong-Hyun PARK ,  Jin-Yeon WON

发明人： Joo-Hee PARK ,  Jong-Min LEE ,  Seon-Kyung KIM ,  Kee-Jeong RHO ,  Jin-hyun SHIN ,  Jong-Hyun PARK ,  Jin-Yeon WON

IPC分类号： H01L27/115 ,  H01L23/528

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

摘要： A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that vertical to a top surface of the substrate, a plurality of gate lines and a conductive line on the substrate. The gate lines are stacked on top of each other. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction. The conductive line cuts the gate lines along the first direction. A width of the conductive line is periodically and repeatedly changed.

公开(公告)号：US09972639B2

公开(公告)日：2018-05-15

申请号：US15066415

申请日：2016-03-10

申请人： Ju Hak Song ,  Seon Kyung Kim

发明人： Ju Hak Song ,  Seon Kyung Kim

IPC分类号： H01L29/76 ,  H01L27/11582 ,  H01L23/532 ,  H01L23/485 ,  H01L21/764 ,  H01L27/11556 ,  H01L23/522

CPC分类号： H01L27/11582 ,  H01L21/764 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/11556

摘要： A semiconductor device includes a substrate, gate electrodes and interlayer insulating layers alternately stacked on the substrate, channel regions penetrating through the gate electrodes and the interlayer insulating layers, a conductive layer penetrating through the gate electrodes and the interlayer insulating layers, an insulating layer covering an upper surface of the conductive layer, a contact plug penetrating through the insulating layer and connected to the conductive layer, and an air gap formed in the conductive layer. The conductive layer is connected to the substrate and extends between two groups of the channel regions. The air gap is defined by the contact plug, insulating layer and an inner sidewall of the conductive layer.

公开(公告)号：US20160336340A1

公开(公告)日：2016-11-17

申请号：US15066415

申请日：2016-03-10

申请人： Ju Hak Song ,  Seon Kyung Kim

发明人： Ju Hak Song ,  Seon Kyung Kim

IPC分类号： H01L27/115 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L27/11582 ,  H01L21/764 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/11556

摘要： A semiconductor device includes a substrate, gate electrodes and interlayer insulating layers alternately stacked on the substrate, channel regions penetrating through the gate electrodes and the interlayer insulating layers, a conductive layer penetrating through the gate electrodes and the interlayer insulating layers, an insulating layer covering an upper surface of the conductive layer, a contact plug penetrating through the insulating layer and connected to the conductive layer, and an air gap formed in the conductive layer. The conductive layer is connected to the substrate and extends between two groups of the channel regions. The air gap is defined by the contact plug, insulating layer and an inner sidewall of the conductive layer.

摘要翻译： 半导体器件包括交替层叠在基板上的基板，栅极电极和层间绝缘层，穿过栅极电极和层间绝缘层的沟道区域，贯穿栅电极和层间绝缘层的导电层，绝缘层覆盖层 导电层的上表面，穿过绝缘层并连接到导电层的接触插塞和形成在导电层中的气隙。 导电层连接到衬底并在两组通道区域之间延伸。 气隙由接触塞，绝缘层和导电层的内侧壁限定。