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公开(公告)号：US5575847A
公开(公告)日：1996-11-19
申请号：US337474
申请日：1994-11-08
申请人： Kaoru Kuramochi , Setsuo Okamoto
发明人： Kaoru Kuramochi , Setsuo Okamoto
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/203 , Y10T117/1032 , Y10T117/104 , Y10T117/1068
摘要： This invention relates to the apparatus and the process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The apparatus is provided with a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a cylindrical shaped heat resistant and heat insulating component below the protective gas inlet pipe noted above. In the process of producing single crystals, the single crystal is pulled up through the circular cylinder or a cylindrical shape heat resistant and heat insulating component below the protective gas inlet pipe, and while the palled-up crystal is at high temperature the temperature gradient in it is held small and when the crystal is cooled to low temperature the temperature gradient is increased.
摘要翻译： 本发明涉及通过在拉伸方向上调整硅单晶的温度梯度来生产具有很小的OSF生成和优异的栅氧化膜介电强度的单晶的装置和方法。 该装置设置有坩埚，其包含单晶材料的熔体，加热熔体的加热元件，用于生长单晶的牵引轴，保护气体入口管和包含所有上述组分的室。 此外，该设备在上述保护气体入口管下方设置有圆柱体或圆柱形的耐热和隔热部件。 在制造单晶的过程中，单晶通过圆柱体或保护气体入口管下方的圆柱形耐热和隔热组件被拉起，而缓冲晶体处于高温时，温度梯度 保持较小，当晶体冷却至低温时，温度梯度增加。
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公开(公告)号：US5551978A
公开(公告)日：1996-09-03
申请号：US421789
申请日：1995-04-14
申请人： Yoshihiro Akashi , Kaoru Takiuchi , Setsuo Okamoto
发明人： Yoshihiro Akashi , Kaoru Takiuchi , Setsuo Okamoto
CPC分类号： C30B15/14 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.
摘要翻译： 一种单晶体的制造装置，其特征在于，包括：加热器，其配置在坩埚的外周并沿着单晶的生长轴线移动。 加热器根据坩埚中的熔融液体层的表面位置沿单晶生长方向移动。 用于生产单晶的装置还包括用于调节晶种被拉动的速度的装置。 例如，根据加热器的位置来调整晶种的拉拔速度。
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公开(公告)号：US5435263A
公开(公告)日：1995-07-25
申请号：US216424
申请日：1994-03-23
申请人： Yoshihiro Akashi , Kaoru Takiuchi , Setsuo Okamoto
发明人： Yoshihiro Akashi , Kaoru Takiuchi , Setsuo Okamoto
CPC分类号： C30B15/14 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： An apparatus for producing a single crystal comprising a heater which is arranged on the outer periphery of a crucible and movable along the axis of growth of a single crystal. The heater is moved along the direction of growth of the single crystal in accordance with the surface position of the molten liquid layer in the crucible. The apparatus for producing a single crystal further comprising means for adjusting the speed at which the seed crystal is pulled. For example, the pulling speed of the seed crystal is adjusted in accordance with the position of the heater.
摘要翻译： 一种单晶体的制造装置，其特征在于，包括：加热器，其配置在坩埚的外周并沿着单晶的生长轴线移动。 加热器根据坩埚中的熔融液体层的表面位置沿单晶生长方向移动。 用于生产单晶的装置还包括用于调节晶种被拉动的速度的装置。 例如，根据加热器的位置来调整晶种的拉拔速度。
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公开(公告)号：US5611857A
公开(公告)日：1997-03-18
申请号：US474662
申请日：1995-06-07
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.
摘要翻译： 通过调节上拉硅单晶的温度梯度而不损失其拉伸速率，制造具有优异的栅极氧化膜介电强度的硅单晶的方法和装置。 通过从单晶的熔体中提取单晶来生产硅单晶的过程在生长的单晶仍处于高温时施加一定的平均温度梯度。 该设备在坩埚外部设置有加热元件和拉动轴，单晶从坩埚中的材料的熔体被拉出。 将加热元件的长度h与坩埚的内径phi的比率调整为0.2〜0.8，由此将温度梯度保持在2.5℃/ mm以下。
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公开(公告)号：US5952086A
公开(公告)日：1999-09-14
申请号：US737313
申请日：1996-11-12
IPC分类号： C22F1/18 , C23C14/34 , H01L21/203 , H01L21/28 , H01L21/285 , B32B3/00
CPC分类号： H01J37/3426 , C22F1/183 , C23C14/3414 , Y10T428/12806
摘要： A titanium target for sputtering high in film making efficiency in a contact hole. The crystallization on the target face is caused to be orientated so that the X-ray diffraction strength of the (10 -10) and/or (11 -20) vertical to the close-packed filling face may become 1.1 times or more in a case of the random orientation, and the X-ray diffraction strength of the (0002) parallel to the close-packed filling face may become 1 time or lower in a case of the random orientation. A direction of the sputter grains jumping out of the target face is controlled in a direction vertical to the target face.
