公开(公告)号：US6030595A

公开(公告)日：2000-02-29

申请号：US684725

申请日：1996-07-22

申请人： Hitoshi Sumiya ,  Shuichi Satoh ,  Yoshiki Nishibayashi

发明人： Hitoshi Sumiya ,  Shuichi Satoh ,  Yoshiki Nishibayashi

IPC分类号： B01J3/06 ,  C01B31/06 ,  C01B33/06

CPC分类号： B01J3/062 ,  C01B31/06 ,  C01B33/06 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

摘要： A high purity synthetic diamond with less impurities, crystals defects, strains, etc. can be provided, in which the nitrogen content is at most 10 ppm, preferably at most 0.1 ppm and the boron content is at most 1 ppm, preferably at most 0.1 ppm or in which nitrogen atoms and boron atoms are contained in the crystal and the difference between the number of the nitrogen atoms and that of the boron atoms is at most 1.times.10.sup.17 atoms/cm.sup.3. The strain-free synthetic diamond can be produced by a process for the production of a strain-free synthetic diamond by the temperature gradient method, which comprises using a carbon source having a boron content of at most 10 ppm and a solvent metal having a boron content of at most 1 ppm and adding a nitrogen getter to the solvent metal, thereby synthesizing the diamond.

摘要翻译： 可以提供具有较少杂质，晶体缺陷，应变等的高纯度合成金刚石，其中氮含量为至多10ppm，优选至多0.1ppm，硼含量为至多1ppm，优选至多0.1 ppm或其中氮原子和硼原子包含在晶体中，并且氮原子数与硼原子数之间的差异至多为1×10 17 atoms / cm 3。 无菌合成金刚石可以通过温度梯度法生产无应变合成金刚石的方法制备，该方法包括使用硼含量至多为10ppm的碳源和具有硼的溶剂金属 含量至多1ppm，并向溶剂金属中加入氮气吸收剂，从而合成金刚石。

公开(公告)号：US20060177962A1

公开(公告)日：2006-08-10

申请号：US10541184

申请日：2003-12-22

申请人： Akihiko Namba ,  Yoshiyuki Yamamoto ,  Hitoshi Sumiya ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Namba ,  Yoshiyuki Yamamoto ,  Hitoshi Sumiya ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01L21/00

CPC分类号： H01L21/0415 ,  C30B29/04 ,  H01L21/265 ,  H01L29/167

摘要： A method of manufacturing n-type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained in, single-crystal diamond incorporating 10 ppm or more N, or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealing the diamond in a temperature range of from 800° C. or more to less than 1800° C. to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n-type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 107 Ω/□ or less.

摘要翻译： 通过本发明制造n型半导体金刚石的方法的特征在于通过将Li离子注入到Li中并掺入N的金刚石，使得其中含有10ppm将包含在包含10ppm或更多N的单晶金刚石中，或 否则，通过注入离子来掺杂具有Li和N离子的单晶金刚石，使得注入后的Li和N浓度各自为10ppm以上的离子注入深度将重叠，然后在金刚石中退火 温度范围为800℃以上至小于1800℃，以电激活Li和N并恢复金刚石晶体结构。 在本发明中，n型半导体金刚石从晶体表面到相同的深度掺入了Li和N的10ppm以上，其中薄膜电阻为10Ω/ □以下

公开(公告)号：US5908503A

公开(公告)日：1999-06-01

申请号：US567428

申请日：1995-12-05

申请人： Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

发明人： Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

IPC分类号： B01J3/06 ,  C30B11/00 ,  C30B29/04

CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068

摘要： A colorless, transparent low defect density, synthetic type IIa diamond single crystal, in which the etch pits due to needle-shaped defects are at most 3.times.10.sup.5 pieces/cm.sup.2, and which can be applied to uses needing high crystallinity of diamond, for example, monochromators, semiconductor substrates, spectroscopic crystals in X-ray range, electronic materials, etc., is provided by a process for the production of the colorless, transparent low defect density, synthetic diamond single crystal by growing new diamond crystal on a seed crystal of diamond by the temperature gradient method which comprises using a crystal defect-free diamond single crystal, as a seed crystal of diamond, and optionally subjecting to a heat treatment in a non-oxidizing atmosphere at a low pressure and a temperature of 1100 to 1600.degree. C.

