公开(公告)号：US07588976B2

公开(公告)日：2009-09-15

申请号：US12151474

申请日：2008-05-07

Applicant: Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

Inventor： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC: H01L21/336

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

公开(公告)号：US20140101224A1

公开(公告)日：2014-04-10

申请号：US14122220

申请日：2012-05-09

Applicant: Shingo Makimura ,  Takeshi Watanabe ,  Tomoki Murakami ,  Atsushi Hashiguchi

Inventor： Shingo Makimura ,  Takeshi Watanabe ,  Tomoki Murakami ,  Atsushi Hashiguchi

IPC: H04L29/08

CPC classification number: H04L67/10 ,  H04L65/1046 ,  H04L65/105 ,  H04L65/1069

Abstract: A communication control device 100 initiates a session with a communication device by executing a sequence including a plurality of communication events. The communication control device includes: a scenario information accepting part 101 for accepting scenario information including sequence execution instruction information associated with a communication event, the sequence execution instruction information instructing to newly execute a sequence, and the sequence execution instruction information including synchronization information representing whether to synchronize a first sequence that is the newly executed sequence and a second sequence that is another sequence; and a scenario executing part 102 for, when the communication event associated with the sequence execution instruction information included by the accepted scenario information is executed while a certain sequence is being executed, newly executing a sequence based on the synchronization information included by the sequence execution instruction information.

Abstract translation: 通信控制装置100通过执行包括多个通信事件的序列来发起与通信装置的会话。 通信控制装置包括：脚本信息接受部101，用于接受包括与通信事件相关联的序列执行指示信息的场景信息，指示重新执行序列的序列执行指示信息，以及包括表示是否同步信息的序列执行指示信息 使作为新执行的序列的第一序列和作为另一序列的第二序列同步; 以及场景执行部102，用于当在执行某个序列的同时执行与所接受的场景信息所包括的序列执行指令信息相关联的通信事件时，基于由序列执行指令包含的同步信息重新执行序列 信息。

公开(公告)号：US20080286914A1

公开(公告)日：2008-11-20

申请号：US12151474

申请日：2008-05-07

Applicant: Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

Inventor： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC: H01L21/336

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

Abstract translation: 能够提高像素晶体管的耐光性而不依赖于遮光结构的显示装置及其制造方法，其中形成像素晶体管的有源层的多晶硅膜111的平均晶粒尺寸被控制为 相对较小，以便抑制光漏电流。 晶粒尺寸越小，晶体缺陷就越大。 通过光照射而激发的载体被缺陷水平平滑地捕获，并且抑制了光泄漏电流的增加。 另一方面，构成外围晶体管的多晶硅膜111的平均晶粒尺寸被控制成变得相对较大。 晶粒尺寸越大，载流子的迁移率越大，外围晶体管的驱动性越高。 这是因为由于像素的扫描和图像信号的采样，外围晶体管需要比像素晶体管更高的速度操作。

公开(公告)号：US07407840B2

公开(公告)日：2008-08-05

申请号：US11207347

申请日：2005-08-19

Applicant: Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

Inventor： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC: H01L21/00

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

公开(公告)号：US07189993B2

公开(公告)日：2007-03-13

申请号：US10485790

申请日：2003-06-06

Applicant: Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

Inventor： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC: H01L31/00

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

Abstract translation: 能够提高像素晶体管的耐光性而不依赖于遮光结构的显示装置及其制造方法，其中形成像素晶体管的有源层的多晶硅膜111的平均晶粒尺寸被控制为 相对较小，以便抑制光漏电流。 晶粒尺寸越小，晶体缺陷就越大。 通过光照射而激发的载体被缺陷水平平滑地捕获，并且抑制了光泄漏电流的增加。 另一方面，构成外围晶体管的多晶硅膜111的平均晶粒尺寸被控制成变得相对较大。 晶粒尺寸越大，载流子的迁移率越大，外围晶体管的驱动性越高。 这是因为由像素的扫描和图像信号的采样所造成的外围晶体管比像素晶体管要高。

