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公开(公告)号：US5575847A
公开(公告)日：1996-11-19
申请号：US337474
申请日：1994-11-08
申请人： Kaoru Kuramochi , Setsuo Okamoto
发明人： Kaoru Kuramochi , Setsuo Okamoto
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/203 , Y10T117/1032 , Y10T117/104 , Y10T117/1068
摘要： This invention relates to the apparatus and the process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The apparatus is provided with a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a cylindrical shaped heat resistant and heat insulating component below the protective gas inlet pipe noted above. In the process of producing single crystals, the single crystal is pulled up through the circular cylinder or a cylindrical shape heat resistant and heat insulating component below the protective gas inlet pipe, and while the palled-up crystal is at high temperature the temperature gradient in it is held small and when the crystal is cooled to low temperature the temperature gradient is increased.
摘要翻译： 本发明涉及通过在拉伸方向上调整硅单晶的温度梯度来生产具有很小的OSF生成和优异的栅氧化膜介电强度的单晶的装置和方法。 该装置设置有坩埚，其包含单晶材料的熔体，加热熔体的加热元件，用于生长单晶的牵引轴，保护气体入口管和包含所有上述组分的室。 此外，该设备在上述保护气体入口管下方设置有圆柱体或圆柱形的耐热和隔热部件。 在制造单晶的过程中，单晶通过圆柱体或保护气体入口管下方的圆柱形耐热和隔热组件被拉起，而缓冲晶体处于高温时，温度梯度 保持较小，当晶体冷却至低温时，温度梯度增加。
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公开(公告)号：US5611857A
公开(公告)日：1997-03-18
申请号：US474662
申请日：1995-06-07
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.
摘要翻译： 通过调节上拉硅单晶的温度梯度而不损失其拉伸速率，制造具有优异的栅极氧化膜介电强度的硅单晶的方法和装置。 通过从单晶的熔体中提取单晶来生产硅单晶的过程在生长的单晶仍处于高温时施加一定的平均温度梯度。 该设备在坩埚外部设置有加热元件和拉动轴，单晶从坩埚中的材料的熔体被拉出。 将加热元件的长度h与坩埚的内径phi的比率调整为0.2〜0.8，由此将温度梯度保持在2.5℃/ mm以下。
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公开(公告)号：US5477806A
公开(公告)日：1995-12-26
申请号：US210998
申请日：1994-03-21
IPC分类号： C30B15/00 , C30B15/02 , C30B29/06 , H01L21/208 , C30B15/20
摘要： A solid layer is melted from the upper part thereof by the heat of a heater while the contact area between a molten liquid layer and an inner wall of a crucible is adjusted in a Double Layered CZ method, so that the eluting amount of oxygen from the crucible to the molten liquid layer is controlled. Accordingly, silicon single crystals of the low concentration of oxygen are produced.
摘要翻译： 通过加热器的热量将固体层从其上部熔化，同时以双层CZ方法调节熔融液体层和坩埚内壁之间的接触面积，使得来自 对熔融液体层的坩埚进行控制。 因此，生成低浓度氧的硅单晶。
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公开(公告)号：US5474019A
公开(公告)日：1995-12-12
申请号：US322197
申请日：1994-10-13
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1032 , Y10T117/1068 , Y10T117/1088
摘要： A process and apparatus for producing silicon single crystals with excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the pulled-up silicon single crystal without loss of its rate of pulling. The process of producing silicon single crystals by pulling up the single crystal from a melt of material of the single crystal imposes a certain average temperature gradient on the grown single crystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and pulling shaft with which a single crystal is pulled up from the melt of the material in the crucible. The ratio of length h of the heating element to the inside diameter .phi. of the crucible is adjusted so as to be between 0.2 and 0.8 whereby the temperature gradient can be maintained below 2.5.degree. C./mm.
摘要翻译： 通过调节上拉硅单晶的温度梯度而不损失其拉伸速率，制造具有优异的栅极氧化膜介电强度的硅单晶的方法和装置。 通过从单晶的熔体中提取单晶来生产硅单晶的过程在生长的单晶仍处于高温时施加一定的平均温度梯度。 该设备在坩埚外部设置有加热元件和拉动轴，单晶从坩埚中的材料的熔体被拉出。 将加热元件的长度h与坩埚的内径phi的比率调整为0.2〜0.8，由此将温度梯度保持在2.5℃/ mm以下。
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公开(公告)号：US5683505A
公开(公告)日：1997-11-04
申请号：US607401
申请日：1996-02-27
申请人： Kaoru Kuramochi , Setsuo Okamoto
发明人： Kaoru Kuramochi , Setsuo Okamoto
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1052 , Y10T117/1068
摘要： A process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The process is carried out with an apparatus including a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a conical shaped heat resistant and heat insulating component below the protective gas inlet pipe. In the process of producing single crystals, the single crystal is pulled up through the circular cylinder or conical shaped heat resistant and heat insulating component below the protective gas inlet pipe, and while the pulled-up crystal is at high temperature the temperature gradient is held small and when the crystal is cooled to low temperature the temperature gradient is increased.