摘要翻译： 无色，透明的低缺陷密度的合成IIa型金刚石单晶，其中由于针状缺陷引起的蚀刻坑最多为3×10 5个/ cm 2，并且其可以应用于需要高结晶度的金刚石，例如， 单色仪，半导体衬底，X射线范围内的分光晶体，电子材料等，通过生产无色透明低缺陷密度合成金刚石单晶的方法提供，通过在晶种上生长新的金刚石晶体 金刚石，其包括使用无晶体缺陷金刚石单晶作为金刚石的晶种，并且可选地在低压和1100至1600℃的非氧化性气氛中进行热处理。 C。

公开(公告)号：US6129900A

公开(公告)日：2000-10-10

申请号：US307493

申请日：1994-09-16

申请人： Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

发明人： Shuichi Satoh ,  Hitoshi Sumiya ,  Kazuwo Tsuji ,  Yasushi Gouda

IPC分类号： B01J3/06

CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/067 ,  B01J2203/068

摘要： A colorless and transparent, substantially inclusion-free diamond crystal which can be applied to decorative uses and optical parts is synthesized by a process using a temperature gradient method in an ultra-high pressure apparatus. This process comprises using, as a solvent for the growth of the crystal, at least one metal selected from the group consisting of Fe, Co, Ni, Mn and Cr (at least two metals in the case of containing Fe) and as a nitrogen getter for the removal of nitrogen in the solvent, at least one metal selected from the group consisting of Al, Ti, Zr, Hf, V, Nb and Ta in a proportion of 0.5 to 7% by weight (at most 2% by weight when using only Al) to the solvent metal.

摘要翻译： PCT No.PCT / JP92 / 00149 Sec。 371日期：1992年10月14日 102（e）日期1992年10月14日PCT提交1992年2月14日PCT公布。 公开号WO92 / 14542 日期1992年9月3日可以应用于装饰用途和光学部件的无色透明的基本上不含夹杂的金刚石晶体通过在超高压装置中使用温度梯度法的方法合成。 该方法包括使用选自Fe，Co，Ni，Mn和Cr中的至少一种金属作为晶体生长的溶剂（在含有Fe的情况下至少有两种金属）和作为氮 吸附剂用于除去溶剂中的氮，至少一种选自Al，Ti，Zr，Hf，V，Nb和Ta的金属，其含量为0.5〜7重量％（最多2重量％ 当仅使用Al时）溶剂金属。

公开(公告)号：US5912217A

公开(公告)日：1999-06-15

申请号：US529158

申请日：1995-09-15

申请人： Hitoshi Sumiya ,  Shuichi Satoh ,  Takeru Nakashima ,  Yasuyuki Kanada

发明人： Hitoshi Sumiya ,  Shuichi Satoh ,  Takeru Nakashima ,  Yasuyuki Kanada

IPC分类号： B01J3/06 ,  B24D3/06 ,  B24D3/14 ,  B24D3/02

CPC分类号： C04B35/52 ,  B01J3/062 ,  B24D3/06 ,  B24D3/14 ,  C04B35/6303 ,  C04B35/6306 ,  C04B35/6309 ,  C04B35/6313 ,  C04B35/645 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  C04B2235/3201 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3239 ,  C04B2235/3262 ,  C04B2235/327 ,  C04B2235/3272 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/40 ,  C04B2235/402 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/442 ,  C04B2235/446 ,  C04B2235/447 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/721 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9692

摘要： An improved diamond sintered body having an excellent breakage resistance, corrosion resistance, heat resistance and wear resistance and capable of being sintered at a relatively low pressure and low temperature can be provided. The feature thereof consists in a diamond sintered body comprising 50 to 99.9 volume % of diamond and the balance of a binder phase consisting of a single or mixed phase of a compound (C) or composite (C') of at least one element (A) selected from the group consisting of rare earth elements, Group 3B, 4A, 4B and 6B elements of Periodic Table, iron group, Mn, V, alkali metals and alkaline earth metals with a phosphorus compound (B), or of the above described compound (C) or composite (C') with an oxide of (A).

