Abstract:
Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.
Abstract:
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that vertical to a top surface of the substrate, a plurality of gate lines and a conductive line on the substrate. The gate lines are stacked on top of each other. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction. The conductive line cuts the gate lines along the first direction. A width of the conductive line is periodically and repeatedly changed.
Abstract:
A method and apparatus are provided for displaying a 3D image using a 2D image in an electronic device. Information related to an inclination of the electronic device is detected from a motion of the electronic device. The 3D image is generated by moving each of a plurality of image layers, which are derived from the 2D image, based on the detected information and motion parallax corresponding to the detected information. The 3D image is displayed.
Abstract:
In a mobile terminal, user search information used in a Location Based Service (LBS) application is stored. A user search pattern is determined from the user search information. User search pattern information corresponding to search condition data is extracted and displayed when the search condition data are input in a search pattern mode of the LBS application.
Abstract:
An apparatus and method for supporting an eraser function of a digitizer pen in a digitizer system are provided. The method includes, if it is recognized that an eraser part of the digitizer pen gets contact on a reception device, determining a pressure of the eraser part contacting on a surface of the reception device and, according to the determined pressure, changing a frequency transmitted to the reception device.
Abstract:
The gait rehabilitation robot having a passive mechanism includes: a first auxiliary link member connected to a portion between the pelvis and the knee of a rehabilitating person; a joint coupled to a lower end of the first auxiliary link member; a second auxiliary link member coupled to the lower end of the joint and connected to a portion between the pelvis and the knee of the rehabilitating person; a first spring coupled to an upper end of the first auxiliary link member to prevent introversion and extroversion of a hip point from occurring when the rehabilitating person is walking; a foot support which comes into contact with the foot of the rehabilitating person; an ankle joint for connecting the foot support and the second auxiliary link member; and a second spring coupled to a side of the foot support to compensate an entropion angle.
Abstract:
Provided are a semiconductor memory device and a method of fabricating the same, the semiconductor memory device may include a semiconductor substrate with a first trench defining active regions in a first region and a second trench provided in a second region around the first region, a gate electrode provided on the first region to cross the active regions, a charge storing pattern disposed between the gate electrode and the active regions, a blocking insulating layer provided between the gate electrode and the charge storing pattern and extending over the first trench to define a first air gap in the first trench, and an insulating pattern provided spaced apart from a bottom surface of the second trench to define a second air gap in the second trench.
Abstract:
Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.
Abstract:
A system including an enclosure of a washing machine, a drum within the enclosure, a mixing unit, within the enclosure but separate from the drum and in fluid communication with the drum, a water supply unit coupled to the mixing unit, a reservoir having a conduit fluidly coupled to the mixing unit, and a container connecting assembly configured to fix a spout of a container to the reservoir. An apparatus including a reservoir, external to a washing machine, to receive a liquid wash aid, a container connecting assembly coupled to the reservoir and configured to fix a spout of a container containing liquid wash aid to the reservoir, a flexible conduit to pass liquid wash aid from the reservoir to the washing machine, and a wash aid control unit connected to the flexible conduit and adapted to meter a flow of liquid wash aid from the reservoir to the washing machine.
Abstract:
Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.