公开(公告)号：US5708485A

公开(公告)日：1998-01-13

申请号：US617299

申请日：1996-03-18

Applicant: Takusei Sato ,  Yoshihiro Hashimoto ,  Kazuyoshi Yoshida ,  Shingo Makimura ,  Makoto Takatoku

Inventor： Takusei Sato ,  Yoshihiro Hashimoto ,  Kazuyoshi Yoshida ,  Shingo Makimura ,  Makoto Takatoku

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1333

CPC classification number: G02F1/136209

Abstract: To give an electric shield function and an electric contact function to a light shielding film formed on a drive substrate. An active matrix display device includes a drive substrate 1 having pixels 4, an opposed substrate 2 having an opposed electrode 5, and a liquid crystal 3 held in a space defined between the drive substrate 1 and the opposed substrate 2. An upper layer portion of the drive substrate 1 includes pixel electrodes 6 formed individually for the pixels 4. A lower layer portion of the drive substrate 1 includes thin-film transistors 7 for individually driving the pixel electrodes 6, scanning lines 8, and signal lines 9. A light shielding film having conductivity is interposed between the upper layer portion and the lower layer portion, and is divided into mask shielding films 16M and pad shielding films 16P. Each mask shielding film 16M is continuously patterned along each row of the pixels 4 to partially shield at least the corresponding thin-film transistor 7. Each mask shielding film 16M is insulated from both the upper layer portion and the lower layer portion, and is maintained at a fixed potential. The pad shielding films 16P are discretely patterned for the individual pixels 4, and each pad shielding film 16P is located at a contact portion C between the corresponding pixel electrode 6 and the corresponding thin-film transistor 7 to provide electrical connection therebetween and light shielding.

Abstract translation: 为了对形成在驱动基板上的遮光膜赋予电屏蔽功能和电接触功能。 有源矩阵显示装置包括具有像素4的驱动基板1，具有相对电极5的相对基板2和保持在驱动基板1和相对基板2之间的空间中的液晶3。 驱动基板1包括为像素4分别形成的像素电极6.驱动基板1的下层部分包括用于单独驱动像素电极6，扫描线8和信号线9的薄膜晶体管7.遮光 具有导电性的膜插入在上层部分和下层部分之间，并被分成掩模屏蔽膜16M和焊盘屏蔽膜16P。 每个掩模屏蔽膜16M沿着像素4的每一行连续地图案化，以至少部分地屏蔽相应的薄膜晶体管7.每个掩模屏蔽膜16M与上层部分和下层部分都被绝缘，并被保持 处于固定的潜力。 衬垫屏蔽膜16P对于各个像素4离散地图案化，并且每个衬垫屏蔽膜16P位于相应的像素电极6和相应的薄膜晶体管7之间的接触部分C处，以提供其间的电连接和遮光。

公开(公告)号：US20060033103A1

公开(公告)日：2006-02-16

申请号：US11251430

申请日：2005-10-14

Applicant: Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

Inventor： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC: H01L29/04

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

公开(公告)号：US20060001024A1

公开(公告)日：2006-01-05

申请号：US11207347

申请日：2005-08-19

Applicant: Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

Inventor： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC: H01L29/04

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

公开(公告)号：US07521711B2

公开(公告)日：2009-04-21

申请号：US11251430

申请日：2005-10-14

Applicant: Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

Inventor： Shingo Makimura ,  Makoto Hashimoto ,  Yoshiro Okawa ,  Tomohiro Wada ,  Kazunori Kataoka

IPC: H01L29/04

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78675

Abstract: A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

Abstract translation: 能够提高像素晶体管的耐光性而不依赖于遮光结构的显示装置及其制造方法，其中形成像素晶体管的有源层的多晶硅膜111的平均晶粒尺寸被控制为 相对较小，以便抑制光漏电流。 晶粒尺寸越小，晶体缺陷就越大。 通过光照射而激发的载体被缺陷水平平滑地捕获，并且抑制了光泄漏电流的增加。 另一方面，构成外围晶体管的多晶硅膜111的平均晶粒尺寸被控制成变得相对较大。 晶粒尺寸越大，载流子的迁移率越大，外围晶体管的驱动性越高。 这是因为由于像素的扫描和图像信号的采样，外围晶体管需要比像素晶体管更高的速度操作。