摘要翻译： 可以提供具有优异的耐破坏性，耐腐蚀性，耐热性和耐磨性并且能够在相对低的低温和低温下烧结的改进的金刚石烧结体。 其特征在于金刚石烧结体包含50至99.9体积％的金刚石，余量为由单一或混合相（至少一种元素（A）的化合物（C））或复合材料（C'）组成的粘结相 ）选自周期表中的稀土元素，第3B，4A，4B和6B族元素，铁基，Mn，V，碱金属和碱土金属与磷化合物（B）或上述 化合物（C）或复合物（C'）与（A）的氧化物反应。

公开(公告)号：US5769176A

公开(公告)日：1998-06-23

申请号：US675932

申请日：1996-07-05

申请人： Hitoshi Sumiya ,  Shuichi Satoh

发明人： Hitoshi Sumiya ,  Shuichi Satoh

IPC分类号： B01J3/06 ,  B22F7/06

CPC分类号： B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  Y10T428/12146

摘要： The present invention provides a diamond sintered compact having a higher strength as well as more excellent heat resistance, breakage resistance and corrosion resistance, as compared with those of the prior art, which thus can effectively be applied to tool materials for cutting or polishing of non-ferrous metals or ceramics, and edge materials of drill bits for excavating petroleum. The feature of the diamond sintered compact contains 0.1 to 30 volume % of at least one compound containing at least one element selected from the group consisting of silicon and titanium, and oxygen and the balance of diamond, for example, a titanate of a metal selected from the group consisting of iron, cobalt, nickel and manganese.

摘要翻译： 本发明提供了与现有技术相比具有更高强度以及更优异的耐热性，耐破坏性和耐腐蚀性的金刚石烧结体，因此可有效地应用于用于切割或抛光非工具材料的工具材料 有色金属或陶瓷，以及用于挖掘石油的钻头的边缘材料。 金刚石烧结体的特征在于，含有0.1〜30体积％的至少一种含有选自硅和钛中的至少一种元素的化合物，氧和金刚石余量例如选自金属的钛酸盐 由铁，钴，镍和锰组成的组。

公开(公告)号：US09725826B2

公开(公告)日：2017-08-08

申请号：US14241855

申请日：2012-08-30

申请人： Kazuhiro Ikeda ,  Hitoshi Sumiya

发明人： Kazuhiro Ikeda ,  Hitoshi Sumiya

IPC分类号： C30B29/04 ,  C30B25/00 ,  B01J3/06 ,  C30B7/10

CPC分类号： C30B29/04 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  C30B7/10 ,  C30B25/00

摘要： Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12C is not lower than 99.9 mass % is subjected to denitrification.

公开(公告)号：US20140026492A1

公开(公告)日：2014-01-30

申请号：US14111289

申请日：2012-04-10

申请人： Natsuo Tatsumi ,  Katsuko Yamamoto ,  Hitoshi Sumiya

发明人： Natsuo Tatsumi ,  Katsuko Yamamoto ,  Hitoshi Sumiya

IPC分类号： B23B27/20

CPC分类号： B23B27/20 ,  B23B27/141 ,  B23B2226/125 ,  B82Y30/00 ,  C04B35/52 ,  C04B35/5831 ,  C04B35/645 ,  C04B2235/421 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6567 ,  C04B2235/666 ,  C04B2235/781 ,  C04B2235/782 ,  C04B2235/785 ,  C04B2235/81 ,  C04B2235/87 ,  Y10T407/26 ,  Y10T407/27

摘要： The present invention provides a cutting tool that achieves cutting with high precision. The cutting tool of the present invention includes a cutting edge composed of a polycrystalline body including high-pressure-phase hard grains that contain one or more elements selected from the group consisting of boron, carbon, and nitrogen, the polycrystalline body being formed by subjecting a non-diamond carbon material and/or boron nitride, serving as a starting material, to direct conversion sintering under ultra-high pressure and high temperature without adding a sintering aid or a catalyst, in which letting the radius of curvature of the nose of the cutting edge of the cutting tool be R1, the sintered grains constituting the polycrystalline body have an average grain size of 1.2×R1 or less and a maximum grain size of 2×R1 or less.