摘要翻译： 通过在拉拔方向上调整硅单晶的温度梯度，生产具有很少的OSF生成和优异的栅极氧化膜介电强度的单晶的方法。 该方法使用包括含有单晶材料的熔融物的坩埚，加热熔体的加热元件，用于生长单晶的牵引轴，保护气体入口管和包含全部材料的室的装置进行 上述组件。 此外，该设备在保护气体入口管下方设置有圆柱体或圆锥形的耐热和隔热部件。 在制造单晶的过程中，单晶通过保护气体入口管下方的圆柱形或圆锥形的耐热和隔热组件被拉起，而上拉晶体处于高温下，温度梯度保持 当晶体冷却到低温时，温度梯度增加。
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公开(公告)号：US5260037A
公开(公告)日：1993-11-09
申请号：US903950
申请日：1992-06-26
申请人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
发明人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
CPC分类号： C30B29/06 , C30B15/14 , C30B15/305 , Y10S117/90 , Y10S117/917 , Y10T117/1068
摘要： An apparatus and a method for producing a silicon single crystal by Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.
摘要翻译： 一种通过Czochralski法制造单晶硅的装置和方法，其中，通过在坩埚的外周边的侧面加热器将坩埚加热坩埚时，将硅单晶从坩埚中拉出，并且将底部加热器面向底部加热器 坩埚。 侧加热器和底部加热器的输出彼此独立地控制，使得上拉硅单晶的上拉方向上的氧浓度均匀。 除了加热器的输出控制之外，对坩埚中的熔融液体施加磁场，使得上拉硅单晶的半径方向的掺杂剂浓度变得均匀。
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公开(公告)号：US5152867A
公开(公告)日：1992-10-06
申请号：US554552
申请日：1990-07-19
申请人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
发明人： Kiichiro Kitaura , Makoto Ito , Kaoru Kuramochi
CPC分类号： C30B29/06 , C30B15/14 , C30B15/305 , Y10T117/1068
摘要： An apparatus and a method for producing a silicon single crystal by the Czochralski method, whereby the silicon single crystal is pulled up from a crucible while the crucible is heated by a side heater in the lateral periphery of the crucible and a bottom heater facing the bottom of the crucible. The outputs of the side heater and bottom heater are controlled independently of each other so that an oxygen concentration in the pull-up direction of the pulled-up silicon single crystal is rendered uniform. In addition to the output control of the heaters, a magnetic field is applied to a molten liquid in the crucible, so that, a dopant concentration in a radial direction of the pulled-up silicon single crystal is rendered uniform.
摘要翻译： 一种通过切克劳斯基法（Czochralski method）制造单晶硅的装置和方法，其中，通过在坩埚的外周边的侧面加热器将坩埚加热，并且底部加热器面向底部，从坩埚中拉出硅单晶 的坩埚。 侧加热器和底部加热器的输出彼此独立地控制，使得上拉硅单晶的上拉方向上的氧浓度均匀。 除了加热器的输出控制之外，对坩埚中的熔融液体施加磁场，使得上拉硅单晶的半径方向的掺杂剂浓度变得均匀。
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公开(公告)号：US5471949A
公开(公告)日：1995-12-05
申请号：US330785
申请日：1994-10-28
申请人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
发明人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
IPC分类号： C30B15/22 , C30B15/00 , C30B15/12 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/12 , Y10T117/1032 , Y10T117/1052
摘要： A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
摘要翻译： 一种制造硅单晶的方法，其中将圆柱形分隔件浸入熔融的纯硅液体或坩埚内含有Sb掺杂剂的熔融硅液体，并且将分隔壁内的熔融液体从坩埚中拉出以产生硅 单晶，其中改变分隔件的下端和坩埚底部之间的间隔，以控制提拉硅单晶中的氧浓度。 在氧浓度降低的情况下，在提高硅单晶中的氧浓度增加的同时间隔增加的情况下，间隔减小。
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公开(公告)号：US5392729A
公开(公告)日：1995-02-28
申请号：US588171
申请日：1990-09-26
申请人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
发明人： Kaoru Kuramochi , Makoto Ito , Kiichiro Kitaura
IPC分类号： C30B15/22 , C30B15/00 , C30B15/12 , H01L21/208 , C30B15/30
CPC分类号： C30B29/06 , C30B15/12 , Y10T117/1032 , Y10T117/1052
摘要： A method of producing a silicon single crystal, in which a cylindrical partition is immersed in a molten pure silicon liquid or molten silicon liquid containing a Sb dopant within a crucible and the molten liquid inside the partition is pulled up from the crucible to produce the silicon single crystal, wherein an interval between a lower end of the partition and a crucible bottom is changed to control an oxygen concentration in the pulling-up silicon single crystal. The interval is reduced in the case where the oxygen concentration in the pulling-up silicon single crystal is to be increased while the interval is increased in the case where the oxygen concentration is to be reduced.
摘要翻译： 一种制造硅单晶的方法，其中将圆柱形分隔件浸入熔融的纯硅液体或坩埚内含有Sb掺杂剂的熔融硅液体，并且将分隔壁内的熔融液体从坩埚中拉出以产生硅 单晶，其中改变分隔件的下端和坩埚底部之间的间隔，以控制提拉硅单晶中的氧浓度。 在氧浓度降低的情况下，在提高硅单晶中的氧浓度增加的同时间隔增加的情况下，间隔减小。
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