摘要翻译： PCT No.PCT / JP96 / 00610 Sec。 371日期：1996年11月12日 102（e）日期1996年11月12日PCT 1996年3月12日PCT公布。 公开号WO96 / 28583 日期1996年9月19日一种用于在接触孔中溅射高成膜效率的钛靶。 导致目标面上的结晶取向，使得（10-10）和/或（11-20）垂直于紧密堆积的填充面的X射线衍射强度可以在 在随机取向的情况下，平行于紧密堆积填充面的（0002）的X射线衍射强度可以变为1倍以下。 从目标面跳出的溅射粒子的方向在垂直于目标面的方向上被控制。
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公开(公告)号：US5683505A
公开(公告)日：1997-11-04
申请号：US607401
申请日：1996-02-27
申请人： Kaoru Kuramochi , Setsuo Okamoto
发明人： Kaoru Kuramochi , Setsuo Okamoto
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1052 , Y10T117/1068
摘要： A process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The process is carried out with an apparatus including a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a conical shaped heat resistant and heat insulating component below the protective gas inlet pipe. In the process of producing single crystals, the single crystal is pulled up through the circular cylinder or conical shaped heat resistant and heat insulating component below the protective gas inlet pipe, and while the pulled-up crystal is at high temperature the temperature gradient is held small and when the crystal is cooled to low temperature the temperature gradient is increased.
摘要翻译： 通过在拉拔方向上调整硅单晶的温度梯度，生产具有很少的OSF生成和优异的栅极氧化膜介电强度的单晶的方法。 该方法使用包括含有单晶材料的熔融物的坩埚，加热熔体的加热元件，用于生长单晶的牵引轴，保护气体入口管和包含全部材料的室的装置进行 上述组件。 此外，该设备在保护气体入口管下方设置有圆柱体或圆锥形的耐热和隔热部件。 在制造单晶的过程中，单晶通过保护气体入口管下方的圆柱形或圆锥形的耐热和隔热组件被拉起，而上拉晶体处于高温下，温度梯度保持 当晶体冷却到低温时，温度梯度增加。
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公开(公告)号：US4225565A
公开(公告)日：1980-09-30
申请号：US6293
申请日：1979-01-25
CPC分类号： C22B7/04 , Y02P10/212
摘要： In the treating of waste slags produced in the desulfurization and/or dephosphorization of molten pig iron with alkali carbonates, the alkali is recovered by extracting said waste slags with hot water while feeding carbon dioxide gas to form an extraction solution having a pH of 9.0-11.5 and recovering alkali carbonates from said extraction solution. The extraction solution contains little sulphur and silicates, from which alkali carbonates can be easily recovered with high yield therefrom.
摘要翻译： 在用碱性碳酸盐脱硫和/或脱磷脱磷生产的废渣中处理废渣时，用热水提取所述废渣并回收二氧化碳，形成pH为9.0〜 11.5并从所述提取溶液中回收碱金属碳酸盐。 提取溶液含有少量的硫和硅酸盐，碱金属碳酸盐可以从其中高收率地容易地回收。
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公开(公告)号：US5477806A
公开(公告)日：1995-12-26
申请号：US210998
申请日：1994-03-21
IPC分类号： C30B15/00 , C30B15/02 , C30B29/06 , H01L21/208 , C30B15/20
摘要： A solid layer is melted from the upper part thereof by the heat of a heater while the contact area between a molten liquid layer and an inner wall of a crucible is adjusted in a Double Layered CZ method, so that the eluting amount of oxygen from the crucible to the molten liquid layer is controlled. Accordingly, silicon single crystals of the low concentration of oxygen are produced.
摘要翻译： 通过加热器的热量将固体层从其上部熔化，同时以双层CZ方法调节熔融液体层和坩埚内壁之间的接触面积，使得来自 对熔融液体层的坩埚进行控制。 因此，生成低浓度氧的硅单晶。
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公开(公告)号：US5474019A
公开(公告)日：1995-12-12
申请号：US322197
申请日：1994-10-13
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.
摘要翻译： 通过调节上拉硅单晶的温度梯度而不损失其拉伸速率，制造具有优异的栅极氧化膜介电强度的硅单晶的方法和装置。 通过从单晶的熔体中提取单晶来生产硅单晶的过程在生长的单晶仍处于高温时施加一定的平均温度梯度。 该设备在坩埚外部设置有加热元件和拉动轴，单晶从坩埚中的材料的熔体被拉出。 将加热元件的长度h与坩埚的内径phi的比率调整为0.2〜0.8，由此将温度梯度保持在2.5℃/ mm以下。
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