摘要翻译： 本发明提供一种以高精度实现切割的切削工具。 本发明的切削工具包括由包含高压相硬质粒子的多晶体构成的切削刃，所述高压相硬质粒子含有选自硼，碳和氮的一种以上的元素，所述多晶体通过 作为起始原料的非金刚石碳材料和/或氮化硼，在超高压和高温下直接转化烧结，而不添加烧结助剂或催化剂，其中使得鼻子的曲率半径 切削刀具的切削刃为R1，构成多晶体的烧结晶粒的平均粒径为1.2×R1以下，最大粒径为2×R1以下。

公开(公告)号：US08226922B2

公开(公告)日：2012-07-24

申请号：US10582330

申请日：2004-12-03

申请人： Hitoshi Sumiya

发明人： Hitoshi Sumiya

IPC分类号： C01B35/00 ,  B01J3/06

CPC分类号： B01J3/062 ,  B01J2203/0655 ,  B82Y30/00 ,  C01B32/25 ,  C04B35/52 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/421 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/96

摘要： A diamond sintered body conventionally used in a cutting tool or the like includes an iron group metal element as a sintering aid, and therefore has a problem in heat resistance. A diamond sintered body not including the iron group metal, on the other hand, does not have sufficient mechanical strength to be used as a tool material, and also does not have conductivity, which makes electrical discharge machining impossible, and thus processing thereof is difficult. A diamond polycrystalline body having high heat resistance and mechanical strength and having conductivity enabling electrical discharge machining is obtained by using only an amorphous or fine graphite-type carbon material as a starting material, adding boron thereto and concurrently performing conversion into diamond and sintering in an ultra-high pressure and temperature condition.

摘要翻译： 通常用于切削工具等的金刚石烧结体包括作为烧结助剂的铁族金属元素，因此具有耐热性问题。 另一方面，不包含铁族金属的金刚石烧结体不具有足够的机械强度用作工具材料，也不具有导电性，这使得不能进行放电加工，因此其处理困难 。 通过仅使用无定形或细石墨型碳材料作为起始材料，可以获得具有高耐热性和机械强度并且具有导电性的金刚石多晶体，其中加入硼并同时进行金刚石的转化和烧结 超高压和温度条件。

公开(公告)号：US6071841A

公开(公告)日：2000-06-06

申请号：US979988

申请日：1997-11-26

申请人： Hitoshi Sumiya

发明人： Hitoshi Sumiya

IPC分类号： C04B35/583 ,  C04B35/5831 ,  C01B21/064 ,  C04B35/58

CPC分类号： C04B35/5831 ,  C01B21/0645 ,  C04B35/645 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/62 ,  C04B2235/3895 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/785 ,  C04B2235/87 ,  C04B2235/96 ,  C04B2235/9607

摘要： A cubic boron nitride sintered body has sufficient strength, hardness, heat resistance and heat dissipativity for serving as a cutting tool. A method of preparing a cubic boron nitride sintered body involves preparing a low-pressure phase boron nitride as a starting material by reducing a compound containing boron and oxygen with a compound containing nitrogen and carbon. Then, the low-pressure phase boron nitride starting material is directly converted to a cubic boron nitride sintered body by subjecting the starting material to a high temperature and a high pressure. In the obtained cubic boron nitride sintered body, the ratio I.sub.220 /I.sub.111 of X-ray diffraction intensity I.sub.220 on the (220) plane relative to X-ray diffraction intensity I.sub.111 on the (111) plane is at least 0.1.

摘要翻译： 立方氮化硼烧结体作为切削工具具有足够的强度，硬度，耐热性和散热性。 制备立方氮化硼烧结体的方法包括通过用含有氮和碳的化合物还原含有硼和氧的化合物来制备低压相氮化硼作为原料。 然后，通过使原料经受高温高压，将低压相氮化硼原料直接转化为立方氮化硼烧结体。 在获得的立方氮化硼烧结体中，（220）面上的X射线衍射强度I220相对于（111）面上的X射线衍射强度I111的比I220 / I111为0.1以上。